• Title/Summary/Keyword: light emitting

Search Result 3,061, Processing Time 0.032 seconds

Development of Blue Organic Light-emitting Diodes(OLEDs) Due to Change in Mixed Ratio of HTL:EML(DPVBi:NPB) Layers (HTL:EML(DPVBi:NPB)층의 조성비 변화에 따른 청색 유기 발광 소자 개발)

  • Lee, Tae-Sung;Lee, Byoung-Wook;Hong, Chin-Soo;Kim, Chang-Kyo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.9
    • /
    • pp.853-858
    • /
    • 2008
  • The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

2D Slab Silicon Photonic Crystal for Enhancement of Light Emission in Visible Wavelengths

  • Cui, Yonghao;Lee, Jeong-Bong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.887-890
    • /
    • 2008
  • We present 2D slab silicon-based photonic crystal optical insulator to enhance light emission efficiency of light-emitting diode (LED). A 2D slab silicon photonic crystal is designed in such a way that light emitting diode die can be placed in the middle of the silicon photonic crystal. The device creates light propagation forbidden region in horizontal plane for Transverse Electric (TE) light with the wavelength range of 450 nm to 600 nm.

  • PDF

Growth of Ulva pertusa Kjellman (Chlorophyta, Ulvophyceae) by a Light-Emitting Diode (LED) Light Source (발광다이오드(LED) 조명을 이용한 녹조 구멍갈파래(Ulva pertusa)의 생장)

  • Kwon, Chun Jung;Choi, Chang Geun
    • Korean Journal of Fisheries and Aquatic Sciences
    • /
    • v.46 no.5
    • /
    • pp.571-574
    • /
    • 2013
  • To determine an efficient growth system for algal cultivation and to develop adequate culture system utilizing LED light, we investigated the effects of fluorescent and light emitting diode (LED) light source on the growth of Ulva pertusa. U. pertusa was cultured at $17^{\circ}C$ under a light intensity of 35 ${\mu}mol$ photons $m^{-2}s^{-1}$ and a 10L:14D photoperiod using either fluorescent or LED lamps. After 1 week of incubation under the same environmental condition, the length and width of Ulva pertusa grown under LED light were 1.5- and 1.9-fold greater, respectively, than the length and width of algae grown under fluorescent light. After two weeks, length and width were 2.6- and 2.0-fold greater, respectively, in algae grown under LED light. Total length and width of Ulva pertusa after three weeks of incubation were 1.7- and 1.2-fold greater in algae grown under LED light than those grown under fluorescent light. Therefore, the LED light induced significantly higher growth of Ulva pertusa than fluorescent light.

Analysis to the Visual Expression Types and Characteristics of New Materials Utilizing the Lighting (조명을 활용한 신소재의 시각적 표현유형 및 특성분석)

  • Jung, Sun-Hee;Seo, Ji-Eun
    • Korean Institute of Interior Design Journal
    • /
    • v.23 no.5
    • /
    • pp.25-32
    • /
    • 2014
  • The purpose of this study is to analyze the expression method and visual characteristics of material utilized the lighting in terms of a visual aspect. The method of study is to establish standards for analysis and to classify type of visual effect and expression of that focused on preliminary study. And It is to grasp the visual expression characteristics of new materials. through analysis standards. The results of the study are as follows. First, 'decorativeness', 'symbolization', 'motion-images' and 'interactivity' were selected as the type of visual expression through the precedent studies. And it was classified the visual effects as 3 types like 'a light-emitting effect', 'steric effects' and 'movement effect'. Second, We could know that 'light-emitting effect' was expressed in 7-new materials, 'three-dimensional effect' was expressed in 3-new materials, and 'motion effect' in 4-new materials. Through that. We could know that the new materials represented with 'light-emitting effect' are much more than the other new materials. Third, the results of this study show that 'decorativeness' in the visual types was appeared to 'light-emitting effect' and 'three-dimensional effect'. 'symbolization' to 'light-emitting effect' and 'motion effect', 'motion-images' to 'three-dimensional effect' and 'motion effect' and 'interactivity' to 'light-emitting effect', 'three-dimensional effect' and 'motion effect'. And It was appeared to three effects in 'interactivity'. We could know that it is more effective to be presented the visual effect simultaneously to communication with the visual perception.

