• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.31 no.1 s.256
• /
• pp.11-17
• /
• 2007

In this paper, we present a design, analysis, fabrication and performance test of the novel DoD metal-jet system for application to the high-density and high-temperature-melting materials. The theoretical analysis of the metal-jet nozzle system is derived by using electro-mechanical analogy. Based on the theoretical analysis results, we design the metal-jet print head system and fabricate the metal-jet system, which can eject the droplet of lead-free metal solder in high-temperature. In the experimental test, we set up the test apparatus for visualization of the droplet ejection and measure the ejected droplet volume and velocity. As a result, the diameter, volume and the velocity of the ejected droplet are about 65 $\mu$m $\sim$ 70 $\mu$m, 145p1 $\sim$ 180 pl and 4m/s, which shows quite good agreement with the theoretical analysis results of the 75 $\mu$m-diameter and 220 pl-volume of droplet. In comparison with the experimental result, the errors of diameter and volume are 7% $\sim$ 13% and 18 $\sim$ 34%, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.110-113
• /
• 2003

여러가지 Sn-Ag-Cu 솔더조성과 솔더링 후의 냉각속도에 따라 솔더링 접합부에서의 계면 미세조직의 다양한 변화를 관찰해 보았다. 현재까지 Sn-Ag-Cu 3원계 공정점에 대한 정확한 연구가 미흡하고, 상용으로 제품화되고 있는 Sn-Ag-Cu 합금계는 3원계 공정조성에서 약간 벗어난 조성들을 선택하고 있다고 할 수 있다. 따라서, 본 연구에서 사용한 Sn-Ag-Cu 합금 조성은 Sn-3.5Ag, Sn-3Ag-0.7Cu, Sn-3Ag-1.5Cu, Sn-3.7Ag-0.9Cu, Sn-6Ag-0.5Cu로 선택하였으며, 각 조성에서 Lap Shear Joint를 제조하였다. 사용한 Solder pad는 Cu pad와 Cu pad 위에 Au/Ni를 plating한 것을 이용하였다. 리플로우 솔더링 조건은 $250^{\circ}C$ 이상의 온도에서 60초 실시하였으며, 리플로우 솔더링 후의 냉각속도를 달리하여 냉각시켰다. 솔더링 후의 냉각속도가 느려질수록 계면 금속간화합물(IMC)의 두께가 더욱 증가하며, 조대화되었다. 또한 솔더 조성의 영향에서 Cu와 Ag의 함량이 높을수록 계면 IMC의 두께가 증가되었으며, 이는 솔더내부에 형성된 IMC 입자들이 조대화되어 계면 IMC층에 결합되어 나타났기 때문이다.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.55-59
• /
• 1999

One of lead free glass, Bi based solder glass is investigated for electronic packaging application. The melting temperature of glass about $550^{\circ}C$ at Bi based glass (70wt% $B_2O_3$ + l5wt%$B_2O_3$ + 8wt% $SiO_2$ + 2wt% $P_2O_5$ + 4wt% $A1_2O_3$ +lwt% ZnO) and varied with $P_2O_5$ content in this system. Crystallized glasses were obtainded after 1hr heat teratment at $450^{\circ}C$ with 10wt% of $P_2O_5$ addition. Much higher melting temperature was observed at $B_2O_3$ rich composition area.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.4
• /
• pp.39-46
• /
• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.2 s.35
• /
• pp.167-174
• /
• 2005

Smaller size and higher integration of electronic components make smaller gap between metal conducting layers in electronic package. Under harsh environmental conditions (high temperature/humidity), electronic component respond to applied voltages by electrochemically ionization of metal and metal filament formation, which lead to short failure and this phenomenon is termed electrochemical migration(ECM). In this work, printed circuit board(PCB) is used for determination of ECM characteristics. Copper leads of PCB are soldered by eutectic solder alloys. Insulation breakdown time is measured at $85^{\circ}C,\;85{\%}RH$. CAF is the main mechanism of ECM at PCB. Pb is more susceptible to CAF rather than Sn, which corresponds well to the corrosion resistance of solder materials in aqueous environment. Polarization tests in chloride or chloride-free solutions fur pure metal and eutectic solder alloys are performed to understand ECM characteristics. Lifetime results show well defined log-normal distribution which resulted in biased voltage factor(n=2) by voltage scaling. Details on migration mechanism and lifetime statistics will be presented and discussed.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.3
• /
• pp.31-36
• /
• 2012

