• 제목/요약/키워드: light sensitivity

검색결과 622건 처리시간 0.023초

A Novel UV-Sensitivity Mutation Induces Nucleotide Excision Repair Phenotype and Shows Epistatic Relationships with UvsF and UvsB Groups in Aspergillus nidulans

  • Baptista, F.;Castro-Prado, M.A.A.
    • Journal of Microbiology
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    • 제39권2호
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    • pp.102-108
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    • 2001
  • DNA damage response has a central role in the maintenance of genomic integrity while mutations in related genes may result in a range of disorders including neoplasic formations. The uvsZl characterized in this report is a navel uvs mutation in Aspergillus nidulans, resulting in a nucleotide excision repair (NER) phenotype: UV-sensitivity before DNA synthesis (quiescent cells), high UV-induced mutation frequency and probable absence of involvement with mitotic and meiotic recombinations. The mutation is recessive and nan-allelic to the previously characterized uvsA101 mutation, also located on the paba-y interval on chromosome I. uvsZl skewed wild-type sensitivity to MMS, which suggests non-involvement of this mutation with BER. Epitasis tests showed that the uvsZ gene product is probably involved in the same repair pathways as UVSB or UVSH proteins. Although mutations in these proteins result in an NER phenotype, UVSB is related with cell cycle control and UVSH is associated with the post-replicational repair pathway. The epistatic interaction among uvsZl and uvsB413 and uvsH77 mutations indicates that different repair systems may be related with the common steps of DNA damage response in Aspergillus nidulans.

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Development and evaluation of a compact gamma camera for radiation monitoring

  • Dong-Hee Han;Seung-Jae Lee;Hak-Jae Lee;Jang-Oh Kim;Kyung-Hwan Jung;Da-Eun Kwon;Cheol-Ha Baek
    • Nuclear Engineering and Technology
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    • 제55권8호
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    • pp.2873-2878
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    • 2023
  • The purpose of this study is to perform radiation monitoring by acquiring gamma images and real-time optical images for 99mTc vial source using charge couple device (CCD) cameras equipped with the proposed compact gamma camera. The compact gamma camera measures 86×65×78.5 mm3 and weighs 934 g. It is equipped with a metal 3D printed diverging collimator manufactured in a 45 field of view (FOV) to detect the location of the source. The circuit's system uses system-on-chip (SoC) and field-programmable-gate-array (FPGA) to establish a good connection between hardware and software. In detection modules, the photodetector (multi-pixel photon counters) is tiled at 8×8 to expand the activation area and improve sensitivity. The gadolinium aluminium gallium garnet (GAGG) measuring 0.5×0.5×3.5 mm3 was arranged in 38×38 arrays. Intrinsic and extrinsic performance tests such as energy spectrum, uniformity, and system sensitivity for other radioisotopes, and sensitivity evaluation at edges within FOV were conducted. The compact gamma camera can be mounted on unmanned equipment such as drones and robots that require miniaturization and light weight, so a wide range of applications in various fields are possible.

Covered Microlens Structure for Quad Color Filter Array of CMOS Image Sensor

  • Jae-Hyeok Hwang;Yunkyung Kim
    • Current Optics and Photonics
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    • 제7권5호
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    • pp.485-495
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    • 2023
  • The pixel size in high-resolution complementary metal-oxide-semiconductor (CMOS) image sensors continues to shrink due to chip size limitations. However, the pixel pitch's miniaturization causes deterioration of optical performance. As one solution, a quad color filter (CF) array with pixel binning has been developed to enhance sensitivity. For high sensitivity, the microlens structure also needs to be optimized as the CF arrays change. In this paper, the covered microlens, which consist of four microlenses covered by one large microlens, are proposed for the quad CF array in the backside illumination pixel structure. To evaluate the optical performance, the suggested microlens structure was simulated from 0.5 ㎛ to 1.0 ㎛ pixels at the center and edge of the sensors. Moreover, all pixel structures were compared with and without in-pixel deep trench isolation (DTI), which works to distribute incident light uniformly into each photodiode. The suggested structure was evaluated with an optical simulation using the finite-difference time-domain method for numerical analysis of the optical characteristics. Compared to the conventional microlens, the suggested microlens show 29.1% and 33.9% maximum enhancement of sensitivity at the center and edge of the sensor, respectively. Therefore, the covered microlens demonstrated the highly sensitive image sensor with a quad CF array.

SENSITIVITY OF SHEAR LOCALIZATION ON PRE-LOCALIZATION DEFORMATION MODE

  • Kim, Kwon--Hee-
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1992년도 춘계학술대회 논문집 92
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    • pp.83-102
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    • 1992
  • As shear localization is observed in different deformation modes, an attempt is made to understand the conditions for shear localization in general deformation modes. Most emphasis in put upon the effects of pre-localization deformation mode on the onset of shear localization and all the other well-recognized effects of subtle constitutive features and imperfection sensitivity studied elsewhere are not investigated here. Rather, an approximate perturbation stability analysis is performed for simplified isotropic rigid-plastic solids subjected to general mode of homogeneous deformation. Shear localization is possible in any deformation mode if the material has strain softening. The incipient rate of shear localization and shear plane orientations are strongly dependent upon the pre-localization deformation mode. Significant strain softening is necessary for shear localization in homogeneous axisymmetric deformation modes while infinitesimal strain softening is necessary for shear localization in plane strain deformation mode. In any deformation mode, there are more than one shear plane orientation. Except for homogeneous axisymmetric deformation modes, there are two possible shear plane orientations with respect to the principal directions of stretching. Some well-known examples are discussed in the light of the current analysis.

