• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2004년도 Proceedings of 2004 Korea-Japan Joint Seminar on Particle Image Velocimetry
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• pp.119-124
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• 2004

Experimental study was conducted to characterize the flow effect of particle migration in a microchannel which can be used to deliver small amount of liquids, drugs, biological agents and particles in microfluidic devices. Fluorescent particles of $1\{mu}m$ diameter were used to obtain velocity profiles of the fluid in which large particles of $10\{mu}m$ diameter were suspended at different volume fraction of 0.6 and $0.8\%$. Measurements were obtained by using micro-PIV system which contains a Nd:YAG laser with a light of 532-nm wavelength, an inverted epi-fluorescent microscope and a cooled CCD camera to record particle images. The volume fraction of $\phi$ and the particle Reynolds number $Re_p$Rep were used as a parameter to assess the influence of the velocity profile of the suspensions. To expect the slip velocity between the particle and fluids, experiments were carried out at low volume fraction. It was shown that the velocity profile was not influenced by Rep but influenced by the volume fraction, which is in similar trend with the previous study.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• 한국재료학회지
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• 제14권6호
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• pp.399-401
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• 2004

InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

• 한국항공우주학회지
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• 제39권5호
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• pp.451-457
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• 2011

레이저 조사 시 발생되는 플라즈마는 물질에 따라 특정한 파장의 빛을 방출하므로, 이 빛을 수집하여 물질의 구성 성분을 정성 정량적으로 분석할 수 있다. LIBS(Laser-Induced Breakdown Spectroscopy)는 실시간에 가까운 분석과 원거리 검출이 가능하다는 점에서 우주 자원 탐사 기술로 주목받고 있다. 본 연구에서는 달 환경, 즉 고진공 하에서의 성분 분석을 위하여 double-pulse LIBS 기법을 이용하여 LIBS 신호 세기를 크게 증가시켰다. 또한 시편에 레이저가 조사되는 각도를 조절하여 임의 형상 물질의 분석을 모사하였다.

• 한국염색가공학회지
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• 제10권1호
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• pp.1-10
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• 1998

The objectives of this study were to investigate the effects of mordants and dyeing method : on the dyeability and color fastness of the fabrics with the extract from Gardenia. The following results were drawn from the data obtained. 1. The wavelengths of the strongest absolution bands of Amur cork tree, Gardenia extract was 440nm respectively and the wavelengths 440-460nm after the mordants were added in the color extracts(The bands of Gardenia extract shifts to short wavelength side as pH increased.). In all cases, the abosorbancies were increased. 2. The main color substances in extract from Gardenia were expected to be cretin respectively by spectrophotometric and HPLC studies. 3. As to the concentration of color extract for dyeing, about 20g/L was the optimum concentration to dye silk and cotton fabrics with extract. 4. For silk and cotton fabrics dyeing with Gardenia extract, $SnCl_2$ was the best mordants. The K/S values of dyed fabrics were increased gradually as the concentration of mordants increased, and the highest K/S values were obtained at 5-10%. When using the mordanting methods, silk fabric by premordanting and cotton fabric by synmordanting had a greater effect K/S value. 5. The color fastness of fabrics dyed with Gardenia extract against dry cleaning, washing, rubbing and perpiration was improved 1 level or so but light fastness was remained 1 level showing without any effect.

• 한국미생물·생명공학회지
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• 제33권3호
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• pp.222-225
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• 2005

Stimulatory effects of near infra-red (NIR) rays radiation have been studied within the limits of photosynthesis, phototaxis, and photodermatology. While most of these studies have been done by direct NIR radiation, we investigated the effects of the NIR rays-treated materials on microbial growth. NIR in wavelength of 1,400${\~}$1,700 nm was applied for different kind of materials. Under fast growing conditions in rich media, materials treated with the NIR rays or not did not show any differences in growth of microorganisms. However, under slow growing conditions in minimal media, data showed that NIR rays-treated cloths and hygienic bands affect negatively on the growth of bacteria (Salmonella enteritidis) and fungi (Candida albicans). In addition, it was estimated that the effect of NIR rays on bacterial growth is kept going on S. enteritidis.

• 세라미스트
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• 제22권1호
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• pp.36-55
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• 2019

Atomically thin two-dimensional (2D) nanomaterials, including transition metal dichalcogenides (TMDs), graphene, boron nitride, and black phosphorus, have opened up new opportunities for the next generation optoelectronics owing to their unique properties such as high absorbance coefficient, high carrier mobility, tunable band gap, strong light-matter interaction, and flexibility. In this review, photodetectors based on 2D nanomaterials are classified with respect to critical element technology (e.g., active channel, contact, interface, and passivation). We discuss key ideas for improving the performance of the 2D photodetectors. In addition, figure-of-merits (responsivity, detectivity, response speed, and wavelength spectrum range) are compared to evaluate the performance of diverse 2D photodetectors. In order to achieve highly reliable 2D photodetectors, in-depth studies on material synthesis, device structure, and integration process are still essential. We hope that this review article is able to render the inspiration for the breakthrough of the 2D photodetector research field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.74-76
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• 2006

An external electrode fluorescent lamp (EEFL) has an advantage of a long lifetime in the ear1y stages of the study on plasma discharge, interest in the lamp continues. Researches on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, EEFL presented the possibility of using it as a light source for back-lights. However, because EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significant1y affected by frequency. Thus, this study verified the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examined the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.