• Journal of radiological science and technology
• /
• v.40 no.3
• /
• pp.461-468
• /
• 2017

This study measured and compared the protective clothing using Pb used for shielding in a diagnostic X-ray energy range, and the shielding rates of X-ray fusion shielding materials using Si and $TiO_2$. For the experiment, a pad type shielding with a thickness of 1 mm was prepared by mixing $Si-TiO_2$, and the X-ray shielding rate was compared with 0.5 mmPb plate of The shielding rate of shielding of 0.5 mmPb plate 95.92%, 85.26 % based on the case of no shielding under each 60 kVp, 100 kVp tube voltage condition. When the shielding of $Si-TiO_2$ pad was applied, the shielding rate equal to or greater than 0.5 mmPb plate was obtained at a thickness of 11 mm or more, and the shielding rate of 100% or more was confirmed at a thickness of 13 mm in 60 kVp condition. When the shielding of $Si-TiO_2$ pad was applied, the shielding rate equal to or greater than 0.5 mmPb plate was obtained at a thickness of 17 mm or more, and a shielding rate of 0.5 mmPb plate was observed at a thickness of 23 mm in 100 kVp condition. Through the results of this study, We could confirm the possibility of manufacturing radiation protective materials that does not contain lead hazard using various metalic compound and liquid Si. This study shows that possibility of liquid Si and other metalic compound can harmonize easily. Beside, It is flexible and strong to physical stress than Pb obtained radiation protective closthes. But additional studies are needed to increase the shielding rate and reduce the weight.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.9
• /
• pp.516-522
• /
• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.8
• /
• pp.335-341
• /
• 2003

The composites were fabricated respectively 61vo1.% $\beta$ -SiC and 39vo1.% Ti $B_2$ spray-dried powders with the liquid forming additives of l2wt% $Al_2$ $O_3$＋ $Y_2$ $O_3$ by pressureless annealing at 1$700^{\circ}C$, 175$0^{\circ}C$, 180$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$ -SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and 4.4Mpaㆍ $m^{\frac{1}{2}}$ for composites by pressureless annealing temperature 1$700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 8.09${\times}$10$^{-3}$ ㆍcm for composite by pressureless annealing temperature 1$700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korean Chemical Society
• /
• v.12 no.2
• /
• pp.65-80
• /
• 1968

The physico-chemical properties of nine selected thallium borosilicate glasses and other 21 supplementary compositions were investigated. Their composition-property curves are found to be in many respects analogous to those of other borosilicate glasses containing lithia, soda, and lead oxide. It is indicated that certain minima found in the composition-property curves of thallium borosilicate glasses might be caused by a change in boron coordination as has been observed to occur in the $Na_2O-B_2O_3-SiO_2$ glasses. Typical effects of thallium ions on the borosilicate glass are summarized as follows: 1) Addition of thallium ions increased density, refractive index, water solubility, linear coefficient of thermal expansion, and dielectric constant. 2) Increased concentration of thallium decreased the softening point of the glasses, caused fluorescence under ultraviolet radiation and smeared out the absorption edges up to $15{\mu}$ in the infrared region. An extensive liquid immiscibility was found by replication electron microscope technique in the $Tl_2O-B_2O_3-SiO_2$ system. The immiscibility covers a composition range roughly from 55 wt. % Tl2O to the binary system $B_2O_3-SiO_2.$ By acid treatment, it was found that the immiscible glass consists of separate silica-rich and boron-rich phases.

• Korean Journal of Metals and Materials
• /
• v.49 no.7
• /
• pp.577-582
• /
• 2011

The newly developed ${\alpha}-case$ controlled mold material for Ti investment castings was suggested in this research. The $Al_2O_3$ mold containing interstitial $TiO_2$ and substitutional $Ti_3Al$ was manufactured by the reaction between $Al_2O_3$ and Ti. It is obvious that as the $TiO_2$ and $Ti_3Al$ content in the mold surface were increased, the depth of the interfacial reaction was significantly reduced. In addition, substitutional $Ti_5Si_3$ in the mold surface owing to the reaction between Ti and $SiO_2$ from the binder was effective for ${\alpha}-case$ reduction. Therefore, the ${\alpha}-case$ reduction was accomplished by the diffusion barrier effect of interstitial $TiO_2$, substitutional $Ti_3Al$ and $Ti_5Si_3$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.473-480
• /
• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Applied Chemistry for Engineering
• /
• v.8 no.4
• /
• pp.589-594
• /
• 1997

Superconducting $YBa_2Cu_3O_y$ thin films were prepared at the deposition temperature of $650^{\circ}C$ under oxygen partial pressure of 0.0126 Torr on Si(111) and SrTiO3(100) substrates by chemical vapor deposition technique using $\beta$-diketonates of Y, Ba and Cu as source materials. The thin film fabricated on $SrTiO_3(100)$ had a $T_{c,onset}$ of 91K and $T_{c.0}$ of 87K. The thin film prepared on Si(111) had a $T_{c,onset}$ of 91K but didn't have a $T_{c.0}$ at liquid nitrogen boiling point(77.3K). Dense and two-dimensionally well alligned microstructure was developed for the film deposited on $SrTiO_3(100)$ substrate whereas a relatively porous and randomly distributed microstructure was developed for the film prepared on Si(111) substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.6
• /
• pp.263-270
• /
• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.

• The Korean Journal of Ceramics
• /
• v.3 no.1
• /
• pp.47-51
• /
• 1997

The dense sintered bodies of Si/SiC composite with various Si contents could be fabricated by changing the green density in the forming process. The Si/SiC/graphite composites with various graphite contents could be also fabricated by changing a graphite content in the starting composition. Their mechanical and tribological properties were characterized and wear mechanism was also studided. The hardness and strength of the Si/SiC and the Si/SiC/graphite were decreased with increasing the contents of free Si and graphite, respectively. However, the friction coefficient and specific wear rate had no specific relations to their hardness and strength. Adhesion of free Si was a main factor to determine a wear resistance of the Si/SiC composite. In the case of the Si/SiC/graphite, solid lubricationl and liquid reservoir of the graphite particles played the main role of the reduction of the friction force. In the torque test to estimate the possibility of practical of practical applications, the value of torque between the Al2O3 disk and Si/SiC/graphite disk was 1/6 lower compared with two $Al_2O_3$ disks on the basis of 100,000 cycles.

• Journal of the Korean Ceramic Society
• /
• v.50 no.3
• /
• pp.238-243
• /
• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.