Polymer Light-Emitting Diodes Based on Poly(3-hexyl thiophene)

  • Chang, Seoul;Kim, Nam-Hee
    • Fibers and Polymers
    • /
    • v.1 no.1
    • /
    • pp.25-31
    • /
    • 2000
  • Poly(3-hexyl thiophene)(P3HT) and poly(3-dodecyl thiophene)(P3DT) were polymerized by oxidative coupling with ferric chloride. The P3HT light-emitting device emitted red light and it could be observable in the ordinary indoor light. The device had the turn-on electric field of about 3$\times$$10^7$ V/m. The maximum electroluminescene (EL) intensity was obtained when the thickness of polymer layer was about 130 nm in IT0/P3HT/Al device. The maximum external quantum yield was 0.002%. The maximum luminance was 21 cd/$m^2$. The EL intensity decreases with increasing the crystallinity of the polymer layer. By using the oriented poly(3-alkyl thiophene)(PAT) layer as an electroluminescent layer in the ITO/polymer/Al light-emitting devices, the polarized EL light emission was observed. The EL intensity ratio of parallel to perpendicular direction to the stretch direction for P3HT was about 1.40.

  • PDF

The study on the characteristics of organic light emitting devices using Ir (Ir 착화합물을 이용한 유기발광소자의 특성연구)

  • 김준호;표상우;정래영;하윤경;김영관;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.214-217
    • /
    • 2002
  • The internal quantum efficiency of organic light emitting devices(OLEDs) using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in OLEDs. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer OLEDs with phosphorescent emitter, Iridium complexes were prepared. The devices with a structure of ITO/TPD/Ir complex doped in the host material/Alq3/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. Using various Ir complexes and the host materials, we fabricated several devices and investigated the device characteristics.

  • PDF

Transparent Conducting Zinc-Tin-Oxide Layer for Application to Blue Light Emitting-diode

  • Kim, Do-Hyeon;Kim, Gi-Yong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.346.2-346.2
    • /
    • 2014
  • To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

  • PDF

Electroluminescent Devices Using a Polymer of Regulated Conjugation Length and a Polymer Blend

  • Zyung, Tae-Hyoung;Jung, Sang-Don
    • ETRI Journal
    • /
    • v.18 no.3
    • /
    • pp.181-193
    • /
    • 1996
  • A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

  • PDF

A Study on Electric Characteristics of Multi-layer by Light Organic Emitting Diode (유기발광소자(Organic Light Emitting Diode)의 다층박막에 대한 전기적 특성 연구)

  • Lee Jung-Ho
    • Journal of Korea Society of Industrial Information Systems
    • /
    • v.10 no.2
    • /
    • pp.76-81
    • /
    • 2005
  • This research approached electrical characteristics of organic light emitting diodes getting into the spotlight by next generation display device. Basic mechanism of OLED's emitting is known as that electron by cathode of lower work function and hole by anode of higher work function are driven and recombine exciton-state being flowed in emitting material layer passing carrier transport layer In order to make many electron-hole pairs, we must manufacture device in multi-layer structure. There are Carrier Injection Layer(CIL), Carrier Transport Layer(CTL) and Emitting Material Layer(EML) in multi-layer structure. It is important that regulate thickness of layer for high luminescence efficiency and set mobility of hole and electron.

  • PDF

Effect of Thermal Annealing on Nanoscale Thickness and Roughness Control of Gravure Printed Organic Light Emitting for OLED with PVK and $Ir(ppy)_3$

  • Lee, Hye-Mi;Kim, A-Ran;Kim, Dae-Kyoung;Cho, Sung-Min;Chae, Hee-Yeop
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.1511-1514
    • /
    • 2009
  • Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

  • PDF