• Design & Manufacturing
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• 제12권1호
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.131-134
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma po1ymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV]. ranging the dose of 1∼500[${\mu}$C/$\textrm{cm}^2$], the pattern was developed with dry tree and formed by plasma etching. By analysing of the molecule structure using FT-lR, it was confirmed that the thin films of PPMST contains the functional radicals of the MST monomer. The thin films of PPMST had a highly crosslinked structure resulting in a higher molecule weight than the conventional resist.

• 한국공작기계학회논문집
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• 제18권1호
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• pp.68-75
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• 2009

A major disadvantage of thermal nanoimprint lithography(NIL) is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to make the processing temperature lower Accordingly, it is necessary to determine the effects on the processing parameters for thermal NIL at reduced temperatures and to optimize the parameters. This starts with a clear understanding of polymer material behavior during the NIL process. In this work, the squeezing and filling of thin polymer films into nanocavities during the low temperature thermal NIL have been investigated based upon a two-dimensional viscoelastic finite element analysis in order to understand how the process conditions affect a pattern quality; Pressure and initial polymer resist thickness dependency of cavity filling behaviors has been investigated.

• 한국레이저가공학회지
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• 제10권2호
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• pp.17-24
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• 2007

We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

• 한국재료학회지
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• 제23권8호
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• pp.447-452
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• 2013

Recently, products that a have 3-dimensional(3D) micro structure have been in wide use. To fabricate these 3D micro structures, several methods, such as stereo lithography, reflow process, and diffuser lithography, have been used. However, these methods are either very complicated, have limitations in terms of patterns dimensions or need expensive components. To overcome these limitations, we fabricated various 3D micro structures in one step using a pair of diffusers that diffract the incident beam of UV light at wide angles. In the experiment, we used positive photoresist to coat the Si substrate. A pair of diffusers(ground glass diffuser, opal glass diffuser) with Gaussian and Lambertian scattering was placed above the photomask in the passage of UV light in the photolithography equipment. The incident rays of UV light diffracted twice at wider angles while passing through the diffusers. After exposure, the photoresist was developed fabricating the desired 3D micro structure. These micro structures were analyzed using FE-SEM and 3D-profiler data. As a result, this dual diffuser lithography(DDL) technique enabled us to fabricate various microstructures with different dimensions by just changing the combination of diffusers, making this technology an efficient alternative to other complex techniques.

• KSBB Journal
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• 제22권6호
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• pp.433-437
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• 2007

본 연구에서는 나노임프린트 리소그래피를 이용하여 500 nm line, 600 nm pore, $1{\mu}m$ pore, $2.5{\mu}m$ pore의 마이크로 수준에서 나노 수준에 이르는 다양한 크기와 모양의 nanopore 형태 패턴을 제작하였다. Thermal imprint 방식과 달리 상온, 저압에서 임프린팅이 가능하며 사용되는 스탬프의 수명을 늘리고 보다 미세하고 복잡한 형태의 패턴을 제작할 수 있는 UV-assisted imprint 방식을 사용하였다. E-beam lithography로 패턴을 각인한 quartz소재의 스탬프를 사용하였으며 스탬프의 재질이 투명하여 UV 조사시 UV curable resin이 경화될 수 있도록 하였다. 또한 스탬프의 표면을 (heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane의 monolayer 층으로 미리 코팅하여 임프린트 후 스탬프와 기판과의 releasing을 쉽게함과 동시에 패턴의 일부가 스탬프에 묻어 나와 전사된 패턴에 defect가 없도록 하였다. 또한, gold를 미리 증착하여 임프린팅함으로써 lift-off 시에 필요한 hi-layer 층이 필요 없게 되어 산소 플라즈마를 이용한 에칭이 더욱 쉽고 lift-off 공정이 생략될 수 있도록 하였다. 나노임프린트 공정에 있어 가장 큰 문제점은 잔여층의 생성이며 이러한 잔여층을 제거하고자 산소 플라즈마 에칭을 하였다. 에칭공정을 통해 gold의 표면이 완전히 드러났으며 산소 플라즈마를 통해 gold의 표면이 친수성으로 바뀌어 추후 단백질 고정화를 더욱 쉽게 하였다. 그리하여 나노임프린트 기술을 이용해 나노크기의 바이오소자 제작을 가능하게 하였다.

• 공업화학
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• 제16권6호
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• pp.853-856
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• 2005

자성 메모리반도체의 핵심 소자인 magnetic tunnel junction (MTJ) stack에 대한 고밀도 유도결합 플라즈마 반응성 식각이 연구되었다. MTJ stack은 electron(e)-beam lithography 공정을 사용하여 나노미터 크기의 패턴 형성이 되었으며 식각을 위한 하드 마스크(hard mask)로서 TiN 박막이 이용되었다. TiN 박막은 Ar, $Cl_2/Ar$, 그리고 $SF_6/Ar$들의 가스를 사용하여 식각공정이 연구되었다. E-beam lithography로 패턴된 TiN/MTJ stack은 첫 번째 단계로 TiN 하드 마스크가 식각되고 두 번째로 MTJ stack이 식각되어 완성되었다. MTJ stack은 Ar, $Cl_2/Ar$, $BCl_3/Ar$을 이용하여 식각되었으며 각각의 가스농도와 가스 압력을 변화시켜 MTJ stack의 식각특성이 조사되었다.

• 접착 및 계면
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• 제23권4호
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• pp.116-121
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• 2022

Organic field-effect transistor가 실제 전자 장치에 쓰이기 위해서는 유기반도체 용액공정용 미세 패터닝 기술이 요구된다. 본 연구에서는 기존의 스핀 코팅 방법보다 미세 패턴을 형성할 수 있는 소프트 리소그래피 방법이 더 우수한 전기적 특성을 가질 수 있다는 것을 확인하기 위해 비교 분석하였다. Compact Disc 표면의 나노 패턴을 이용하여 유연한 마스터 몰드를 제작하였고, 650 nm 폭의 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) 나노 와이어를 얻었다. 그 결과 소프트 리소그래피 방법을 이용해 제작된 소자 이동도는 0.086 cm²/Vs이며, 스핀 코팅으로 만들어진 소자 이동도는 0.0036 cm²/Vs으로 소프트 리소그래피 방법으로 제작된 소자가 약 20배 이상 높은 이동도와 더 우수한 전기적 성능을 보였다.

• 한국정밀공학회지
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• 제28권2호
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• pp.239-244
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• 2011

Nano Imprint Lithography(NIL) is technique for copying a pattern from stamp with nano size pattern in order to replicated the materials. It is very important to demold in order to make NIL process effectively. Self Assembled Monolayers(SAM) coater is manufactured by means of decreasing surface energy with the stamp surface treatment to improve release characteristics. Manufactured device contains tilting and rotation option for increasing process life time by coating on the sidewall of the pattern in stamp. The stamp coated with optimized tilting angle $30^{\circ}$ and rotation speed of 10rpm has more imprinting cycles than the stamping coated without tilting and rotation. Effective SAM coating on the sidewall of the pattern in stamp will improve by 50% of process life time.

• Journal of the Optical Society of Korea
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• 제6권4호
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.