• 센서학회지
• /
• 제28권1호
• /
• pp.17-22
• /
• 2019

As CMOS technology scales down, reliability is becoming an important concern for VLSI designers. This paper analyzes gate-oxide breakdowns (i.e., the time-dependent dielectric-breakdown (TDDB) aging effect) as a reliability issue for combinational circuits with 45-nm technology. This paper shows simulation results for the noise margin, delay, and power using a single inverter-chain circuit, as well as the International Symposium on Circuits and Systems (ISCAS)'85 benchmark circuits. The delay and power variations in the presence of TDDB are also discussed in the paper. Finally, we propose a novel method to compensate for the logic failure due to dielectric breakdowns: We used a higher supply voltage and a negative ground voltage for the circuit. The proposed method was verified using the ISCAS'85 benchmark circuits.

• 센서학회지
• /
• 제29권1호
• /
• pp.68-73
• /
• 2020

This paper proposes an asynchronous circuit design methodology using a new Single Gate Sleep Convention Logic (SG-SCL) with advantages such as low area overhead, low power consumption compared with the conventional null convention logic (NCL) methodologies. The delay-insensitive NCL asynchronous circuits consist of dual-rail structures using {DATA0, DATA1, NULL} encoding which carry a significant area overhead by comparison with single-rail structures. The area overhead can lead to high power consumption. In this paper, the proposed single gate SCL deploys a power gating structure for a new {DATA, SLEEP} encoding to achieve low area overhead and low power consumption maintaining high performance during DATA cycle. In this paper, the proposed methodology has been evaluated by a liquid state machine (LSM) for pattern and digit recognition using FPGA and a 0.18 ㎛ CMOS technology with a supply voltage of 1.8 V. the LSM is a neural network (NN) algorithm similar to a spiking neural network (SNN). The experimental results show that the proposed SG-SCL LSM reduced power consumption by 10% compared to the conventional LSM.

• 한국통신학회논문지
• /
• 제14권3호
• /
• pp.189-196
• /
• 1989

본 논문에서는 BICMOS 게이트 어레이 시스템 구성시 내부의 논리회로 부분은 CMOS 소자로 입출력부는 바이폴라 소자를 이용할 수 있는 공정과 소자 개발을 하고자 하였다. BICMOS게이트 어레이 공정은 폴리게이트 p-well CMOS 공정을 기본으로 하였고, 소자설계의 기본개념은 공정흐름을 복잡하지 않게 하면서 바이폴라, CMOS 소자 각각의 특성을 좋게 하는데 두었다. 시험결과로서, npn1 트랜지스터의 hFE 특성은 120(Ic=1mA) 정도이고, CMOS 소자에서는 n-채널과 p-채널이 각각 1.25um, 1.35um 까지는 short channel effect 현상이 나타나지 않았고, 41stage ring oscillator의 게이트당 delay 시간은 0.8ns이었다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.823-826
• /
• 2003

FPGA-based logic emulator with lane gate capacity generally comprises a large number of FPGAs connected in mesh or crossbar topology. However, gate utilization of FPGAs and speed of emulation are limited by the number of signal pins among FPGAs and the interconnection architecture of the logic emulator. The time-multiplexing of interconnection wires is required for multi-FPGA system incorporating several state-of-the-art FPGAs. This paper proposes a circuit partitioning algorithm called SCATOMi(SCheduling driven Algorithm for TOMi)for multi-FPGA system incorporating four to eight FPGAs where FPGAs are interconnected through TOMi(Time-multiplexed, Off-chip, Multicasting interconnection). SCATOMi improves the performance of TOMi architecture by limiting the number of inter-FPGA signal transfers on the critical path and considering the scheduling of inter-FPGA signal transfers. The performance of the partitioning result of SCATOMi is 5.5 times faster than traditional partitioning algorithms. Architecture comparison show that the pin count is reduced to 15.2%-81.3% while the critical path delay is reduced to 46.1%-67.6% compared to traditional architectures.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제7권4호
• /
• pp.215-220
• /
• 2007

Leakage current of CMOS circuits has become a major factor in VLSI design these days. Although many circuit-level techniques have been developed, most of them require significant amount of designers' effort and are not aligned well with traditional VLSI design process. In this paper, we focus on technology mapping, which is one of the steps of logic synthesis when gates are selected from a particular library to implement a circuit. We take a radical approach to push the limit of technology mapping in its capability of suppressing leakage current: we use a probabilistic leakage (together with delay) as a cost function that drives the mapping; we consider pin reordering as one of options in the mapping; we increase the library size by employing gates with larger gate length; we employ a new flipflop that is specifically designed for low-leakage through selective increase of gate length. When all techniques are applied to several benchmark circuits, leakage saving of 46% on average is achieved with 45-nm predictive model, compared to the conventional technology mapping.

