• Title/Summary/Keyword: light wavelength

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Structure and Function of the Phytochromes: Light Regulation of Plant Growth and Development

  • Park, Chung-Mo;Song, Pill-Soon
    • Journal of Photoscience
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    • v.10 no.1
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    • pp.157-164
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    • 2003
  • Light exerts two primary roles in plant growth and development. Plants acquire all biochemical energy required for growth and propagation solely from light energy via photosynthesis. In addition, light serves as a medium through which plants recognize environmental fluctuations, such as photoperiod and presence of neighboring animals and plants. Plants therefore constantly monitor the direction, intensity, duration, and wavelength of environmental light and integrate these light signals into the intrinsic regulatory programs to achieve an optimized growth in a given light condition. Although light regulates all aspects of plant growth and developmental aspects, the molecular mechanisms and signaling cascades involved have not been well established until recently. However, recent advances in genetic tools and plant transformation techniques greatly facilitated the elucidation of molecular events in plant photomorphogenesis. This mini-review summarizes the gist of recent findings in deetiolation and suppression of shade avoidance response as classic examples of the phytochrome-mediated photomorphogenesis.

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Photochromic Lens development to use Nano particle (1) - Photochromic Lens' estimation method and application - (Nano 입자를 이용한 Photochromic Lens 개발(1) - Photochromic Lens의 평가방법 및 적용 -)

  • Kim, Yong Geun;Seong, Jeong Sub
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.169-174
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    • 2002
  • Make Photochromic lens Photochromism estimation method, and gouge photochromic lens and investigated UV light source to apply. UV light source irradiation ago and after wavelength dependence of photo-transmittance (T%) of darkening and fading state by do optical equipment which is consisted of spectrophotometer, light source, power meter and detecter. Use relative ratio value of maximum $T%{\times}{\lambda}$ area and saturated state area in light off. Dependences estimation introduced darkening efficiency $(K_d)=(1-C_1/A_1)/t_{on}$ relationship value course fading efficiency$(K_f)=(C_2/A_2)/t_{on}$ value during Photochromism's irradiation time in Photochromic lens. Wavelength dependence of transmittance (T%) has form of $T_m+T_1{\exp}[-(x_0-t)/a]$ in Darkening course fading state. Can receive each estimation parameter value as result that apply Photochromism's estimation parameter Z, $K_d$, $K_f$ in Photochromic lens.

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Action of various wavelengths of visible light on U.V.-radiation damage to yeast cells. (효모세포의 자외선조해효과에 대한 각종 파장 광선의 작용)

  • 이민재;이광웅
    • Korean Journal of Microbiology
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    • v.6 no.4
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    • pp.122-130
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    • 1968
  • Action of various wavelengths of visible light on ultraviolet-radiation damage to haploid yeast cells, Saccharomyces cerevisiae 23971, was studied. The results were obtained on the basis of the survival and respiration rates by pre- and post-illuminations of various wavelengths before and after U.V.-irradiations on the yeast cells. Among the wavelengths tested, 635 $m{\mu}$, 429 $m{\mu}$ and white light which caused increase of respiration in pre-treatment alone, induced less resistance to the U. V.-damage than in the control, in both pre- and U.V.-treatment. On the contrary, such wavelengths as 574 $m{\mu}$and 530 $m{\mu}$, showing a weak effect on respiration in pre-treatment increased the susceptability to U.V.-radiation. Photoinactivation was generally obtained by both pre- and post- illuminations along with U.V.-treatment. At 635 $m{\mu}$ the PI rate was the lowest and also a low PI rate was shown at 429 $m{\mu}$. But 429 $m{\mu}$, in the post-treatment of the yeast cells pre-treated by the white light and the darkness respectively, showed the highest PI rate. In both pre- and post- treatment of 574, 530 and 473 $m{\mu}$,the PI rates were high to the same degree. Post-treatments of the wavelengths on U.V.-treated yeasts incubated rather under the white light than the darkness induced lower PI rate. It is assumed that there are great differences in action even of the same wavelength, depending upon the various combination of pre- and post-treatments, and that, moreover, the action of various wavelengths of visible light on U.V.-damage on the cells are concerned with the doses and dose rates of U.V. and visible lights. These observations led to an interpretation that each wavelength of visible light might exert distinctively different effects oil U. V.-damage, mainly causing the inhibition or stimulation of enzymes in the yeast cells.

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Noise Suppression of Spectrum-Sliced WDM-PON Light Sources Using FP-LD

  • Lee, Woo-Ram;Cho, Seung-Hyun;Park, Jae-Dong;Kim, Bong-Kyu;Kim, Byoung-Whi
    • ETRI Journal
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    • v.27 no.3
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    • pp.334-336
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    • 2005
  • We improved the performance of the spectrum-sliced light source for wavelength-division-multiplexed passive optical networks by employing a Fabry-Perot laser diode(FP-LD). We found that the FP-LDs can suppress the intensity noise as significantly as using a gain-saturated semiconductor optical amplifier. The transmission characteristics were measured and analyzed in both conditions with and without employing an FP-LD.

