• ETRI Journal
• /
• v.34 no.4
• /
• pp.485-491
• /
• 2012

In this paper, the implementations of a $0.1{\mu}m$ gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single-chip receiver for 70/80 GHz point-to-point communications are presented. To obtain high-gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five-stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five-stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of -1.5 dBm to 1.5 dBm. Finally, a single-chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of -21 dBm.

• Journal of Advanced Navigation Technology
• /
• v.12 no.6
• /
• pp.604-610
• /
• 2008

A 2.4 GHz CMOS RF front-end using for ZigBee application is described The front-end consists of a low noise amplifier and a down-mixer and uses a 2 MHz IF frequency. A common source with resistive feedback and an inductive degeneration are adopted for a low noise amplifier, and a 20 dB gain control step is digitally controlled. A passive mixer for low current consumption is employed. The RF front-end is implemented in 0.18 ${\mu}m$IP6M CMOS process. The measured performance is 4.44 dB NF and -6.5 dBm IIP3 while consuming 3.28 mA current from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.10 s.352
• /
• pp.111-117
• /
• 2006

Reconfigurable CMOS low-noise amplifier (LAN) has been developed for multi-mode/multi-band wireless receiver. By employing common-gate input stage, the performance can be optimized for multiple operation bands by simply controlling the output load impedance. Although the conventional common-gate LAN has larger than 3dB noise figure (NF), the newly developed negative feedback scheme enables the common-gate input LNA to have less than 2dB NF. To have optimum linearity performance of wireless receiver, the gain of the LNA can be controlled. The LNA implemented in a 0.13mm CMOS technology shows $19{\sim}20dB$ voltage gain, $1.7{\sim}2.0dB$ NF, -2dBm iIP3 at $1.8{\sim}2.5GHz$ frequency range. The LNA dissipates 7mW from a 1.2V supply voltage.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.10A
• /
• pp.1223-1229
• /
• 2004

A variable-gain low-voltage low noise amplifier MMIC operating at 5GHz frequency band is designed and implemented using the ETRI 0.5$\mu\textrm{m}$ GaAs MESFET library process. This low noise amplifier is designed to have the variable gain for adaptive antenna array combined in HIPERLAN/2. The feedback circuit of a resistor and channel resistance controlled by the gate voltage of enhancement MESFET is proposed for the variable-gain low noise amplifier consisted of cascaded two stages. The fabricated variable gain amplifier exhibits 5.5GHz center frequency, 14.7dB small signal gain, 10.6dB input return loss, 10.7dB output return loss, 14.4dB variable gain, and 2.98dB noise figure at V$\_$DD/=1.5V, V$\_$GGl/=0.4V, and V$\_$GG2/=0.5V. This low noise amplifier also shows-19.7dBm input PldB, -10dBm IIP3, 52.6dB SFDR, and 9.5mW power consumption.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.7 s.361
• /
• pp.23-28
• /
• 2007

A dual-band GaAs FET low noise amplifier (LNA) with an input LC-tank circuit is designed using inductance source feedback for wireless LAN, and output matching is realized with low-pass Cheyshev filter impedance transforming circuit. Some design techniques for dual band LNA have been developed including input and output design equations. The measured results shows close agreement with the predicted performance.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.12
• /
• pp.2286-2292
• /
• 2011

In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.941-944
• /
• 2005

In this paper, the analysis of input power matching for CMOS RF Low Noise Amplifier (LNA) design is introduced. With two input power matching techniques, the performance of LNAs is estimated according to gain and noise figure. This process can be expressed easily by theoretical method and using simulation. These analytical methods are useful in that they can provide enough insights for designing CMOS RF LNAs.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.96-99
• /
• 2003

This paper presents the development of a Ku-band Low Noise Amplifier with the Noise figure of 1.4dBmax, the gain of 35dB, and the In/Out Return toss of -22dB/-18dB in the frequency range from 14 to 14.5GHz for Satellite transponders. All RF components were assembled using a hybrid technology with 15-mil thin-film substrates. The mechanical and thermal design of the housing was performed considering a vibration and a vacuum of space environment.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.489-490
• /
• 2006

This paper presents a switch type 2.4/5.8 GHz dual band low-noise amplifier, designed with $0.13{\mu}m$ RF CMOS technology. Using MOS switch allows the LNA to have two different input transconductance and output capacitance modes. Given supply voltage of 1.2 V, the simulation exhibits gains of 8.1 dB and 17.1 dB, noise figures of 3.1 dB and 2.57 dB and power consumptions of 13.0 mW and 10.2 mW at 2.4 GHz and 5.8 GHz, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.6
• /
• pp.1158-1165
• /
• 2004

This paper describes the design of a two stage 1V power supply SiGe Low Noise Amplifier operating at 5.25㎓ for 802.lla wireless LAN application. The achieved performance includes a gain of 17㏈, noise figure of 2.7㏈, reflection coefficient of 15㏈, IIP3 of -5㏈m, and 1-㏈ compression point of -14㏈m. The total power consumption of the circuit was 7㎽ including 0.5㎽ for the bias circuit.