• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.43 no.4
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• pp.31-39
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• 2011

One of the main drawbacks of wood fibers based composite materials are their tendency to swell due to moisture uptake in wet and moist environments. The main contribution to the hygroexpansion usually comes from the hydrophilic wood fibers. Recent trend toward the high speed printing, copying, and precision converting precesses demands a high level of dimensional stability under various environmental conditions. The purpose of this study was to investigate the dimensional stability of softwood bleached kraft pulp handsheets depending on wet pressing conditions. By increasing the number of wet pressing, dimensional stability was decreased because of increased fiber-to-fiber bonding. Hygroexpansion of handsheets had a linear relationship with the relative bonded area and equilibrium moisture contents. Dip elongation was decreased when the number of wet pressing was increased because of increased fiber-to-fiber bonding to resist low load in water.

• Investigative Magnetic Resonance Imaging
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• v.23 no.1
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• pp.26-33
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• 2019

Purpose: Diffusion tensor imaging (DTI) data must be analyzed by an analyzer after data processing. Hence, the analyzed data of DTI might depend on the analyzer, making it a major limitation. This paper reviewed previous DTI studies reporting the repeatability and reproducibility of data from the corticospinal tract (CST), one of the most actively researched neural tracts on this topic. Materials and Methods: Relevant studies published between January 1990 and December 2018 were identified by searching PubMed, Google Scholar, and MEDLINE electronic databases using the following keywords: DTI, diffusion tensor tractography, reliability, repeatability, reproducibility, and CST. As a result, 15 studies were selected. Results: Measurements of the CSTs using region of interest methods on 2-dimensional DTI images generally showed excellent repeatability and reproducibility of more than 0.8 but high variability (0.29 to 1.00) between studies. In contrast, measurements of the CST using the 3-dimensional DTT method not only revealed excellent repeatability and reproducibility of more than 0.9 but also low variability (repeatability, 0.88 to 1.00; reproducibility, 0.82 to 0.99) between studies. Conclusion: Both 2-dimensional DTI and 3-dimensional DTT methods appeared to be reliable for measuring the CST but the 3-dimensional DTT method appeared to be more reliable.

• Korean Journal of Materials Research
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• v.25 no.10
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• pp.537-542
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• 2015

One-dimensional (1D) silver nanostructures, which possess the highest conductivity among all room-temperature materials, moderate flexibility and high transmittance, are one of the most promising candidate materials to replace conventional indium tin oxide transparent electrodes. However, the short length and large diameter of 1D silver nanostructures cause a substantial decrease in the optical transparency or an increase in the sheet resistance. In this work, ultra-long silver nanofiber networks were synthesized with a low-cost and scalable electrospinning process, and the diameter of the nanofibers were finetuned to achieve a higher aspect ratio. The decrease in the diameter of the nanofibers resulted in a higher optical transparency at a lower sheet resistance: 87 % at $300{\Omega}/sq$, respectively. It is expected that an electrospun silver nanofiber based transparent electrode can be used as a key component in various optoelectronic applications.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.6 no.4
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• pp.34-38
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• 1997

This paper presents a joining method by using the silicon wafer in order to apply to joint to the 3-dimensional structures of semiconductor device, high-speed , high integration, micro machine, silicon integrated sensor, and actuator. In this study, the high atomic beam, stabilized by oxidation film and organic materials at the material surface, is investigated, and the purified is obtained by removing the oxidation film and pollution layer at the materials. And the unstable surface is obtained, which can be easily joined. In order to use the low temperatures for the joint method, the main subjects are obtained as follows: 1) In the case of the silicon wafer and the silicon wafer and the silicon wafer of alumina sputter film, the specimens can be jointed at 2$0^{\circ}C$, and the joining strength is 5Mpa. 2) The specimens can not always be joined at the room temperatures in the case of the silicon wafer and the silicon wafer of alumina sputter film.

• Journal of the Korea Computer Industry Society
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• v.9 no.3
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• pp.105-114
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• 2008

We present an eye tracking system using a low cost 3D CMOS imager for 3D displays that ensures a correct auto stereoscopic view of position- dependent stereoscopic 3D images. The tracker is capable of segmenting the foreground objects (viewer) from background objects using their relative distance from the camera. The tracker is a novel 3D CMOS Image Sensor based on Time of Flight (TOF) principle using innovating photon gating techniques. The basic feature incorporates real time depth imaging by capturing the shape of a light-pulse front as it is reflected from a three dimensional object. The basic architecture and main building blocks of a real time depth CMOS pixel are described. For this application, we use a stereoscopic type of display using parallax barrier elements that is described as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.578-578
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• 2012

Graphene, a flat one-atom-thick two-dimensional layer of carbon atoms, is considered to be a promising candidate for nanoelectronics due to its exceptional electronic properties. Most of all, future nanoelectronics such as flexible displays and artificial electronic skins require low cost manufacturing process on flexible substrate to be integrated with high resolutions on large area. The solution based printing process can be applicable on plastic substrate at low temperature and also adequate for fabrication of electronics on large-area. The combination of printed electronics and graphene has allowed for the development of a variety of flexible electronic devices. As the first step of the study, we prepared the gate electrodes by printing onto the gate dielectric layer on PET substrate. We showed the performance of graphene field-effect transistor with electrohydrodynamic (EHD) inkjet-printed Ag gate electrodes.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Carbon letters
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• v.22
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• pp.1-13
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• 2017

Porous materials play a vital role in science and technology. The ability to control their pore structures at the atomic, molecular, and nanometer scales enable interactions with atoms, ions and molecules to occur throughout the bulk of the material, for practical applications. Three-dimensional (3D) porous carbon-based materials (e.g., graphene aerogels/hydrogels, sponges and foams) made of graphene or graphene oxide-based networks have attracted considerable attention because they offer low density, high porosity, large surface area, excellent electrical conductivity and stable mechanical properties. Water pollution and associated environmental issues have become a hot topic in recent years. Rapid industrialization has led to a massive increase in the amount of wastewater that industries discharge into the environment. Water pollution is caused by oil spills, heavy metals, dyes, and organic compounds released by industry, as well as via unpredictable accidents. In addition, water pollution is also caused by radionuclides released by nuclear disasters or leakage. This review presents an overview of the state-of-the-art synthesis methodologies of 3D porous graphene materials and highlights their synthesis for environmental applications. The various synthetic methods used to prepare these 3D materials are discussed, particularly template-free self-assembly methods, and template-directed methods. Some key results are summarized, where 3D graphene materials have been used for the adsorption of dyes, heavy metals, and radioactive materials from polluted environments.