• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.243-244
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• 2013

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.127-128
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• 2008

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.6
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• pp.756-760
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• 2011

This paper proposed an alignment stage driven by piezo actuators for alignment process of a contact-type lithography. Among contact-type lithography processes, an UV-curable nanoimprint process is an unique process to be able to align patterns on upper and lower layers. An alignment stage of the UV-curable nanoimprint process requires nano-level resolution as well as high stiffness to overcome friction force due to contact moving. In this paper, the alignment stage consists of a compliant mechanism using flexure hinges, piezo actuators for high force generation, and capacitive sensors for high-resolution measurement. The compliant mechanism is implemented by four prismatic-prismatic compliant chains for two degree-of-freedom translations. The compliant mechanism is composed of flexure hinges with high stiffness, and it is directly actuated by the piezo actuators which increases the stiffness of the mechanism, also. The performance of the ultra-precision stage is demonstrated by experiments.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.22-26
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• 2003

Overlap Errors and side-lobes have been simultaneously solved by the rule-based correction using the rules extracted from test patterns. Lithography process parameters affecting attPSM lithography process have been determined by the fitting method to the real process data. The correction using scattering bars has been compared to the Cr shield method. The optimal insertion rule of the scattering bal's has made it possible to suppress the side-lobes and to enhance DOF at the same time. Therefore, in this paper, the solution to both side-lobe and overlap Error has been proposed using rule-based confection. Compared to the existing Cr shield method, the proposed rule-based correction with scattering bars can reduce the process complexity and time for mask production.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.2
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• pp.144-153
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• 2009

It is widely known that no-slip assumptions are often violated on regular basis in micrometer- or nanometer-scale fluid flow. In the case of cavity-filling process of nanoimprint lithography(NIL), slip phenomena take place naturally at the solid-to-liquid boundaries, that is, at the mold-to-polymer or polymer-to-substrate boundaries. If the slip or partial slip phenomena are promoted at the boundaries, the processing time of NIL, especially of thermal-NIL which consumes more tact time than that of UV-NIL, can be significantly improved. In this paper it is aimed to elucidate how the cavity-filling process of NIL can be influenced by the slip phenomena at boundaries and to what degree those phenomena increase the process rate. To do so, computational fluid dynamics(CFD) analysis of cavity filling process has been carried out. Also, the effect of mold pattern shape and initial thickness of polymer resist were considered in the analysis, as well.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.93-98
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• 2013

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. To successfully imprint a nanosized pattern with the thermal NIL, the process conditions such as temperature and pressure should be appropriately selected. This starts with a clear understanding of polymer material behavior during the thermal NIL process. In this paper, a filling process of the polymer resist into nanometer scale cavities during the thermal NIL at the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer. In the simulation, the filling process and the residual layer formation are numerically investigated. And the effects of pressure and temperature on NIL process, specially the residual layer formation are discussed.

• Journal of information and communication convergence engineering
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• v.10 no.3
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• pp.295-299
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• 2012

Defect generation during organic bottom anti-reflective coating (BARC) in the photo lithography process is closely related to humidity control in the BARC coating unit. Defects are related to the water component due to the humidity and act as a blocking material for the etching process, resulting in an extreme pattern bridging in the subsequent BARC etching process of the poly etch step. In this paper, the lower limit for the humidity that should be stringently controlled for to prevent defect generation during BARC coating is proposed. Various images of defects are inspected using various inspection tools utilizing optical and electron beams. The mechanism for defect generation only in the specific BARC coating step is analyzed and explained. The BARC defect-induced gate pattern bridging mechanism in the lithography process is also well explained in this paper.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.182-192
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• 2003

A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.6-11
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• 2001

We studied the feasibility of optical lithography for the critical layers of 0.12${\mu}{\textrm}{m}$ DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12${\mu}{\textrm}{m}$ design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.