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Dyeing Properties of Polyamide Fabrics Dyed with Onion Shell Extract (양파외피를 이용한 폴리아미드계 섬유의 염색성)

  • 이정은;김호정;이문철
    • Textile Coloration and Finishing
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    • v.13 no.3
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    • pp.165-171
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    • 2001
  • In this study, UV/vis. spectra of color solution extracted from onion shell and dyeing properties of polyamide fibers such as wool, silk, and nylon were investigated. Also, the effect of mordanting on wash fastness and light fastness was Investigated. The amount of colors extracted was increased with extracting temperature and time. The wavelength of maximum absorption of onion shell extract corresponds to flavonol peak and quercetin peak. Also, spectra of color solution were shifted to longer wavelength at higher pH values. It appeared that the optimum condition of the dyeing of wool, nylon, and silk fabrics with onion shell extract was $60^\circ{C}$ , 30min, and pH 4.0 of dyed bath. Surface colors of the dyed fabrics were different according to the used mordants: Al and Cr mordanted fabrics were dyed in yellowish colors, Cu mordanted fabric in greenish color, Sn mordanted fabric in orange color, and Fe mordanted fabric in khaki color. The mordanting was effective at improving wash fastness and light fastness.

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An Amplified WDM-PON Using Broadband Light Source Seeded Optical Sources and a Novel Bidirectional Reach Extender

  • Kang, Byoung-Wook;Kim, Chul-Han
    • Journal of the Optical Society of Korea
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    • v.15 no.3
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    • pp.222-226
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    • 2011
  • We demonstrated the feasibility of an amplified wavelength-division multiplexed passive optical network (WDM-PON) architecture based on broadband light source (BLS) seeded optical sources and a novel bidirectional reach extender. Our bidirectional reach extender could provide an amplification of both downstream and upstream signals as well as a BLS output for the upstream WDM signal generation. An error-free 1.25 Gb/s signal transmission over a 100-km long single-mode fiber was achieved in a bidirectional WDM-PON using BLS seeded reflective semiconductor optical amplifier (RSOA) sources.

Green and Blue Light Emitting InN/GaN Quantum Wells with Nanosize Structures Grown by Metalorganic Chemical Vapor Deposition

  • Kim, Je-Won;Lee, Kyu-Han
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.127-130
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    • 2005
  • The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy and electroluminescence measurements. As the quantum well growth time was changed, the wavelength was varied from 451 to 531 nm. In the varied current conditions, the blue LED with the InN MQW structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN MQW structures do not show the color temperature changes with the variations of applied currents.

Implementation of fiber-optic temperature sensor system base on optical absorption device (광흡수 소자를 이용한 광온도 센서 시스템의 구현)

  • 김영수;김요희
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.9
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    • pp.128-134
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    • 1995
  • A fiber-optic temperature sensor utilizing an optical absorption device (InP) was fabricated. The spectrum of transmitted light through an InP device was obtained at the three temperatures(249 K, 369 K). A stabilized LED(light emmiting diode) driver, photoreceiver, and signal proocessing electronics were designed. An intensity referencing technique was adopted in order to minimize the fluctuation of output signal due to external pertubation of the transmitting optical fiber. The optical absorption edge of the InP device moves to longer wavelength at a rate of 0.42 nm / K, and energy gap of InP is 1.35 eV at room temperature. From these results, it is concluded that the InP device has temperature dynamic range of 300 K with LED of center wavelength of 940nm and spectral width of 50nm. The designed fiber-optic temperature sensor system showed good linearity within the temperature range from -30$^{\circ}C$ to + 150$^{\circ}C$.

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Fabrication of Near-field Scanning Optical Microscope(NSOM) Probe by Chemical Etching (화학적 식각을 이용한 근접장 주사 현미경용 탐침의 제작)

  • Kim, Sung-Chul;Lee, Hyuk
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.555-557
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    • 1995
  • In near field optics, optical fiber probe is smaller than the wavelength of light. This small probe makes it possible to overcome the diffraction limit due to wave property of light. In conventional optical systems, the image resolution is governed by wavelength. But in NSOM, it is determined by probe tip size and probe shape. Therefore probe tip size and shape are very important points in near field optics. In this paper, we will suggest the new fabrication methods of optical fiber probe and show that the probe tip size is sub-micrometer using SEM.

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Correlation Between Deposition Parameters and Photoluminescence of ZnO Semiconducting Thin Films by Pulsed laser Deposition (PLD증착 변수에 따른 II-VI족 화합물 ZnO 반도체 박막의 발광 특성 연구)

  • 배상혁;윤일구;서대식;명재민;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.246-250
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    • 2001
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

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