• 센서학회지
• /
• 제33권3호
• /
• pp.134-138
• /
• 2024

In this study, we propose a ternary D flip-flop using tristate ternary inverters for an energy-efficient ternary circuit design of sequential logic. The tristate ternary inverter is designed by adding the functionality of the transmission gate to a standard ternary inverter without an additional transistor. The proposed flip-flop uses 18.18% fewer transistors than conventional flip-flops do. To verify the advancement of the proposed circuit, we conducted an HSPICE simulation with CMOS 28 nm technology and 0.9 V supply voltage. The simulation results demonstrate that the proposed flip-flop is better than the conventional flip-flop in terms of energy efficiency. The power consumption and worst delay are improved by 11.34% and 28.22%, respectively. The power-delay product improved by 36.35%. The above simulation results show that the proposed design can expand the Pareto frontier of a ternary flip-flop in terms of energy consumption. We expect that the proposed ternary flip-flop will contribute to the development of energy-efficient sensor systems, such as ternary successive approximation register analog-to-digital converters.

• 대한전자공학회논문지
• /
• 제25권5호
• /
• pp.509-521
• /
• 1988

In the designs of integrated circuits, the buffer circuits used for driving a large capacitive load from minimum-structured logic circuit outputs have important effects upon system throughputs. Therefore it is important to optimize the buffer circuits. In this paper, the principle of designing CMOS buffer circuits which have the minimum delay and drive the given capacitive load is discussed. That is, the effects of load capacitance upon rise time, fall time, and delay of the CMOS inverter and the effects of parasitic capacitances are finely analysed to calculate the requested minimum-delay CMOS buffer condition. This is different from the method by C.A. Mead et. al.[2.3.4.]which deals with passive-load-nMOS buffers. Large channel width MOS transistor stages are necessary to drive a large capacitive load. The effects of polysilicon gate resistances of such large stages upon delay are also analysed.And, the area of buffer circuits designed by the proposed method is smaller than that of buffer circuits designed by C.A. Mead's method.

• 한국통신학회논문지
• /
• 제17권5호
• /
• pp.509-520
• /
• 1992

AIGaAs/GaAs HBT를 이용한 고속 디지틀 시스템에 사용 될 CML OR/NOR 논리게이트를 설계하였다. HBT모델링은 직접 추출법, Gummel-poon모델을 혼합한 형태로 등가회로를 얻었으며 PSPICE를 이용한 시뮬레이션 결과, 전달지연시간이 25ps로써 차단 토글주파수가200Hz에 이르는 초고속 특성을 가지고 기 보고된 HBT의 ECL이나 ME.IFET SCFL에 비하여 noise margin이 커서 입력변동에 비한 잡음에 강하며 fan-out특성이 우수함을 확인하였다.

• 한국산업정보학회논문지
• /
• 제17권3호
• /
• pp.27-34
• /
• 2012

This paper presents the impact of time dependent dielectric breakdown (TDDB, also called as gate oxide breakdown) failure on nanoscale digital CMOS Circuits. Recently, TDDB for ultra-thin gate oxides has been considered as one of the critical reliability issues which can lead to performance degradation or logic failures in nanoscale CMOS devices. Also, leakage power in the standby mode can be increased significantly. In this paper, TDDB aging effects on large CMOS digital circuits in the 45nm technology are analyzed. Simulation results show that TDDB effect on MOSFET circuits can result in more significant increase of power consumption compared to delay increase.

• 한국지능시스템학회:학술대회논문집
• /
• 한국퍼지및지능시스템학회 2003년도 ISIS 2003
• /
• pp.154-157
• /
• 2003

In order for testing faults of combinatorial logic circuit, the authors have developed a new diagnosis method: "Neural Network (NN) fault diagnosis", based on fm error back propagation functions. This method has proved the capability to test gate faults of wider range including so called SSA (single stuck-at) faults, without assuming neither any set of test data nor diagnosis dictionaries. In this paper, it is further shown that what kind of fault models can be detected in the NN fault diagnosis, and the simply modified one can extend to test delay faults, e.g. logic hazard as long as the delays are confined to those due to gates, not to signal lines.