• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.1
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• pp.56-65
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• 2011

A new hybrid mount system is proposed for microvibration control in a high-tech factory. The mount consists of an airspring as a passive device and a piezostack actuator as an active device. The two devices are connected in series. Some numerical simulations and experimental tests are carried out to evaluate isolation performance of the mount system comprising of four proposed hybrid mounts. As a control logic, the specific algorithm is adopted for considering multiple target frequencies of excitation based on a Filtered-X LMS algorithm. The results are compared with isolation performance of the passive airspring mount system. It is confirmed that the proposed hybrid mount system has great performance on microvibration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1611-1614
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• 2010

The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

• Vacuum Magazine
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• v.3 no.1
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• pp.22-31
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• 2016

Although graphene has been considered as one of the promise materials for future logic devices due to extremely high mobility, its applications in electronics have been limited to a few cases such as a flexible interconnect, and RF devices. Furthermore, most of the studies on graphene devices reported unstable operations, claimed to be due to the poor quality of graphene. Nevertheless, recent studies showed that the electrical performance of graphene field effect transistor could be stabilized even with CVD graphene when well-established integration processes to control the interface of graphene were used. These results indicate that as in the case of silicon devices, a proper control of graphene interface is very important for the stable operation of graphene device as well as other 2D material based devices.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.1-5
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• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Journal of Sensor Science and Technology
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• v.21 no.1
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• pp.21-27
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• 2012

In this study, we designed an embedded system for automatic condensation control(ESCC) of the car. This system heats the car glasses as and when it is needed that makes driving safer and convenient. The system was built on an ATmega128L central processing unit(CPU), using high-performance electrically erasable programmable read-only memory(EEPROM) complex programmable logic device(CPLD) ATF1504AS, using which an ESCC algorithm has been proposed. The source code was written in C language. The algorithm of work was written using the dew-point table. This system not only clears the condensation on the glass but also averts condensation. The designed ESCC system begins working once the input information comes close to the dew-point table information. This device enables a wider field of view, thereby increasing safety.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.703-708
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• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.868-873
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• 2008

Train brake system is generally composed of an electronic brake and an air brake device, which has a crucial role for safety of the train. In this paper, a dynamic model for a tilting train, Hanvit-200 (TTX) has been derived for the purpose of developing a HILS system for the air brake device and anti-skid logic. Moreover, simulation studies has been conducted using Simulink software for skid situations. Simulation results demonstrate the validity of the proposed dynamic model.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.14 no.1
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• pp.34-40
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• 2014

Today, with the wide use of mobile devices, the amount of business transactions conducted through such devices is increasing drastically. However, there are several limitations in the area of authentication for mobile use, which requires strong authentication mechanisms to satisfy security and convenience requirements. The proposed model and application system provide a framework to ensure the security and reliability of the flow of biometric information for telebiometric applications using mobile devices. We also specify protocols for each model and implement a mobile telebiometric application to improve security vulnerabilities compared to storage in a microSD match on card (MOC) based on the proposed model. As a consequence of this implementation, we propose substantial guidelines for security countermeasures from both technical and managerial perspectives in order to establish a safe mobile environment for the use of telebiometric systems.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.11
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• pp.33-38
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• 2011

In this paper, the effect of pulse current and generated heat on characteristics of the LED is measured and evaluated. For experiments, the LED driving circuit and digital logic which determines period and duty ratio of lighting are designed. At rated current, the temperature and optical characteristics of the LED with change in duty ratio and period are compared, and those of the LED with change in duty ratio and existence of cooling fan are also compared at constant average current. As a result, frequency does not affect device temperature and optical characteristic of the LED but duty ratio does. Also, the cooling fan is less effective on those of the LED at rated current.