• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.108-112
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• 2002

A new pixel driving method for organic light-emitting diode (OLED) flat-panel display (FPD) is proposed. The new charge-pump passive-matrix pixel driver consists only of a storage capacitance and a rectifying diode, and no thin-film transistor (TFT) is needed. The new driver not only supplies a constant current to the OLED throughout the whole period of panel scanning like an active-matrix driver, but also provides a highly linear gray-scale control through a pure digital manner.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.22-23
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• 2006

A new current-driving pixel circuit for active-matrix organic light-emitting diodes (AMOLEDs), composed of four organic thin-film transistors (OTFTs) and one capacitor, is proposed using a current scaling method. Designing pixel circuits with OTFTs has many problems due to the instability of the OTFT parameters with still unknown characteristics of the material. Despite the problems in using OTFTs to drive the pixel circuit, our work could be set as a goal for future OTFT development. The simulation results show enhanced linearity between input data and OLEO luminescence at low current levels as well as successfully compensating the variation of the OTFTs, such as the threshold voltage and mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.26-29
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• 2008

In the fields of electronics and displays where inkjet printing has demonstrated its capability to fabricate colorant subpixels of thin film transistor liquid crystal(TFT LCD) color filters and organic light emitting diode (OLED) displays, conducting tracks and TFTs, the production of satellite droplets is one of primary things to eliminate because they generally deteriorate the pattern quality. To understand the production mechanism of satellite droplets in this paper, driving waveforms such as monopolar and bipolar were employed and the influence of the pulse duration time were investigated in both experimental and numerical aspects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.582-582
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• 2013

Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

• ETRI Journal
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• 제30권2호
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• pp.308-314
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• 2008

In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.119-122
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• 2008

In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 진공이야기
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• 제1권2호
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• pp.24-29
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• 2014

Display is a key component in electronic devices. OLED is growing very fast recently due to the explosion of the smart phone market although still LCD is the dominating display technology in the display market at the moment. Also needs for the large area and high resolution TVs and flexible displays are increasing these days. Especially flexible display is expected to be one of the key technologies in mobile devices requiring small device size and large display size. Contrary to the conventional displays, flexible display requires organic materials for the substrate, the active driving element and also for the display element. Plastic film as a substrate, organic semiconductor as an active component of the transistor and organic light emitting materials or electronic paper as a display element are studied actively. In this article, mainly backplane technologies such as substrates and the transistor materials for flexible display will be introduced.

• 대한전자공학회논문지SD
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• 제42권12호
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• pp.13-18
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• 2005

본 논문에서는 Poly-ethylene-terephthalate (PET) 기판 위에 Organic Thin Film Transistor (OTFT)와 Organic Light Emitting Diode (OLED)를 직렬 연결시킨 픽셀과 64 x 64 픽셀로 구성된 어레이를 제작하여 동작을 시연하였다. OTFT는 PET 기판과의 호환성을 고려하여 Poly 4-vinylphenol을 게이트 절연체로, 펜타센을 활성층으로 사용하여 제작되었다. 개별 소자 수준에서는 이동도가 $1.0\;cm^2/V{\cdot}sec$로 나타났으나, 어레이에서는 $0.1\~0.2\;cm^2/V{\cdot}sec$로 약 10배 정도 감소하였다. 어레이의 동작을 분석하였고 OTFT의 OLED에 대한 전류구동능력을 확인하였다.