• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.511-515
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• 2014

The thermodynamic instability of bubbles in wet-foam colloidal suspension is due to the substantial area of their gas/liquid interface. Several physical processes lead to gas diffusion from smaller to larger bubbles, resulting in a coarsening and Ostwald ripening of wet foam. This includes a narrowing of the bubble size distribution. The distribution and microstructure of porous ceramics, the adsorption free energy and Laplace pressure of $Al_2O_3$ particle-stabilized colloidal suspension, and $SiO_2$ content were investigated for tailoring the bubble size. Wet-foam stability of more than 80% is related to the degree of hydrophobicity with contact angles of $62-70^{\circ}$ achieved from the surfactant. The contact angle replaces part of the highly energetic interface and lowers the free energy of the system. This leads to an apparent increase in the surface tension (26-33 mN/m) of the colloidal suspension.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.180-180
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• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• Economic and Environmental Geology
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• v.53 no.1
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• pp.1-9
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• 2020

Magnesium silicate minerals such as serpentine [Mg₃Si₂O₅(OH)₄] have a high potential for the sequestration of CO₂; thus, their reactivity toward dissolution under CO₂-free and CO₂-containing conditions in acidic solvents is a critical process with respect to their carbonation reactions. To examine the carbonation efficiency and dissolution mechanism of serpentine, hydrothermal treatment was performed to the starting material via a modified direct aqueous carbonation process at 100 and 150℃. The serpentine dissolution experiments were conducted in H₂SO₄ solution with concentration range of 0.3-1 M and at a CO₂ partial pressure of 3 MPa. The initial pH of the solution was adjusted to 13 for the carbonation process. Under CO₂-free and CO₂-containing conditions, the carbonation efficiency increased in proportion to the concentration of H₂SO₄ and the reaction temperature. The leaching rate under CO₂-containing conditions was higher than that under CO₂-free conditions. This suggests that shows the presence of CO₂ affects the carbonation reaction. The leaching and carbonation efficiencies at 150℃ in 1 M H₂SO₄ solution under CO₂-containing conditions were 85 and 84%, respectively. The dissolution rate of Mg was higher than that of Si, such that the Mg : Si ratio of the reacted serpentine decreased from the inner part (approximately 1.5) to the outer part (less than 0.1). The resultant silica-rich layer of the reaction product ultimately changed through the Mg-depleted skeletal phase and the pseudo-serpentine phase to the amorphous silica phase. A passivating silica layer was not observed on the outer surface of the reacted serpentine.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korean Chemical Society
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• v.38 no.4
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• pp.309-318
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• 1994

The stable defect structure and the single phase region of La$_2O_3$-modified BaTi$O_3$ have been studied by X-ray diffractometer and scanning electron microscope. The stable defect structure of La$_2O_3$-modified BaTi$O_3$ has been identified as [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$ which consists of La$^{3+}$ ion substitution for Ba$^{3+}$ ion in the lattice structure and the formation of Ti vacancies for the charge compensation. When 3 mol% of La$_2O_3{\cdot}3/2TiO_3$ was added to BaTi$O_3$, the unit cell structure was transformed from tetragonal to cubic and the solubility limit was about 14 mol%. When La$_2O_3{\cdot}3/2TiO_2$ was added above this solubility limit, the second phase, La$_4Ba_2Ti_5O_{18}$, was formed. In the La$_2O_3$-modified BaTi$O_3$, it was found by the liquid phase sintering process that the sinterability was decreased by excess BaO but increased by excess Ti$O_2$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.8-8
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• 2002

