• 한국광학회지
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• 제29권6호
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• pp.262-267
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• 2018

본 논문에서는 유기발광다이오드 디스플레이(OLED)의 광 효율을 향상시키기 위해 방사방지필름을 새롭게 디자인하였다. 현재 상용화되고 있는 편광판의 편광도와 투과율을 변화시켜 OLED 반사방지필름에 사용하였을 경우 정면과 측면방향의 반사특성을 계산하였다. 그 결과 편광도가 99.995%나 99.990%인 상용화된 편광판의 편광도를 99.9% 수준으로 떨어뜨릴 경우, 반사방지필름의 평균 시감반사율은 사람의 눈으로 알아차리기 힘든 약 0.1% (증가율 환산 2.5%) 상승한 반면, 투과율은 기존보다 약 1.63~3.34%(증가율 환산 4.2~8.2%) 상승하였다. 이 결과는 기존 OLED에서 저반사율을 유지하면서 광효율을 상승시킬 수 있는 광학설계 조건을 제시하였다.

• 한국광학회지
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• 제16권2호
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• pp.138-142
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• 2005

본 논문에서는 하나의 얇은 반파장판(half-wave plate)을 이용하여 광섬유-평면도파로 결합기(fiber-to-planar waveguide coupler)의 편광 의존성을 줄이기 위한 방법이 제안되었고 실험적으로 검증되었다. 소자의 편광의존성 제거 원리를 설명하였고 제조과정을 기술하였다. 실험 결과는 소자의 공진 파장이 입력광의 편광상태에 독립적임을 보였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1597-1600
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• 2005

Recently, the trends of TFT-LCD are large scale and thin thickness, so, the demands of Light Guide Panel(LGP) which is able to substitute for prism sheets are appeared. Functions of LGP obtaining polarization of light of the prism sheet as well as the incidence and reflection of light are demanded. This prismless type LGP to complete functions of the existing LGP and polarization at once must be supported by micro machining technology of LGP surface. In this research, we have used the STAMPER method for the mass product and In-Line process, and the optimized conditions are established by analyzing the cutting force and conditions according to the material and processing properties when the prismless type LGP mold is fabricated. Parameters of the cutting condition were the workpiece and cutting depth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.293-294
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• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.74-75
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• 2006

We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• 한국광학회지
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• 제23권6호
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• pp.264-268
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• 2012

본 논문에서는 파장분할 다중방식의 수동형 광 가입자망(WDM-PON: Wavelength Division Multiplexing - Passive Optical Network)에서 매우 구조가 간단하고 저비용으로 구현 가능한 방송신호 전송 방법을 제안한다. 이는 하나의 광대역 증폭된 자발 광원(Amplified Spontaneous Emission: ASE)과 편광 독립 반사형 반도체 광 증폭기(Polarization Independent-Reflective Semiconductor Optical Amplifier: PI-RSOA) 만으로 구현이 가능하기 때문이다. 채널당 1.25 Gb/s 속도에서 24개의 가입자 채널에 대해 30 Km 이상의 방송 신호 전송 시, 무오류(error-free) 성능을 갖는 것을 실험적으로 증명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.18-18
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• 2009

최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.567-567
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• 2013

Surface plasmon resonance is the enhancement of electromagnetic wave caused by oscillation on the metal and dielectric interfaces. Surface plasmons with nanohole arrays provides an enhancedresonance for the specific wavelengths of interests. Asymmetric array of nanoscale structures can enable orientation dependent shift of resonance wavelengths when combined with the control of polarization for incident visible light, thus providing color tunability. Appropriate lattice constants along the direction of polarization in rectangular nanohole arrays can determine the resonance condition generating red (R), green (G), and blue (B) colors and potentially be applied to display applications. In ourprevious report, we have optimized the ion beam nanomachining conditions to fabricate the nanostructures on the metal film. We apply the fabrication conditions to make nanoscale hole arrays using 100 nm thick gold layer on the glass substrate with the optimal design of periodicities along x, y, and diagonal directions of a=440 nm, b=520 nm, c=682 nm, and the hole diameter of d=200 nm. Using the reflective light in dark field mode of optical microscope, we can observe different colors. When the polarizer is paralleled along a, b, or c direction, the represented color is changed to R, G, and B, respectively. We further map the color using i1 to correlate the conditions of the nanohole arrays with their characteristic color.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.17-17
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• 1998

Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.