• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.

• Nuclear Engineering and Technology
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• v.46 no.6
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• pp.857-862
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• 2014

Mechanical alloying under various gas atmospheres such as Ar, an Ar-$H_2$ mixture, and He gases were carried out, and its effects on the powder properties, microstructure and mechanical properties of ODS ferritic steels were investigated. Hot isostatic pressing and hot rolling processes were employed to consolidate the ODS steel plates. While the mechanical alloyed powder in He had a high oxygen concentration, a milling in Ar showed fine particle diameters with comparably low oxygen concentration. The microstructural observation revealed that low oxygen concentration contributed to the formation of fine grains and homogeneous oxide particle distribution by the Y-Ti-O complex oxides. A milling in Ar was sufficient to lower the oxygen concentration, and this led a high tensile strength and fracture elongation at a high temperature. It is concluded that the mechanical alloying atmosphere affects oxygen concentration as well as powder particle properties. This leads to a homogeneous grain and oxide particle distribution with excellent creep strength at high temperature.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.331-337
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• 2015

$LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

• Textile Coloration and Finishing
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• v.19 no.1 s.92
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• pp.45-52
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• 2007

Polyacrylonitrile(PAN) fiber was treated with low-temperature plasmas of argon and oxygen for surface modification, and its surface chemical structure and morphology were examined by a field emission scanning electron microscope(FESEM) and a Fourier-transform infrared microspectroscopy(IMS). The argon-plasma treatment caused the only mechanical effect by sputtering of ion bombardment, whereas the oxygen plasma brought about a chemical effect on the PAN fiber surface. The experimental evidences strongly suggested that cyclization of nitrile group and crosslinking were likely to occur in the oxygen-plasma treatment. On the other hand, with the argon-plasma treatment, numerous my pits resulted in ranging from several tens to hundreds nanometers in radius. The plasma sensitivity of functional groups such as C-H, $C{\equiv}N$, and O-C=O groups in the PAN fiber was dependent on their chemical nature of bonding in the oxygen-plasma, in which the ester group was the most sensitive to the plasma. Vacuum-ultraviolet(VUV) radiation emitted during plasma treatment played no substantial role to alter the surface morphology.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.254-260
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• 1995

A method is described for the design and fabrication of the sensor interface circuits on the Clark electrodes for the dissolved oxygen(DO). The discussion includes a method for the +5 V single-supply driving for the sensor circuits, which has low power comsumption for the front-end electronics. DO probe under test is composed of the Clark electrode with silver anode, gold cathode and the electrolyte of half saturated KCI solution and the FEP teflon memtrance for the oxygen penetration. Typical polarograms for the DO probes by using this sensor circuit reveals high accuracy over 99% of the I to V conversion. Partial pressure of oxygen obtained from the polarograms are well suited to the results calculated. It is expected that the proposed sensor circuits can be utilized into the customized IC for the battery-driven small-size DO meters.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.427-430
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• 2008

BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.

• 한국연소학회:학술대회논문집
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• 2015.12a
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• pp.309-311
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• 2015

The MILD(Moderate or Intense Low-oxygen Dilution) combustion has been considered as one of the promising combustion technology for high thermal efficiency and low emissions. In this paper, the effect of fuel oxygen impingement on formation of MILD combustion was analyzed using numerical simulation. This investigation was simulated under the thermal intensity $0.04MW/m^3$ and equivalence ratio 0.91. The results show that the temperature distribution was become relatively uniform and the amount of CO emission was decreased as the increase of oxygen jet velocity and impinging angle.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.495-501
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• 1991

This study is intended to make defect-free region, denuded zone at the silicon wafer surface for semiconductor device substrates. In this experiment, initial oxygen concentration of starting material CZ-grown silicon wafer, various heat treatment combinations, denuding ambient and the amounts of oxygen reduction were measured, and then denuded zone (DZ) formation and depth were investigated. In Low/High anneal (DZ formation could be achieved), the optimum temperature for Low anneal was 700$^{\circ}C$∼750$^{\circ}C$. In case of High anneal, with the time increased, DZ depth was increased at 1000$^{\circ}C$, 1150$^{\circ}C$ respectively, but on the contrary, DZ depth was decreased at low temperature 900$^{\circ}C$. As well, out-diffusion time below 2 hours was unsuitable for effective Gettering technique even though the temperature was high, and DZ formation could be achieved when initial oxygen concentration was only above 14 ppm in silicon wafer.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.355-356
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• 2006

WC-TiC-TaC binderless cemented carbide was oxidized under low partial pressure of oxygen (50ppm) at 873K for 1 to 20 h. Surface roughness was measured using atomic force microscope, and effect of TiC amount on oxidation behavior of the carbide was investigated. WC phase was oxidized more easily than WC-TiC-TaC solid solution phase. With an increase in TiC amount, WC-TiC-TaC phase increased and the oxidation resistance of the carbide increased.