• 제목/요약/키워드: low pressure annealing

검색결과 124건 처리시간 0.03초

Improvement in Characteristics of Thin Film Transistors by High Pressure Steam Annealing

  • Nagasawa, Y.;Yamamoto, N.;Chishina, H.;Ogawa, H.;Kawasaki, Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.333-336
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    • 2006
  • High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

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MOD 공정에 의해 제조된 YBCO 박막의 압력 의존성 (Total pressure dependence of YBCO films in MOD method)

  • 유재무;정국채;고재웅;김영국
    • 한국초전도ㆍ저온공학회논문지
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    • 제8권1호
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    • pp.5-8
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    • 2006
  • The growth properties of MOD-YBCO films were investigated. To enhance the growth rate of YBCO layer and inhibit the build-up of HF gas during the annealing process in TFA-MOD for YBCO coated conductors the method of low pressure annealing was employed. Total pressure was changed from 700Torr to 1Torr and its effect on growth of YBCO films was compared with atmospheric one. The lower Pressure was effective to control of the pore size in MOD method . Surface morphology of YBCO films processed at low total pres sure was rough and composed of random YBCO (103) grains. But large pores, usually observed at atmospheric process in MOD disappeared and also the number of pores was reduced at low pressure annealing. Also discussed ate the effects of Fluorine-free Y and Cu precursor solution on the development of microstructure. Dense surface me phology and with less and small pores can be provided through controlling Fluorine content.

두 단계 열처리에 의해 제작된 다결정 실리콘 박막트랜지스터의 전기적 특성의 분석 (Analysis of electrical properties of two-step annealed polycrystalline silicon thin film transistors)

  • 최권영;한민구;김용상
    • 대한전기학회논문지
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    • 제45권4호
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    • pp.568-573
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    • 1996
  • The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

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전열처리 조건에 따른 Bi-2223 초전도 선재에서의 특성 변화 (Superconducting properties of Bi-2223 tapes with various pre-annealing conditions)

  • 하동우;하홍수;오상수;이동훈;윤진국;양주생;최정규;권영길
    • Progress in Superconductivity
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    • 제4권2호
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    • pp.176-179
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    • 2003
  • A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

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Investigation of growth of ZnO thin films via RE sputtering system and in-situ post annealing

  • Jin, Hu-Jie;Lim, Keun-Young;So, Byung-Moon;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.61-62
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    • 2005
  • The present article deals with in situ post annealing of ZnO in sputtering system. The ZnO thin films were grown at low temperature of $100^{\circ}C$ and at working pressure of 15 mTorr with RF magnetron sputtering. Having been gown, ZnO thin films were annealed in situ at different temperatures, at annealing ambient pressure of 15 mTorr and in ambients of oxygen and argon respectively. Through analyses of XRDs, it is can be concluded that the crystallinity of annealed ZnO thin films becomes much better than that of as-grown ZnO thin film.

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Effect of pre-annealing conditions on critical current density of Bi-2223 tapes

  • Ha, Dong-Woo;Yang, Joo-Saeng;Ha, Hong-Soo;Oh, Sang-Soo;Lee, Dong-Hoon;Hwang, Sun-Yuk;Park, Jung-Gyu;Kwon, Young-Kil
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권1호
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    • pp.31-34
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    • 2003
  • Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

YBCO 박막선재용 Ni 기판의 집합도에 미치는 제조공정 변수효과 (Effect of Processing Variables on the Texture of Ni Substrate for YBCO Coated Conductor)

  • 지봉기;임준형;이동욱;주진호;나완수;김찬중;홍계원
    • 한국전기전자재료학회논문지
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    • 제16권10호
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    • pp.938-945
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    • 2003
  • We fabricated Ni-substrate for YBCO coated conductors and evaluated the effects of pressing and annealing temperature and time on texture. Ni substrate was fabricated by powder metallurgy technique and compacts were prepared by applying uniaxial or isostatic pressure. The texture of substrate made by applying cold isostatic pressure (CIP) was stronger than that by uniaxial pressure which we attribute to the fact that the CIP method provided higher density and more uniform density distribution. It was observed that the substrate annealed at 400 C showed both retained texture and recrystallized texture. On the other hand, the texture of substrate significantly improved at annealing temperature above 500 C, forming strong 4-fold symmetry, [111] II ND texture, and FWHM of 9∼10 . It is to be noted that the degree of texture was almost independent of annealing temperature (500∼1000 C) and annealing time(1∼54 min, at 1000 C). EBSD and AFM analysis indicated that 99% of grain boundaries was low angle grain boundary and RMS was approximately 3 nm, respectively. Development of strong cube texture and high fraction of low angle grain boundary of Ni-substrate made by powder metallurgy technique in our study is considered to be suitable for the application of YBCO coated conductors.

Low Temperature Processing of $SrBi_2Ta_2O_9$ Thin Films

  • Choelhwyi Bae;Lee, Jeon-Kook;Park, Dongkyun;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • 제6권2호
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    • pp.110-115
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    • 2000
  • $SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

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열처리 온도 및 분위기 변화에 따른 Bi-2223 초전도 선재에서의 특성변화 (superconducting properties of Bi-2223 tapes with various heat treatment condition)

  • 하동우;이동훈;하홍수;오상수;김홍대;양주생;윤진국;최정규;권영길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.527-530
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    • 2002
  • A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

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