• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.421-424
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• 2004

In this study, in order to develop low temperature sintering ceramics for ultrasonic vibrator, PNW-PMN-PZT system ceramics were manufactured with the amount of $CaCO_3$ addition and their piezoelectric, dielectric and microstructural characteristics were investigated. $CaCO_3$ addition to PNW-PMN-PZT basic composition was proved to be capable of sintering the ceramics at temperature below $1000^{\circ}C$ due to the effect of $Li_2CO_3-CaCO_3$ liquid phase. However, with increasing the amount of $CaCO_3$ addition, the second phase was appeared. As the results, electromechanical coupling coefficient (kp) and dielectric constant $(\epsilon_r)$ decreased. Taking into consideration electromechanical coupling coefficient (kp) of 0.49, mechanical quality factor (Qm) of 1396, dielectric constant $(\epsilon_r)$ of 1300 and density of $7.78[g/cm^2]$, it was concluded that the 0.25wt% $CaCO_3$ addition composition ceramics sintered at $920^{\circ}C$ was suitable for ultrasonic vibrator application.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.88.1-88.1
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• 2015

In recent printed electronics technology, Photo-Sintering, a technique for sintering materials using a light source, has attracted attention as an alternative to time-consuming high-temperature thermal processes. The key principle of this technique is the selective heating of a strongly absorbent thin film, while preventing the heating of the transparent substrate by the light source. Many recent studies have used a flash lamp as the light source, and investigated the material-dependent effect of the width or intensity of the pulsed light. However, the flash lamp for sintering is not suitable for industry yet, because of needing too high power to sinter for a large scale. In energy-saving and large-scale sintering, LED technologies would be very useful in the near future. In this work, we investigated a sintering process for silver nanoparticles using UV-LED array. Silver nanoparticles in ink were inkjet-printed on a $1{\times}1cm$ area of a PET film and photo-sintered by 365 nm UV-LED module. A sheet resistance value as low as $72.6m{\Omega}/sq$ (2.3 - 4.5 times that of bulk silver) was obtained from the UV-LED sintering at 300 mW/cm2 for 50 min.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.659-664
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• 1998

Densification behavior of $Si_3N_4$ ceramics by two step gas pressure sintering was compared with pres-sureless sintering one step gas pressure sintering or hot isostatic pressing. While it was difficult to get the highly interlocked ${\beta}-Si_3N_4$ microstructure during the pressureless sintering due to decomposition above $1800^{\circ}C$ gas pressure sintering could solve this problem by increasing the densification temperature 2MPa of nitrogen pressure was enough to inhibit the decomposition up to $1890^{\circ}C$ and especially two step gas pres-sure sintering applying comparatively low pressure(2MPa) until the closed pore stage and then high pres-sure(10MPa) after pore closure could increase the hardness and the toughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.963-967
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• 2001

The effects of the sintering additives such as Bi$_2$O$_3$and V$_2$O$_{5}$ on the microwave dielectric and sintering properties of ZnTiO$_3$system were investigated. Densities of >97% of the theoretical densities have been attained for ZnTiO$_3$at the sintering temperature range of 870~90$0^{\circ}C$ with Bi$_2$O$_3$and V$_2$O$_{5}$ additions of $_3$were obtained with 0.6wt% Bi$_2$O$_3$and 0.5wt% V$_2$O$_{5}$; Qxf$_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -43 PPm/$^{\circ}C$. In order to improve temperature coefficient of resonance frequency, TiO$_2$was added to the above system. The optimum amount of TiO$_2$was 15mo1% when sintered at 87$0^{\circ}C$, at which we could obtain following results ; Qxf$_{o}$ = 44,700 GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.>.EX>.>.>.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.561-565
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• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1200-1204
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• 2003

In this study, in order to develop the low temperature sintering ceramics for multi-layer piezoelectric transformer, PSN-PZT system ceramics were manufactured as a function of CuO addition and their dielectric and piezoelectric characteristics were Investigated. CuO addition facilitated densification at low temperature due to the effect of Cu$_2$O-PbO liquid phase. Through the X-ray diffraction pattern study, absence of second phase unwanted was confirmed. Among the specimen to which CuO was added, the 0.6wt% CuO added specimen sintered at 900$^{\circ}C$ and 920$^{\circ}C$ showed the most excellent mechanical quality factor and electromechanical coupling factor, respectively. Besides the densification accelerator, CuO acted as a accepter and increased mechanical quality. Compared with the specimen with no addition sintered at 1150$^{\circ}C$ , the 0.6wt% CuO added specimen sintered at 920$^{\circ}C$ showed the appropriate dielectric and piezoelectric characteristics for multi-layer piezoelectric transformer.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.827-835
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• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.207-218
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• 1995

Tungsten(W) metal has excellent properties in heat-resistance, corrison-resistance and impact-resistance but W-Metal is hard to sinter because higher than $2,000^{\circ}C$ is required to sinter W-powder. Con-sequently, a deposit technique of Nikel Phosphorus(NiP) on W-powber by the liquid reduction precipitation method was performed. Sintering temperature of the resulting W-NiP composite was lowered around to $1,000^{\circ}C$, and the mechanical properties of the sintered body was studied. The most suitable conditions for NiP thin film deposit on W-Powder by the liquid reduction precipitation method, which are composition, concentration, pH and temperature of the liquid reduction solution, were considered. The activated sintering was carried out in a reducing condition furnace. Components and properties of the sintered body were investigated by the density and the hardness measurements, X- ray diffraction analysis, and microscopic photographs of the surface. Quantity of NiP thin film on W-powder could be varied by the change of the liquid reduction solution composition. The sintering temperature of W-NiP composite powder is lowered to $950^{\circ}C$ from $2,000^{\circ}C$ and the hardness is increased (ca. 720 Hv). Large shrinkage could be observed since density was increased from 5.5 to 11.0 g/$cm^2$ which 86.2% of theoretical density. W metal and $Ni_3P$ crystal were detected through X-ray diffraction on the sintered body. Perfectly activated sintering was observed by microscopic photographs.