• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.64-67
• /
• 2000

Tungsten silicide(WSi$_2$) is proposed for the alternate gate electrode of ULSI MOS devices. Good structural property and low resistivity of WSi$_2$ deposited by a low pressure chemical vapor deposition(LPCVD) method directly on SiO$_2$ is obtained after annealing. Especially, WSi$_2$-SiO2 interface remains flat after annealing tungsten silicide at high temperature. Electrical characteristics of annealed WSi$_2$-SiO$_2$-Si(MOS) capacitors were improved in view of charge trapping.

• 전기전자학회논문지
• /
• 제23권2호
• /
• pp.704-709
• /
• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.

• 열처리공학회지
• /
• 제30권4호
• /
• pp.151-155
• /
• 2017

The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

• 한국전기전자재료학회논문지
• /
• 제21권8호
• /
• pp.687-694
• /
• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• 한국초전도ㆍ저온공학회논문지
• /
• 제8권4호
• /
• pp.12-14
• /
• 2006

YBCO coated conductors have been fabricated by the reel-to-reel processing using TFA-MOD method. In this work, the fluorine-free Y & Cu precursor solution was synthesized to shorten the calcining time by reducing the evolution of HF gas, thus the meter-long YBCO precursor films can be made within few hours by the continuous slot-die coating & calcination step using the F-free Y & Cu precursor solution. The annealing step was followed to make the YBCO films by the reel-to-reel method with the vertical gas flow system onto the moving tape. To increase the growth rate of the YBCO films by enhancing the removal of HF gas, the low total pressure was adopted in the annealing processing. And the water partial pressure and the oxygen partial pressure were varied to optimize the growth conditions of the MOD-YBCO films on the buffered metal tape. FE-SEM and XRD were used to investigate the surface morphologies and the texture of the meter-long YBCO films. The end-to-end critical current $(I_c)$ of 63A/cm-width and the critical current density $(J_c)$of $0.9MA/cm^2$ with the thickness of $0.7{\mu}m$ were obtained in the 0.42m long coated conductor.

• 한국진공학회지
• /
• 제9권2호
• /
• pp.144-149
• /
• 2000

Cu(4.5at.% Mg) target을 이용하여 sputtering에 의해 증착된 Cu(Mg) alloy박막의 열처리시 형성되는 산화 방지막 MgO의 박막 특성에 영향을 주는 인자에 대해 살펴보았다. MgO 박막의 산화방지 능력 및 막질에 영향을 주는 인자로는 열처리 온도, $O_2$ 압력, Mg 농도 등으로 나타났다. MgO 박막의 두께는 열처리 온도가 증가함에 따라 증가하다 $500^{\circ}C$ 이상에서는 150 $\AA$ 정도의 성장한계두께를 나타내었다. 표면에 형성되는 MgO 박막은 $O_2$압력이 낮을수록, Mg의 농도가 높을수록 치밀한 MgO가 형성되어 산화방지에 우수한 특성을 보였으며 전 열처리 과정인 진공 열처리 공정은 1at.%정도의 낮은 Mg 농도에서도 치밀한 MgO형성에 매우 효과적임이 확인되었다. 본 연구에서 Cu(Mg) alloy박막의 열처리를 통해 낮은 저항의 Cu박막의 형성과 동시에 산화방지에 우수한 특성을 보이는 MgO 박막을 열처리 온도, $O_2$ 압력, Mg 농도 등의 최적조건을 이용하여 얻어질 수 있음을 확인하였다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제18권2호
• /
• pp.14-17
• /
• 2016

Annealing as-grown electron-doped cuprates under a low oxygen-partial-pressure condition is a necessary step to achieve superconductivity. It has been recently found that the so-called protect annealing results in much better superconducting properties in terms of the superconducting transition temperature and volume fraction. In this article, we report on angle-resolved photoemission spectroscopy studies of a protect-annealed electron-doped cuprate $Pr_{0.9}La_{1.0}Ce_{0.1}CuO_4$ on annealing condition dependent superconducting and pseudo-gap properties. Remarkably, we found that the one showing a better superconducting property possesses almost no pseudo-gap while others have strong pseudo-gap feature due to an anti-ferromagnetic order.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
• /
• pp.108-109
• /
• 2011