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$Ge_1Se_1Te_2$ 비정질 칼코게나이드 물질의 광학적 특성 (Optical Properties of $Ge_1Se_1Te_2$ Amorphous Chalcogenide Materials)

  • 최혁;김현구;조원주;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.83-84
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    • 2006
  • For phase transition method, good recording sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, A retention time is very important part for phase transition. In our presentation wall, we chose Ge-Se-Te material to use a Se material which has good optical sensitivity than Sb. A Ge-Se-Te sample was fabricated and Irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light.

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광섬유 OTDR 센서에 의한 구조물의 변형률 측정 방법 (Structural Strain Measurement Technique Using a Fiber Optic OTDR Sensor)

  • 권일범;김치엽;유정애
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2003년도 봄 학술발표회 논문집
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    • pp.388-399
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    • 2003
  • Light losses in optical fibers are investigated by a fiber optic OTDR (Optical Time Domain Reflectometry) sensor system to develop fiber optic probes for structural strain measurement. The sensing fibers are manufactured 3 kinds of fibers: one is single mode fiber, and second is multimode fiber, and the third is low-cladding-index fiber. Fiber bending tests are performed to determine the strain sensitivity according to the strain of gage length of optical fibers. In the result of this experiments, the strain sensitivity of the single mode fiber was shown the highest value than others. The fiber optic strain probe was manufactured to verify the feasibility of the structural strain measurement. In this test, the fiber optic strain probe of the OTDR sensor could be easily made by the single mode fiber.

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Photo-sensing Characteristics of VO2 Nanowires

  • Sohn, Ahrum;Kim, Eunah;Kim, Haeri;Kim, Dong-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.197.1-197.1
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    • 2014
  • VO2 has intensively investigated for several decades due to its interesting physical properties, including metal-insulator transition (MIT), thermochromic and thermoelectric properties, near the room temperature. And also gas and photo sensing properties of VO2 nanowires have attracted increasing research interest due to the high sensitivity and multi-sensing capability. We studied the light-induced resistance change of VO2 nanowires. In particular, we have investigated plasmonic enhancement of the photo-sensing properties of the VO2 nanowires. To select proper wavelength, we performed finite-difference time-domain simulations of electric field distribution in the VO2 nanowires attached with Ag nanoparticles. Localized surface plasmon resonance (LSPR) is expected at wavelength of 560 nm. The photo-sensitivity was carefully examined as a function of the sample temperature. In the presentation, we will discuss physical origins of the photo-induced resistance change in VO2.

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CAE를 응용한 차체강성 최적화에 관한 연구 (An Study of Optimization on Vehicle Body Stiffness using CAE Application)

  • 최명진;송명준;장승호
    • 한국자동차공학회논문집
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    • 제9권6호
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    • pp.129-134
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    • 2001
  • One of the most important purposes in the design of machines and structures is to produce the most light products of the lowest price with satisfying function and performance. In this study, a scheme of design optimization for the weight down of vehicle body structure is presented. Design sensitivity of vehicle body structure is investigated and design optimization is performed to get weight down with the allowable stiffness of body in white. Stress, deformation and natural frequencies are the constraint of the optimization.

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Ag/ 비정질/As2S3경계면에서의 광도핑 특성 (The Properties of Photodoping on the Interface Ag/Amorphous As2S3)

  • 이영종;문동찬;정홍배
    • 대한전기학회논문지
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    • 제35권8호
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    • pp.316-322
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    • 1986
  • In this paper, the photodoping effect on the interface of Ag-amorphous As2S3 thin film has been investigated by measuring the resistance change of the Ag layer, the absorption coefficient of the As2S3, the optical density of As2S3 layer and the short-circuit photocurrents under light irradiation. As the experimental results, the photodissolution rate and the photodiffusion rate depends on the magnitude of photon energy absorbed in the As2S3. The sensitivity limit of the photodissolution rate at Ag layer was about 630[nm] and the sensitivity limit of the photodiffusion rate at the Ag-As2S3 interface was about 680[nm]. Also, it was found that the depth of photodiffusion was proportional to the square root of exposing time.

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환경모니터링 센서가 집적된 LED 조명용 광학시트 제작 (Fabrication of Optical Sheet for LED Lighting with Integrated Environment Monitoring Sensors)

  • 최용준;이영태
    • 반도체디스플레이기술학회지
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    • 제12권3호
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    • pp.35-39
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    • 2013
  • In this paper, we developed an optical sheet for LED lighting with integrated $CO_2$ gas and temperature sensor which can monitor at the indoor environment. The optical sheet for LED lighting is fabricated through PMMA(Polymethyl methacrylate) injection process using mold. This research enables to fabricate the reflective sheet, light-guide plate and the prism sheet in a optical sheet. The fabricated sheet demonstrates higher intensity of optical efficiency compared with single-sided sheets. The $CO_2$ sensor was fabricated using NDIR(NON-Dispersive Infrared) method and it has $0.0235mV/V{\cdot}PPM$ sensitivity. The temperature sensor was fabricated using RTD(Resistance temperature detector) method and it has $0.563{\Omega}/^{\circ}C $sensitivity.