• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.4
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• pp.422-429
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• 1988

The photoconductive multilayer of Se-As(hole blocking layer)/Se-As-Te (photoconductive layer) /Se-As (layer for supporiting hole transport)/Se-As(layer or controlling total capacitance)/Sb2S3(electron blocking layer) was fabricated and its electrical and optical properties were investigated. The photoconductive multilayer is made of evaporated a-Se as the base material, doped with As and Te to prevent the crystallization of a-Se and to enhance red sensitivity, respectively. The multilayer with good image reproducibility has the following deposition condition. The first layer has the thickness of 250\ulcornerat the deposition rate of 250\ulcornersec. The second layer has the thickness of 800\ulcornerat the deposition rate of 250\ulcornersec. The third layer has the thickness of 125\ulcornerat the deposition rate of 250\ulcornersec. The fourth layer has the thickness of 1700\ulcornerunder the Ar gas ambient of 50x10**-3torr. The image pick-up tube, employing this multilayer demonstrates the following characteristics. The photosensitivity is 0.8, the resolution limit is above 300TV line, and the decay lag is about 7%. And spectral response convers the whole visible range. Therfore the application to color TV camera is expected.

• Atmosphere
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• v.19 no.4
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• pp.331-344
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• 2009

A sensitivity study has been performed using ARPS (Advanced Regional Prediction System) version 5.2.10 in a downslope windstorm case of 12-13 February 2006. The purpose of this study was to find out the role of the inversion layer of temperature mainly in relation to the strength of the downslope winds over the Yeongdong region located downstream of the Taebaek mountains. Under the conditions of N (Brunt-$V{\ddot{a}}is{\ddot{a}}la$ frequency)=0.008 and N=0.016, the effects of the presence of the inversion layer, its variation of height of the layer, and the depth of the layer were identified. The sensitivity experiments suggested that the inversion layer effected the downstream wind speed of the mountains under both conditions of N=0.008 and N=0.016, and notably when the inversion layer was located near the mountain crest the downstream wind speed of the mountains was strong (~ $27ms^{-1}$) only under the condition of N=0.016. In addition, when the atmosphere was rather stable (N=0.016) and the depth of the layer was relatively thin (765 m) the downstream wind speed of the mountains was the strongest (~ $30ms^{-1}$) among the sensitivity experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.23-26
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• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Progress in Superconductivity and Cryogenics
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• v.12 no.1
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• pp.1-5
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• 2010

Silver stabilizing layer of coated conductor has been prepared by dip coating method using organic silver complexes containing 10 wt% silver as a starting material. Coated silver complex layer was dried in situ with hot air and converted to crystalline silver by post heat treatment in flowing oxygen atmosphere. A dense continuous silver layer with good surface coverage and proper thickness of 230 nm is obtained by multiple dip coatings and heat treatments. The film heat treated at $500^{\circ}C$ showed good mechanical adhesion and crystallographic property. The interface resistivity between superconducting YBCO layer and silver layer prepared by dip coating was measured as $0.67\;{\times}\;10^{-13}\;{\Omega}m^2$. Additional protecting copper layer with the thickness of $20\;{\mu}m$ was successfully deposited by electroplating. The critical current measured with the specimen prepared by dip coating and sputtering on same quality YBCO layer showed similar value of ~140 A and proved its ability to replace sputtering method for industrial production of coated conductor.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.355-356
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• 2013

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.51-51
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• 2005

• Journal of the Korean Society of Environmental Restoration Technology
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• v.11 no.6
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• pp.120-129
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• 2008

Removal rate of $NO_3-N$ and TN in a free water surface wetland system with litter layer on its bottom was compared with that without one. The system was established on floodplain in the down reach of the Gwangju Stream in 2001. Its dimensions were 31 meters in length and 12 meters in width. Water of the stream was funneled into it and its effluent was discharged back into the channel. Average litter layer of 9.6 cm was formed on its bottom in 2007. The layer and above-ground parts of reeds and cattails on the system were eliminated in Spring 2008. Volumes and water quality of inflow and outflow of the system were analyzed from May to November in 2007 and 2008, respectively. Inflow into the system both in 2007 and 2008 averaged approximately $40m^3/day$ and hydraulic residence time both in 2007 and 2008 was about 1.5 days. Average influent $NO_3-N$ concentration in 2007 and 2008 was 2.16 and 2.05 mg/L, respectively and influent TN concentration in 2007 and 2008 averaged 3.98 and 3.89 mg/L, respectively. With a 0.05 significance level, effluent temperatures, influent concentrations of $NO_3-N$ and TN, and stem numbers per square meter and height of the emergent plants showed no difference between the system with litter layer and without one. $NO_3-N$ removal in the system with litter layer and without it averaged 55.59 and 46.06%, respectively and TN retention averaged 57.24 and 48.97%, respectively. Both $NO_3-N$ and TN abatement rates in the system with litter layer were significantly high (p < 0.001) when compared with those without one. The wetland system having litter layer on its bottom was more efficient for $NO_3-N$ and TN retention than that without one.