In this study, the complex vibration reliability of Sn-3.5Ag and Sn-0.7Cu having a high melting temperature was investigated. For manufacturing of BGA test samples, Sn-3.5Ag and Sn-0.7Cu balls were joined on BGA chips finished by ENIG and the chips were mounted on PCB finished OSP by using reflow process. For measuring of resistance change during complex vibration test, daisy chain was formed in the test board. From the results of resistance change and shear strength change, the reliability of two solder balls was compared and evaluated. During complex vibration for 120 hours, Sn-0.7Cu solder was more stable than Sn-3.5Ag solder in complex vibration test.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.4
• /
• pp.11-17
• /
• 2010

The electromigration phenomenon in lead-free flip-chip solder joint has been one of the serious problems. To understand the mechanism of this phenomenon, the crystallographic orientation of Sn grain in the Sn-Ag-Cu solder bump has been analyzed. Different time to failure and different microstructural changes were observed in the all test vehicle and bumps, respectively. Fast failure and serious dissolution of Cu electrode was observed when the c-axis of Sn grain parallel to electron flow. On the contrary of this, slight microstructural changes were observed when the c-axis of Sn perpendicular to electron flow. In addition, underfill could enhance the electromigration reliability to prevent the deformation of solder bump during EM test.

• Proceedings of the KWS Conference
• /
• 2009.11a
• /
• pp.76-76
• /
• 2009

눈부신 전자산업의 발달로 대부분의 전자제품이 다기능/경박단소화 되고 있어, 고밀도 실장 기술인 양면 표면실장과 고집적 패키징 기술인 패키지 적층 공정의 적용이 점차 확대되고 있다. 따라서 양면 표면실장 및 패키지 적층 공정에 사용되는 저온 접합용 무연 솔더 즉, $183^{\circ}C$(Sn-37Pb 공정 솔더 융점) 이하의 융점을 가지는 저온 무연 솔더에 대한 관심이 높아지고 있다. 한편, 미세피치 적용 분야에 있어 ACF/P를 이용한 COG 접속 분야 외에도 최근 저온 접합용 무연 솔더를 이용한 접속 분야가 각광을 받고 있다. 따라서, 접속피치 미세화에 대응하기 위해 스크린 인쇄성을 향상시킬 수 있는 저온 무연 솔더 paste 제조 및 공정 기술의 개발이 필요한 실정이다. 현재 대표적인 저온 무연 솔더 조성은 Sn-Bi계($138^{\circ}C$ 융점)와 Sn-In계($120^{\circ}C$ 융점)이다. 하지만, 이들 조성의 신뢰성 등에 있어 개선의 여지가 있으므로 이를 해결하기 위한 무연솔더 조성의 개발이 필요하다. 이와 같은 관점에서, 본 연구는 $137^{\circ}C$의 융점을 갖는 Sn-57.6Ag-0.4Ag 저온 무연 솔더 paste를 $217^{\circ}C$의 융점을 갖는 Sn-3.0Ag-0.5Cu 솔더 paste와 비교하여 인쇄성, reflow 특성, void inspection, 미세조직 관찰 및 underfill 적용 등의 실험을 실시하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.35-40
• /
• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.3
• /
• pp.29-35
• /
• 2003

The Sn-based lead-free solders with varying microstructure were prepared by changing the cooling rate from the melt. Bulky as-cast SnAg, SnAgCu, and SnCu, alloys were cold rolled and thermally stabilized before the creep tests so that there would be very small amount of microstructural change during creep (TS), and thin specimens were water quenched from the melt (WQ) to simulate microstructures of the as-reflowed solders in flip chips. Cooling rates of the WQ specimens were 140∼150 K/sec, and the resultant $\beta-Sn$ globule size was 5∼10 times smaller than that of the TS specimens. Subsequent creep tests showed that the minimum strain rate of TS specimens was about $10_2$ times higher than that of the WQ specimens. Fractographic analyses showed that creep rupture of the TS-SnAgCu specimens occurred by the nucleation of voids on the $Ag_3Sn$ Sn or $Cu_6Sn_5$ particles in the matrix, their subsequent growth by the power-law creep, and inter-linkage of microcracks to form macrocracks which led to the fast failure. On the other hand, no creep voids were found in the WQ specimens due to the mode III shear rupture coming from the thin specimens geometry.