• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.206-209
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• 2006

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ without substrate heating in comparison with $2.65\;{\times}\;10{-3}\;{\Omega}{\cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar\;+\;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.33-37
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• 2000

Properties of electrical discharge in flames and influence of plasma electrons on gas neutrals are investigated by making use of the ionization cross section of air. Frames have three distinctive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature T$\_$g/, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow a significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygen by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation.

• Journal of the Korean Graphic Arts Communication Society
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• v.23 no.2
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• pp.93-101
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• 2005

The measured plasma temperature of Ar hollow cathode discharge for several metal cathodes are about $620\;{\sim}\;780K$ at discharge current of $7\;{\sim}\;10mA$. The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.879-881
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• 1999

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.187-187
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• 2000

Properties of electrical discharge in flames are investigated by making use of the ionization cross section of air. Fames have three distictive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygens by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation. How are you and your family in this new year\ulcorner Professor Choi! I plan to go back Korea on February 6. All my family members are fine and have good time because I am here. Once I am in Korea, I will call you. I am always grateful for your helpful hand. Thank you so much.

• Journal of The Korean Astronomical Society
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• v.9 no.1
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• pp.1-6
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• 1976

The translational and reactive parts of thermal conductivity of a partially ionized solar magneto-plasma gas have been calculated based on Yun and Wyller's formulation (1972) along with Devoto's theory(1968). The computed results are presented as functions of temperature and pressure for given magnetic field strengths. The results of the calculations show that for most photospheric conditions the magnetic field does not play any important role in characterizing thermal properties of the ionized gas. However, when the gas pressure is low(e.g., P<10 dynes/$cm^2)$) the field becomes extremely effective even if its strength is quite small (e.g., B<0.1 gauss). The reactive part of the thermal transport is found to be very important when the gas is undertaking active ionization.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.4711-4717
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• 2011

Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.374-380
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• 1998

Radical and ion densities in a $CF_4$plasma have been calculated as a function of input power density, gas pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and $CF^+$ become dominant neutral and ionic radical at the high power condition. As the pressure increase, ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of $CF_4$feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of $CF_4$monotonically decreases with flow rate, which results in increase in $CF_3$and decrease in CF density. The calculation results show that the $SiO_2$etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.