• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.491-492
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• 2008

The effect of B on the hot ductility of Fe-29Ni-17Co Kovar alloy and the mechanism of high temperature deformation behavior were investigated. Hot-tensile test was carried out at the temperature range of $900^{\circ}C-1200^{\circ}C$. Optical microscopy and scanning electron microscopy were used to investigate the microstructure and fracture during hot deformation. The hot ductility of Kovar alloy was drastically increased with the addition of Boron. The improvement of hot ductility results from the grain boundary migration mainly due to the dynamic recrystallization at lower temperature range($900^{\circ}C$).

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.395-400
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• 2014

We proposed a method for fast turn-off switching of a vertically-aligned liquid crystal cell by low-temperature curing of the polymer structure. We confirmed that the turn-off times of the fabricated cells were reduced significantly as the curing temperature was lowered to $-20^{\circ}C$. We accounted for the effect of low-temperature curing on the turn-off time by using a mathematical model and by observing images obtained via scanning electron microscopy. We also confirmed that low-temperature curing is more effective in reducing the response time when the device is operated at a low temperature.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.154-157
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• 2012

We present the simultaneous growth of single-walled carbon nanotubes and graphene with the optimal conditions of the synthesizing parameters. The dense and vertically aligned SWNTs having the length of over 100 ㎛ was grown by 2 nm-thick Fe catalytic layer. From 650 ℃, the vertically well-grown SWNTs were obtained by increasing the temperature. The severallayered graphene was synthesized with the gas mixing ratio of 15 : 1(H2 : C2H2) at 650 ℃ and higher temperatures. With these optimal conditions, the vertically well-grown SWNTs and the several-layered graphene were synthesized simultaneously. The presence of SWNTs and the layer of graphene were verified by field emission scanning electron microscopy and high resolution transmission electron microscopy. From the result of this simultaneous synthesizing approach, the possibility of one step growth process of CNTs and grapheme could be verified.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.242-248
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• 2009

Forsterite is a crystalline magnesium silicate with chemical formula $Mg_2SiO_4$, which has extremely low electrical conductivity that makes it an ideal substrate material for electronics. In this study, forsterite precursors were synthesized with magnesium silicate gels from the mixture of magnesium nitrate solution and various sodium silicate solution by the geopolymer technique. Precursors and heattreated powders were characterized by thermogravimetrical differential thermal analyzer(TG-DTA), X-ray diffractometer(XRD), scanning electron microscopy(SEM), Si magic angle spinning nuclear magnetic resonance(MAS-NMR), transmission electron microscopy(TEM). As the result of analysis about the crystallization behavior by DTA, the synthesized precursors were crystallized in the temperature range of $700^{\circ}C$ to $900^{\circ}C$. The XRD results showed that the gel composition began to crystallize at various temperature. Also, it was found that the sodium orthosilicate based precursors(named as 'FO') began to crystallize at above $550^{\circ}C$. The FO peaks were much stronger than sodium silicate solution based precursors(named as 'FW'), sodium metasilicate based precursors(named as 'FM') at $800^{\circ}C$. TEM investigation revealed that the 100nm particle sized sample was obtained from FO by heating up to $800^{\circ}C$.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1332-1336
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• 2004

Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by $N_2$ gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after $N_2$ plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by $N_2$ plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/$\mu$m, but the a-C film treated by $N_2$ plasma for 30 min exhibit threshold field as low as 6.5 V/$\mu$m.

• Journal of Welding and Joining
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• v.11 no.1
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• pp.21-32
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• 1993

A cracking failure of a austenitic stainless steel elbow in a naphtha cracking line in a petrochenmical plant occurred, resulting in leakage of organic compound flowing inside the elbow. Due to the failure, emergency shutdown of the plant was enforced to repair the troubled part of the line. The repair cost as well as production loss during the unscheduled plant shutdown has cost the company a great amount of financial loss. In this studies, a failure analysis of the cracked elbow was performed using NDT, chemical analysis, microstructural analysis including optical microscopy as well as scanning electron microscopy with EPMA, mechanical testings such as tensile testing, hardness testing and Charphy impact test fractography. The results indicated that several problems such as a welding defect and presence of a detrimental phase which was found to be relate to improper postforming heat treatment process was identified and the failure was concluded to be due to a low temperature embrittlement of the defect-containing elbows.

• Polymer(Korea)
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• v.26 no.6
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• pp.812-820
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• 2002

The positive temperature coefficient (PTC) characteristics of polymer composites were investigated with the nano-sized carbon black particles using solution tasting and melt compounding methods. The polymeric PTC composites should the electrical threshold at 35 wt% for the melt compounding method and 40 wt% for the solution casting method. The ethylene vinylacetate copolymer (EVA) composite showed a gradual increase of resistance as a function of temperature and showed a maximum at the polymer molting point. The resistance of the high-density polythylene (HDPE) composite remains unchanged with temperature but started to Increase sharply near the melting point of HDPE and showed a maximum resistance at the melting point of HDPE. The dispersion of nano-sized carbon black particles was investigated by scanning electron microscopy (SEM) and low resistance after electrical threshold, and both methods exhibited a well dispersed morphology. When the electric current was applied to the PTC composites, the resistance started increasing at the curie temperature and further increased until the trip temperature was roached. Then the resistance remained stable over the trip temperature. The secondary increase started at T$\sub$m/ of matrix polymer and kept increasing up to the trip temperature.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.245-249
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• 2015

Vertically coupled low density InGaAs quantum dots (QDs) buried in GaAs matrix were grown with migration enhanced molecular beam epitaxy method as a candidate for quantum information processing devices. We performed excitation power-dependent photoluminescence measurements at cryogenic temperature to analyze the effects of vertical coupling according to the variation in thickness of spacer layer. The more intense coupling effects were observed with the thinner spacer layer, which modified emission properties of QDs significantly. The low surface density of QDs was observed by atomic force microscopy, and scanning transmission electron microscopy verified the successful vertical coupling between low density QDs.