유기태양전지를 제작 시에 요구되는 것 중 하나는 active layer의 thermal annealing이다. Thermal thermal annealing 없이는 P3HT의 self-organization이 잘 이뤄지지 않아 비정질의 모습을 보인다. 또한 low band-gap이나 열에 취약한 물질을 사용 시에 태양전지 효율이 낮아지게 된다. 이 점을 착안하여 Active layer에 사용되는 유기용매의 solvent vapor pressure 차이를 이용하여 co-solvent가 되도록 mixing하여, co-solvent로 poly(3-hexylthiopene)(P3HT):[6,6] - phenyl $C_{61}$-butyric acid methyl ester (PCBM)를 blending 하여 active layer로 사용하였으며, 유기태양전지 디바이스 제작 결과 thermal thermal annealing 없이 2.8%까지 도달하였다. X-Ray Diffraction(XRD)과 Atomic Force Microscopy(AFM)를 통하여 P3HT의 결정화가 이루어 졌음을 확인하고 이를 통해 active layer의 thermal annealing이 없이도 P3HT의 self-organization이 이뤄짐을 알 수 있었다.

• 대한금속재료학회지
• /
• 제50권1호
• /
• pp.23-27
• /
• 2012

The color of a natural diamond that contains nitrogen impurities can be enhanced by a high pressure high temperature (HPHT) treatment. Type IaAB diamond samples containing nitrogen impurities were executed by HPHT process of 5.6 Gpa, 10 min by varying the annealing temperature at 1600, 1650, and $1700^{\circ}C$. Property characterization was carried out using an optical microscope, FT-IR spectrometer, low-temperature PL spectrometer, and micro Raman spectrometer. By observing optical micrographs, it can be seen that diamond sample began to alter its color to vivid yellow at $1700^{\circ}C$. In the FT-IR spectrum, there were no Type changes of the diamond samples. However, amber centers leading to brown colors lessened after $1700^{\circ}C$ annealing. In the PL spectrum, all the H4 centers became extinct, while there were no changes of yellow color center H3 before or after treatment. In the Raman spectrum, no graphite spots were detected. Consequently, diamond color enhancement can be done by higher than $1700^{\circ}C$ HPHT annealing at 5.6 GPa-10 min.

• 한국재료학회지
• /
• 제21권8호
• /
• pp.461-467
• /
• 2011

Cu(In, Ga)$Se_2$ (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$, and $Se^{4+}$ ions at -0.6 V (SCE) and pH. 1.8. In order to induce recrystallization, the electrodeposited $Cu_{1.00}In_{0.81}Ga_{0.09}Se_{2.08}$ (25.0 at.% Cu + 20.2 at.% In + 2.2 at.% Ga + 52.0 at.% Se) precursor films were annealed under a high Se gas atmosphere for 15, 30, 45, and 60 min, respectively, at $500^{\circ}C$. The Se amount in the film increased from 52 at.% to 62 at.%, whereas the In amount in the film decreased from 20.8 at.% to 9.1 at.% as the annealing time increased from 0 (asdeposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted with the In present in the precursor films, resulting in the formation of the volatile $In_2Se$. CIGS precursor grains with a cauliflower shape grew as larger grains with the $CuSe_2$ and/or $Cu_{2-x}Se$ faceted phases as the annealing times increased. These faceted phases resulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the empty spaces between the grains were not removed via annealing. Uniform thicknesses of the $MoSe_2$ layers occurred at the 45 and 60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused through the CIGS film. The results obtained in the present research were sufficiently different from comparable studies where the recrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.