• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.127-134
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• 2011

We investigate the crystallographic orientation and strain states of the Ni/Ag ohmic contacts on p-type GaN. The Ag film in the Ni/Ag contact was severely agglomerated during high temperature annealing in air ambient. As a results, after annealing for 24 h, the Ni/Ag contact shows non-linear I-V curve and low light reflectance of ~21% at 460 nm wavelength. High-resolution X-ray diffraction results show that the interplanar spacing of Ag (111) planes is almost same to that of bilk Ag after annealing for 24 hrs, indicating that the in-plane tensile strain in the Ag film was fully relaxed due to the Ag agglomeration.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9B
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• pp.793-805
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• 2003

In OBS (Optical Burst Switching) networks which decouple the burst from its header, the fault of a fiber link can lead to the failure of all the light-path that traverses the fiber. Because each light-path is expected to operate at a rate of a few Gbps by using WDM (Wavelength Division Multiplexing) technology, any failure may lead to large data loss. Therefore, an efficient recovery scheme must be provided. In this paper, we analyze network utilization and BCP (Burst Control Packet) loss rate according to each link failure by applying the conventional restoration schemes in OBS networks. And through these simulation results, an ASPR scheme is proposed improve the fault management scheme in terms of recovery time and throughput. Finally, We compare the performance of our proposed scheme with that of the conventional one with respect to burst loss rate, resource utilization and throughput by OPNET simulations.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.858-868
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• 1992

0.085Ba(LaS11/2TNbS11/2T)OS13T-0.915Pb(ZrS1yTTiS11-yT)OS13T (0.45$\leq$y$\leq$0.65) transparent electrooptic ceramics were fabricated by two-stage sintering method. The structural, ferroelectric and electrooptic properties were investigated varying composition and second sintering time. Also the possibility of application to electrooptic device was studied. If we increase the PbZrOS13T contents, dielectric constants were increased and Curie temperature was decreased. In the composition of 0.55[mol] PbZrOS13T, electromechanical coupling factor and piezoelectric charge constant were the highest values of 43[%] and 173x10S0-12T[C/N], respectively. Mechanical quality factors were decreased with the increasing PbZrOS13T contents. Light transmittance was increased with wavelength when measured from 300[nm] to 900[nm], and with PbZrOS13T contents in the range of 0.50[mol]-0.65[mol], and had the highest value of 67[%] in the composition of 0.65[mol] PbZrOS13T. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the specimens with compositions of 0.65,0.60,0.55[mol] PbZrOS13T were applicable to electrooptic memory device and those with compositions of 0.50,0.45[mol] PbZrOS13T were applicable to linear electrooptic device.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.113-118
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• 2015

Intravenous (IV) infusion set is one of the most common treatment methods applied to hospitalized patients. However, it is necessary to check the injection of IV solution in order to prevent patients from any possible medical injuries. In this paper, using the optical sensors to detect exhaustion of IV solution was proposed. The optical sensor is coplanar structure composed of LED and photodiode which is installed according to focal distance of the lens. These two elements detect exhaustion of IV solution at the desired point conveniently. Through the results of experiments using various wavelength of LED (R.G.B), the blue LED was selected to the optimum light source. The suggested optical sensor can detect exhaustion of IV solution by the differences in the amount of light which is caused by properties such as total reflection, refractive index and scattering. From the implementation, the detector is applicable to both containers of IV solution, glass bottle and plastic pack. And also the result shows apparent differences according to existence of IV solution even if the IV solution color and illumination were changed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.6
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• pp.4131-4136
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• 2015

This paper compares and calculates more precisely the averaged reflectance of antireflection coating with different structure of single and 6 layer assuming the incident angle of light changing from $8^{\circ}$ to $60^{\circ}$ not like normal incidence as usual case. The reflectivity of AR coating of 6 layers with 180 nm thickness having index profile suggested as linear and quintic function and single layer with same thickness having even index are calculated and compared, when the wavelength of incident light ranges from 400 nm to 1200 nm. As the results the AR coating with 6 layers having quintic(linear) function index profile shows the lower reflectance about 11.6 %(14.6 %) than other index profiles, which is approximately 8 % lower reflectance compared with single layer case(about 19.6 %). This results could be applied for the better antireflection coating design applying to optical devices and filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.381-382
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• 2007

IZO/Ag/IZO (IAI) anode films for flexible organic light emitting diodes (OLEDs) were grown on PC (polycarbonate) substrate using DC sputter (IZO) and thermal evaporator (Ag) systems as a function of Ag thickness. To investigate electrical and optical properties of IAI stacked films, 4-point probe and UV/Vis spectrometer were used, respectively. From a IAI stacked film with 12nm-thick Ag, sheet resistance of $6.9\;{\Omega}/{\square}$ and transmittance of above 82 % at a range of 500-550 nm wavelength were obtained. In addition, structural and surface properties of IAI stacked films were analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscopy), respectively. Moreover, IAI stacked films showed dramatically improved mechanical properties when subjected to bending both as a function of number of cycles to a fixed radius. Finally, OLEDs fabricated on both flexible IAI stacked anode and conventional ITO/Glass were fabricated and, J-V-L characteristics of those OLEDs were compared by Keithley 2400.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.423-423
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• 2007

In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.910-915
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.

• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.539-545
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• 2012

3-(2-benzotriazolovinyl)thiophene (BVT) was synthesized by the connection of the thiophene with the electron-withdrawing group, benzotriazole, through the vinylene. Its structure was confirmed by FT-IR, $^1H$-NMR, $^{13}C$-NMR and 2D hetero-cosy spectroscopy. Both BVT and 3-octylthiophene (OT) were copolymerized and showed an average molecular weight of 12000 (PDI 2.67) and 15000 (PDI 2.55), respectively. The copolymers were dissolved in the organic solvent such as chloroform, THF, TCE, etc. The mole ratios of BVT and OT in the synthesized copolymers were confirmed as 1 : 1.8 and 1 : 2.8 from $^1H$-NMR spectra. The UV-vis maximum absorption of copolymers appeared at the wavelength of 470 nm and 465 nm and the photoluminescence at ${\lambda}_{max}$ = 662 nm and 641 nm correspond to red-orange light. The band gaps of copolymers at 1.96 eV and 2.02 eV were found to be higher than those of poly(3-octylthiophene). The HOMO energy levels of the copolymers decreased overall in comparison with those of poly(3-octylthiophene), but the overall LUMO energy level increased.

• Journal of Advanced Navigation Technology
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• v.17 no.5
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• pp.491-496
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• 2013

In this paper, a half-wavelength folded-slot antenna, which can be applied to RF module for 3G mobile communications by which security lights are monitored and controlled, is proposed. The proposed antenna can be regarded as modified folded-slot structure which has the size reduced to a half of conventional ${\lambda}g$ folded-slot antenna and can be placed at the ground plane edge. In spite of that, the proposed antenna still maintain the advantage of conventional folded-slot antenna that input impedance is close to $50{\Omega}$. The antenna is designed and fabricated within the upper space of $40.5{\times}10mm^2$ on $40.5{\times}62mm^2$ substrate for 3G mobile communication frequency band. The measured impedance bandwidth and antenna gain are 390 MHz and 2 dBi respectively.