• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1575-1580
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• 2012

In this paper, a DVB-T2(Digital Video Broadcasting-the 2nd Generation Terrestrial) receiver is designed under a USB-type windows environment, and the baseband frames for MPEG2-TS stream(File or Ethernet Modes) are analyzed for verifying the receiver. In addition, the performance of the BICM(Bit Interleaved Coding & Modulation) module in the receiver is analyzed in terms of PLP(Physical Layer Pipe) and L1(Layer 1) signals.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Archives of Plastic Surgery
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• v.38 no.5
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• pp.699-702
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• 2011

Purpose: Venous stasis ulcer is the most severe form of chronic venous insufficiency and this commonly appears in the lower limb. Pharmacological therapy, reconstruction of the venous system, surgical management, cellular therapy and compression therapy are known as the treatments of venous stasis ulcer, but relapses are common, which make it a typical chronic wound. We report here on a case of recurrent venous stasis ulcer that healed with compression therapy without any other treatment. Methods: A 35-year-old man with a 13 years history of venous stasis had developed an ulcer on the distal third portion of the lower left limb which was developed 12-year before enrollment in this study. He had been treated with vacuum assist closure, 2 times of cell therapy and 3 times of skin graft for 8 years, but the lesion recurred. From November, 2008 compression therapy was done with the 3M $Coban^{TM}$ 2 Layer Compression System (3M, St. Paul, USA). The ulcer at that time was oval shaped and $3{\times}4$ cm in size. A comfort layer bandage was applied from the proximal phalanx of the great toe to the knee. A compression layer bandage was applied on the previous layer with it being overlapped one half the width of the comfort layer bandage. The dressing was changed every 4 days and the change was recorded with photography. Results: A total of 12 $Coban^{TM}$ 2 Layer Compression Systems were used. The size of the ulcer decreased to $2.5{\times}2.5$ cm in one month, to $2{\times}2$ cm in 2 months, it was $1{\times}1.8$ cm in size at 3 months and it completely healed in 4 months. Conclusion: The venous stasis ulcer was completely healed using the 3M $Coban^{TM}$ 2 Layer Compression System. This method was easy to apply, made the patient comfortable and it provided an excellent compression effect. As in the previous studies, this compression therapy has been proven to play an important role for the treatment and prevention of venous stasis ulcer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.28.2-28.2
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.65-65
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.18.2-18.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.61-61
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.451-456
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• 2013

To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO(150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5 nm) / Al(200 nm) structure. The total thickness of light-emitting layer with co-doping and blue-doping/co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir$(acac) in UGH3 as host, respectively. The OLED characteristics were changed with position and thickness of blue doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) layer. The white PHOLEDs showed the maximum current density of $34.5mA/cm^2$, maximum brightness of $5,731cd/m^2$, maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6 lm/W, maximum quantum efficiency of 15.6%, and a Commission International de L'Eclairage (CIE) coordinate of (0.367, 0.436) at $1,000cd/m^2$.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.46 no.2
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• pp.201-215
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• 2013

The characteristics of the oceanographic environment in the Aleutian Basin of the Bering Sea during spring in 1996, 1997, and 1999 were clarified. An investigation of the water properties revealed five basic layers in the Bering Sea during spring: (1) a surface layer of warm and low-salinity water induced by solar heating, (2) a subsurface layer of cold and low-salinity water propagated slowly by heat from the surface layer, (3) a thermocline layer where salinity was constant but temperature sharply decreased, (4) a temperature inversion layer, and (5) a deep layer with a gradual decrease in temperature and increase in salinity toward the bottom. The ranges of water temperature and salinity were $1.8-5.5^{\circ}C$ and 31.81-34.08 in 1996, $1.5-7.2^{\circ}C$ and 31.9-34.06 in 1997, and $0.5-5.6^{\circ}C$ and 32.0-34.11 in 1999, respectively. The water temperature of the surface layer was approximately $1.6^{\circ}C$ higher in 1997 than in 1996 and 1999. The lowest temperature at a depth of 100-150 m was about $1^{\circ}C$ lower in 1999 than in 1996 and 1997. Nutrient levels (nitrate, phosphate, and silicate) contributing to the control of the growth of phytoplankton were higher in the Aleutian Basin than in the eastern continental shelf and Bogoslof Island area. This was closely associated with the phytoplankton distribution. Nutrient concentrations were lowest at a depth of 25 m. The high primary production at that depth was confirmed from the vertical distribution of chlorophyll a. Chlorophyll a levels were above $4.0{\mu}L^{-1}$ in some areas in 1996 and 1999, but below $2.0{\mu}L^{-1}$ in most areas in 1997. Zooplankton density was about three times higher in 1999 than in 1997.