• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.790-795
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• 1998

Fabrication of inverted staggered power TFT devices and electrical characteristic were investigated. 16 fingers with drain and source electrode of TFT and 100V output voltage were designed successfully. It is observed that as $V_g$ increased, $I_d$ increase exponentially. Because of localized deep states of a-Si, $I_d$ shows irregular variation at low voltage. Output and transfer characteristic showed the same as typical variation. But electrical characteristic strongly depend on the channel length and thickness of silicon nitride and amorphous silicon.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.13-19
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• 1998

We have calculated the electronic structure of impurity atoms in metal host by using the tight binding model in the recursion method. For a self-consistent calculation, we assumed that the effect of impurity introduction was localized only at the impurity site and its neighbours. We calculated the Madelung term by limiting the contribution to Vm of the charge perturbations to the first shell around the impurity with Evjen technique. The calculated local density of states and charge transfer values have been compared with the experimental values for a single impurity in metal host. We fund that d-reso-nance state came from the repulsive interaction between impurity d-state and host band, and the position of d-resonance state depended on the difference of valence electrons between the host and the impurity. the results also showed that the charge transfer value between an impurity and host metal was comparable to the ionicity difference between them.

• Structural Engineering and Mechanics
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• v.51 no.5
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• pp.809-821
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• 2014

The truss based steel bridge structures usually consists of gusset plates which lose their load carrying capacity and rigidity under the effect of repeated and dynamics loads. This paper is focused on modeling the nonlinear material behavior of the gusset plates of the Truss Based Bridges subjected to dynamics loads. The nonlinear behavior of material is characterized by a damage coupled elsto-plastic material models. A truss bridge finite element model is established in Abaqus with the details of the gusset plates and their connections. The nonlinear finite element analyses are performed to calculate stress and strain states in the gusset plates under different loading conditions. The study indicates that damage initiation occurred in the plastic deformation localized region of the gusset plates where all, diagonal, horizontal and vertical, truss member met and are critical for shear type of failure due tension and compression interaction. These findings are agreed with the analytical and experimental results obtained for the stress distribution of this kind gusset plate.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.273-277
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.133-133
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• 2016

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.246-246
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• 2016

Tungsten-nitrogen (W-N) co-doping has been known to enhance the photocatalytic activity of anatase titania nanoparticles by utilizing visible light. The doping effects are, however, largely dependent on calcination or annealing conditions, and thus, the massive production of quality-controlled photocatalysts still remains a challenge. Using density functional theory (DFT) thermodynamics and time-dependent DFT (TDDFT) computations, we investigate the atomic structures of N doping and W-N co-doping in anatase titania, as well as the effect of the thermal processing conditions. We find that W and N dopants predominantly constitute two complex structures: an N interstitial site near a Ti vacancy in the triple charge state and the simultaneous substitutions of Ti by W and the nearest O by N. The latter case induces highly localized shallow in-gap levels near the conduction band minimum (CBM) and the valence band maximum (VBM), whereas the defect complex yielded deep levels (1.9 eV above the VBM). Electronic structures suggest that substitutions of Ti by W and the nearest O by N improves the photocatalytic activity of anatase by band gap narrowing, while defective structure degrades the activity by an in-gap state-assisted electron-hole recombination, which explains the experimentally observed deep level-related photon absorption. Through the real-time propagation of TDDFT (rtp-TDDFT), we demonstrate that the presence of defective structure attracts excited electrons from the conduction band to a localized in-gap state within a much shorter time than the flat band lifetime of titania. Based on these results, we suggest that calcination under N-rich and O-poor conditions is desirable to eliminate the deep-level states to improve photocatalysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Radiation Oncology Journal
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• v.35 no.2
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• pp.137-143
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• 2017

Purpose: To analyze the utilization and fractionation of extreme hypofractionation via stereotactic body radiotherapy (SBRT) in the treatment of prostate cancer. Materials and Methods: Data was analyzed on men diagnosed with localized prostate cancer between 2004-2012 and treated with definitive-intent radiation therapy, as captured in the National Cancer Database. This database is a hospital-based registry that collects an estimated 70% of all diagnosed malignancies in the United States. Results: There were 299,186 patients identified, of which 4,962 (1.7%) were identified as receiving SBRT as primary treatment. Of those men, 2,082 had low risk disease (42.0%), 2,201 had intermediate risk disease (44.4%), and 679 had high risk disease (13.7%). The relative utilization of SBRT increased from 0.1% in 2004 to 4.0% in 2012. Initially SBRT was more commonly used in academic programs, though as time progressed there was a shift to favor an increased absolute number of men treated in the community setting. Delivery of five separate treatments was the most commonly utilized fractionation pattern, with 4,635 patients (91.3%) receiving this number of treatments. The most common dosing pattern was $725cGy{\times}5fractions$ (49.6%) followed by $700cGy{\times}5fractions$ (21.3%). Conclusions: Extreme hypofractionation via SBRT is slowly increasing acceptance. Currently $700-725cGy{\times}5fractions$ appears to be the most commonly employed scheme. As further long-term data regarding the safety and efficacy emerges, the relative utilization of this modality is expected to continue to increase.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.23-29
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• 2020

Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO₂). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO₂ layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO₂ layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO₂-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO₂) and silicone (Si).

• Korean Journal of Geomatics
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• v.3 no.2
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• pp.129-140
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• 2004

This paper addresses solutions th the challenges of carrier phase integer ambiguity resolution and cycle slip detection/identification, for maintaining high accuracy of an integrated GPS/Pseudolite/INS system. Such a hybrid positioning and navigation system is an augmentation of standard GPS/INS systems in localized areas. To achieve the goal of high accuracy, the carrier phase measurements with correctly estimated integer ambiguities must be utilized to update the system integration filter's states. The contribution presents an effective approach to increase the reliability and speed of integer ambiguity resolution through using pseudolite and INS measurements, with special emphasis on reducing the ambiguity search space. In addition, an algorithm which can effectively detect and correct the cycle slips is described as well. The algorithm utilizes additional position information provided by the INS, and applies a statistical technique known as th cumulative-sun (CUSUM) test that is very sensitive to abrupt changes of mean values. Results of simulation studies and field tests indicate that the algorithms are performed pretty well, so that the accuracy and performance of the integrated system can be maintained, even if cycle slips exist in the raw GPS measurements.