TiC core/(Ti,Mo)C rim structure in TiC-$Mo_2C$-Ni base cermet which is generally prepared by sintering below 145$0^{\circ}C$ had been believed to be generated by the solid diffusion of Mo atoms 1 into TiC grains (D. Moskowitz and M.Humenik, 1r.:1966). Afterward, it was clarified that the c core/rim structure is generated by solution/re-precipitation mechanism : (1) $Mo_2C$ grains and s small TiC grains dissolve into the Ni liquid, (2) the dissolved Mo, Ti and C atoms migrate to the s surface of TiC coarse grains, (3) the Mo, Ti and C precipitate on the surface of TiC coarse g grains and form (Ti,Mo)C solid solution rim, and (4) the Ostwald ripening (grain growth by s solution/re-precipitation mechanism) of TiC-core/(Ti,Mo)-rim grains continues, and thus the w width of (Ti,Mo)C rim (at the same time, the grain size) increases with sintering time, etc. ( (H.Suzuki, K.Hayashi and O.Terada: 1973). The TiC-core was found not to disappear even by s sintering at 190$0^{\circ}C$ (ibid.: 1974) Recently, FeSi core/$Fe_2Si_5$-rim structure in Fe-66.7at%Si thermoelectric aIloy was found to also h hardly shrink and disappear by long heating at an appropriate temperature (1999: M.Tajima and K K.hayashD. Then, the authors considered its cause, and clarified experimentaIly that the disappearance of FeSi-core/$Fe_2Ski_5$-rim structure could be attributed to the exhaustion of diffusion-contributable vacancies in core/rim structure (N.Taniguchi and K.Hayashi:2001). At p present, the authors and my coworker are investigating whether the non-disappearance of TiC c core can be explained also from the new hypothesis "Exhaustion of diffusion-contributable v vacancies in corelrim structure".ure".uot;.

• Journal of the Korea Concrete Institute
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• v.23 no.1
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• pp.121-127
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• 2011

In this study, possible use of indigenous natural loess (Hwangtoh) as a new binding material via geopolymerization process is examined. Hwangtoh pastes with four different mix proportions of varying alkali liquid concentrations (6 M, 8 M) and the constituents of the binder as well as the alkali liquid at a constant liquid-to-binder ratio of 0.55 were prepared. Analysis of the natural loess (Hwangtoh) paste was carried out as follows : 1) Measurement of compressive strength and weight of cubic specimens versus curing time; 2) Analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) about reaction product; 3) Porosity analysis of hardened Hwangtoh paste. The result showed that it is possible to prepare Hwangtoh paste with 29.1 MPa at the age of 7 day by using alkali solution (made as 1 : 4.5 the mass ratio of liquefied $Na_2SiO_3$ and NaOH solution and applying the curing temperature of $60^{\circ}C$). Compressive strength development with respect to the degree of moisture evaporation from the paste seems to be independent of curing temperature. Therefore, it seems that higher early strength of the paste specimens cured at higher temperature can be attributed to both higher rate of reaction and moisture evaporation.

• Journal of ILASS-Korea
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• v.8 no.1
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• pp.16-22
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• 2003

Zeta potential measurements of colloid particles suspended in a liquid are performed by a Zeta Meter developed. There are many applications of colloid stability in spray technology, paints, wastewater treatment, and pharmaceuticalse. Zeta potentials of charged particles are obtained by measuring the electrophoretic velocities of the particles using video enhanced microscopy and image analysis program. The values of zeta potential of polystyrene latex(PSL), $silica(SiO_2)$M, polyvinylidence difluoride(PVDF), silicon nitride, and alumina particles in deionized (DI) water were measured to be -40.5, -31.9, -25.2, -15.1 and -10.1mV, respectively. The particles having high zeta potential less than -20 mV are stable in DI water, because the double layers of them have strong repulsive forces mutually, and the particles having low zeta potential over -20mV are unstable due to Van Der Waals forces. Silica(>20nm), PSL, aluminum and PVDF particles were found to be stable that would remain separate and well disperse, while silicon nitride and alumina particles were found to be unstable that would gradually agglomerate in DI water.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.639-647
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• 1998

Al-containing titanium silicalite-1 ([Al]-TS-1) catalyst was prepared hydrothermally, and the effects of synthesis parameters such as silica/alumina sources, $SiO_2/TiO_2$ ratio, and aging treatment were investigated. The structure, crystal size, and shape were examined by XRD and SEM, and the extent of titanium incorporation into the zeolite framework was examined using UV-vis DRS spectroscopy. For [Al]-TS-1 catalyst preparation, aging of ca. 24h was essential, and the faster crystallization rates were achieved with Cab-O-Sil than with Ludox or TEOS as a silica source. In addition, the higher crystallinity and faster crystallization rate were obtained using sodium aluminate as an aluminum source. 2-butanol oxidation using $H_2O_2$ as an oxidant was carried out to confirm the redox property of the [Al]-TS-1. Acid sites catalyzed toluene alkylation study indicated that lattice titanium species in [Al]-TS-1 weakened the acid strength, and the para-ethyltoluene selectivity was enhanced as a results.