Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Emission Characteristics of White Organic Light-Emitting Diodes Using Ultra Wide Band-gap Phosphorescent Material

Ultra Wide Band-gap 인광체를 이용한 백색 OLED의 발광 특성

  • Chun, Hyun-Dong (Department of Advanced Materials Science & Engineering, Daejin University) ;
  • Na, Hyunseok (Department of Advanced Materials Science & Engineering, Daejin University) ;
  • Choo, Dong Chul (Cheorwon Plasma Research Institute) ;
  • Kang, Eu-Seok (Cheorwon Plasma Research Institute) ;
  • Yang, Jae-Woong (Department of Advanced Materials Science & Engineering, Daejin University) ;
  • Ju, Sung-Hoo (Department of Advanced Materials Science & Engineering, Daejin University)
  • 천현동 (대진대학교 신소재공학과) ;
  • 나현석 (대진대학교 신소재공학과) ;
  • 추동철 ((재)철원플라즈마산업기술연구원) ;
  • 강유석 ((재)철원플라즈마산업기술연구원) ;
  • 양재웅 (대진대학교 신소재공학과) ;
  • 주성후 (대진대학교 신소재공학과)
  • Received : 2012.07.31
  • Accepted : 2012.10.24
  • Published : 2012.11.01
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Abstract

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.

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