• 전자공학회논문지 IE
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• v.49 no.2
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• pp.46-51
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• 2012

Transmit signal of Enhancement Layer in AT-DMB system is received by Coherent Detection, but in Base Layer of AT-DMB, a differential modulation and demodulation is adopted, same as the T-DMB. Especially for the coherent dectection of enhancement layer in AT-DMB system, a channel estimation must be employed. In this paper, I will show that the BER performance of Base-Layer in AT-DMB system will be improved by using the channel estimation information. The suggested method is focusing the constallations after Equalizaing to the nearlest ${\pi}$/4-shift DQPSK constallation points. Simulation results show that for the non-coding environment, the BER performance of AWGN channel, about 2-dB gain can be achieved at $10^{-4}BER$.

• Archives of Plastic Surgery
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• v.32 no.3
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• pp.357-362
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• 2005

The aim of this study is to elucidate the effect of keratinase on epidermis of rat skin. Twenty-five male Sprague-Dolly rats were used. The hair on the back were removed and $2{\times}2cm$ area was marked. The rats were divided five groups; 1) Control group(Co), 2) Cleansing gel group(Cl), 3) Cleansing gel+keratinase group, 4) Exfoliant gel group(Ex), and 5) Exfoliant gel+ keratinase group(Ex+K). The solutions were applied to the back area twice a day for five days. On fifth day, the skins were harvested, fixed and prepared for histologic sections. The thickness of keratin layer, living epidermis, dermis, and cell layer number of living epidermis were measured. In the group containing keratinase(Cl+K, Ex+K), the thickness of keratin layer and living layer were thinner than other groups. However, there were no significant differences of the cell layer number of living epidermis and thickness of the dermis among the five groups. We think the keratinase may have the effect thinning the keratin layer as well as the thickness of living epidermis, without effecting the living cell and dermal component. The keratinase containing soap may be of benefit to remove the excess keratin layers in human.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• Nuclear Engineering and Technology
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• v.43 no.2
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• pp.159-166
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• 2011

Si-rich-layer-coated U-7 wt%Mo plates were prepared in order to evaluate the diffusion barrier performance of the Si-rich layer in U-Mo vs. Al interdiffusion. Pure Si powder was used for coating the U-Mo plates by annealing at $900^{\circ}C$ for 1 h under vacuum of approximately 1 Pa. Si-rich layers containing more than 60 at% of Si were formed on U-7 wt%Mo plates. Diffusion couple tests were conducted in a muffle furnace at $560-600^{\circ}C$ under vacuum using Si-rich-layer-coated U-Mo plates and pure Al plates. Diffusion couple tests using uncoated U-Mo plates and Al-(0, 2 or 5 wt%)Si plates were also conducted for comparison. Si-rich-layer coatings were more effective in suppressing the interaction during diffusion couple tests between coated U-Mo plate and Al, when compared with U-Mo vs. Al-Si diffusion couples, since only small amounts of Al in the coating could be found after the diffusion couple tests. Si-rich-layer-coated U-7wt%Mo particles were also prepared using the same technique for U-7 wt%Mo plates to observe the microsturctures of the coated particles.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.37-42
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• 2007

We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.6
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• pp.683-689
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• 2006

Statement of problem. Interfacial toughness is important in the mechanical property of layered dental ceramics such as core-veneered all-ceramic dental materials. The interfaces between adjacent layers must be strongly bonded to prevent delamination, however the weak interface makes delamination by the growth of lateral cracks along the interface. Purpose. The purpose of this study was to determine the effect of the reaction layer on the interfacial fracture toughness of the core/veneer structure according to the five different divesting. Materials and methods. Thirty five heat-pressed Lithia-based ceramic core bars (IPS Empress 2), $20mm{\times}3mm{\times}2mm$ were made following the five different surface divesting conditions. G1 was no dissolution or sandblasting of the interaction layer. G2 and G3 were dissolved layer with 0.2% HF in an ultrasonic unit for 15min and 30 min. G4 and G5 were dissolved layer for 15min and 30min and then same sandblasting for 60s each. We veneered bilayered ceramic bars, $20mm{\times}2.8mm{\times}3.8mm$(2mm core and 1.8mm veneer), according to the manufacturer's instruction. After polishing the specimens through $1{\mu}m$ alumina, we induced five cracks for each of five groups within the veneer close to interface under an applied indenter load of 19.6N with a Vickers microhardness indenter. Results. The results from Vickers hardness were the percentage of delamination G1:55%, G2:50%, G3:35%, G4:0% and G5:0%. SEM examination showed that the mean thickness of the reaction layer were G1 $93.5{\pm}20.6{\mu}m$, G2 $69.9{\pm}14.3{\mu}m$, G3 $59.2{\pm}20.2{\mu}m$, G4 $0.61{\pm}1.44{\mu}m$ G5 $0{\pm}0{\mu}m$. The mean interfacial delamination crack lengths were G1 $131{\pm}54.5{\mu}m$, G2 $85.2{\pm}51.3{\mu}m$, and G3 $94.9{\pm}81.8{\mu}m$. One-way ANOVA showed that there was no statistically significant difference in interfacial crack length among G1, G2 and G3(p> 0.05). Conclusion. The investment reaction layer played important role at the interfacial toughness of body ceramic bonded to Lithia-based ceramic.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.458-464
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• 2006

The Pd-Ni-Ag alloy composite membrane using modified porous stainless steel (PSS) as a substrate was prepared by a electroless plating technique. In this work, we have introduced the intermediate layer between Pd-based alloy and a metal substrate. As an intermediate layer, the mixtures of nickel powder and inorganic sol such as $SiO_{2}$ sol, $Al_{2}O_{3}$ sol, and $TiO_{2}$ sol were used. The intermediate layers were coated onto a PSS substrate according to various membrane preparation conditions and then $N_{2}$ fluxes through the membranes with different intermediate layers were measured. The surface morphology of the intermediate layer in the mixture of nickel powder and inorganic sol was analyzed using scanning electron microscope (SEM). Finally, the Pd-Ni-Ag alloy composite membrane using the support coated with the mixture of nickel powder and silica as an intermediate layer was fabricated and then the gas permeances for $H_{2}$ and $N_{2}$ through the Pd-based membrane were investigated. The selectivity of $H_2/N_2$ was infinite and the $H_{2}$ flux was $1.39{\times}10^{-2}mol/m^2{\cdot}s$ at the temperature of $500^{\circ}C$ and trans-membrane pressure difference of 1 bar.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.45-51
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• 2005

We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• Journal of Power System Engineering
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• v.17 no.6
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• pp.63-72
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• 2013

The main purpose of this study is to analyze the collection characteristics of multi-layer multi-stage porous plate system with ionizer and dielectric-substance experimentally. The experiment is carried out to analyze the characteristics of pressure drop and collection efficiency for the present system with experimental parameters such as applied voltage, inlet velocity, stage number and inlet particle concentration, etc. In results, for multi-layer multi-stage porous plate system of inflow type, at 5 stage and $v_{in}$=2.58 m/s, the pressure drop becomes lower 15 $mmH_2O$ as 95 $mmH_2O$ than that of non-inflow type system. It is estimated that for the present system with ionizer and dielectric-substance, the collection efficiency represents 98.5% showing higher 5.2% comparing to that of multi-layer multi-stage porous plate system without ionizer and dielectric-substance at 5 stage, $v_{in}$=2.58 m/s and inlet concentration $3g/m^3$(fly ash).