• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.620-626
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• 1988

GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.1
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• pp.127-132
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• 2001

By the use of a similar numerical method as the forming limit strain by coating method of coated sheet metals is investigated, in which the FEM is applied and J2G(J2-Gotohs Corner Theory) is utilized as the plasticity constitutive equa-tion. Circular bonded sheet metals with dissimilar sheets on both surface planes are stretched in a plane -strain state, with various work-hardening exponent n-values and thicknesses of each layer. Processes of shear-band formation in such com-posite sheets are clearly illustrated. It is concluded that, it the bonded state, the higher limiting strain of one layer is reduced due to the lower limiting strain of the other layer and vice versa, and does not necessarily obey the rule of linear combination of the limiting strain of each layer weighed according thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.80-81
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.289-290
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• 2015

In this experiment, nitriding treatment has been performed at $400^{\circ}C$ with various $N_2$ content and with changing processing time on AISI 420 martensitic stainless steel to investigate the expanded martensite layer (${\alpha}^{\prime}_N$ layer) formation behavior. Nitriding was implemented with changing $N_2$ content from 10% to 25% for 15 hrs and processing time was changed from 4hr to 15hr at 25% $N_2$ content. After treatment, the behavior of the ${\alpha}^{\prime}_N$ layer was investigated by optical microscopy, X-ray diffraction, and micro-hardness testing. Potentiodynamic polarization test was also used to evaluate the corrosion resistance of the samples. It was found that the surface hardness and ${\alpha}^{\prime}_N$ layer thickness increases with increasing $N_2$ percentage and processing time. Although their corrosion behaviors are worse than the bare sample.

• Journal of Powder Materials
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• v.19 no.3
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• pp.196-203
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• 2012

$TiO_2$ was successfully formed on a Ti specimen by MAO (Micro-Arc-Oxidation) method treated in $Na_3PO_4$ electrolyte. This study deals with the influence of voltage and working time on the change of surface microstructure and phase composition. Voltage affected the forming rate of the oxidized layer and surface microstructure where, a low voltage led to a high surface roughness, more holes and a thin oxidized layer. On the other hand, a high voltage led to more dense surface structure, wider surface holes, a thick layer and fewer holes. Higher voltage increases photocatalytic activity because of better crystallization of the oxidized layer and good phase composition with anatase and rutile $TiO_2$, which is able to effectively separate excited electrons and holes at the surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.787-790
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• 2009

High contrast red, green and blue organic light-emitting diodes were fabricated using inorganic metal multi layer composed of thin Al, KCl and thick Al and then were compared to optical and electrical characteristics with the attached polarizer and conventional OLEDs. Ambient light reflection of OLED using inorganic metal layer, polarizer and conventional metal layer were 29.2, 31.1 and 82.5% respectively. Optical characteristics of OLEDs using inorganic metal layer were max luminescence of 13040 cd/m2 and luminous efficiency of 2.12 cd/A at 8V whereas OLEDs using polarizer has 8456 cd/m2 and 1.43 cd/A at 8V each. OLEDs including inorganic metal multi layers show significant technical advantages in achieving high performance of OLED display with improved contrast ratio of 251:1, specifically in Red OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.318-321
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• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.679-682
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• 2007

We have developed low voltage operating OLEDs with new electron transport layer. The device having a structure of ITO/2TNATA/HTL:Rubrene(1%)/HTL /new ETL/LiF/Al have been used. The voltage for achieving $1,000\;cd/m^2$ was 4.1 V, whereas the turn on voltage for the brightness of $1\;cd/m^2$ was 2.8 V. This high luminance at low operating voltage is caused by the high current density, resulting from high electron conduction property of the new electron transport layer.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.153-156
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• 2003

The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4％$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.