Characteristics of Silicon Carbide Nanowires Synthesized on Porous Body by Carbothermal Reduction

  • Kim, Jung-Hun (Division of Materials Science and Engineering, Hanyang University) ;
  • Choi, Sung-Churl (Division of Materials Science and Engineering, Hanyang University)
  • Received : 2018.02.13
  • Accepted : 2018.05.04
  • Published : 2018.05.31


We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.


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