• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.495-500
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• 2010

In this study, $Al_2O_3$ and $TiO_2$ films was deposited on to PES (poly(ethersulfon) substrate by using atomic layer deposition as functions of deposition temperature and plasma power. The density and carbon contents of $Al_2O_3$ and $TiO_2$ films was changed by varying process conditions. High density thin films was achieved through optimizing the process conditions. Buffer layer was deposited prior to the processing of upper thin films to avoid PES surface destruction during the high power plasma process and to enhances the tortuous path for water vapor permeation for the defect decoupling effect. The water vapor transmission rate by using MOCON test was investigated to analyze the effect. Water vaper permeation properties was improved by using the inorganic multi-layer passivation layer and activation energy of the water vapor permeation was increased.

• Journal of Korean Society of Forest Science
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• v.99 no.3
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• pp.267-276
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• 2010

This study was performed to obtain basic data about vegetation structure and site environment of rare and endangered plant, viola websteri in five natural habitats. The dominant species of Hongcheon habitat were Pyrus pyrifolia (tree layer), Morus bombycis (subtree layer), Pyrus pyrifolia (shrub layer) and Isodon inflexus (herb layer). Mt. Yeonin habitat were dominated by Quercus mongolica (tree layer), Morus bombycis (subtree layer), Philadelphus schrenckii (shrub layer) and Viola websteri (herb layer). Mt. Yumyung habitat were dominated by Cornus controversa (tree layer), Morus bombycis (subtree layer), Fraxinus rhynchophylla (shrub layer) and Adenocaulon himalaicum (herb layer). Mt. Daebu habitat were dominated by Acer mono (tree layer), Staphylea bumalda (subtree layer), Staphylea bumalda(shrub layer) and Dryopteris crassirhizoma (herb layer). And the dominant species of Mt. Worak habitat were Larix leptolepis (tree layer), Fraxinus rhynchophylla (subtree layer), Alangium platanifolium var. macrophylum (shrub layer) and Adenocaulon himalaicum (herb layer). It was found out that the average acidity of soil pH was 5.23; 0.30ds/m for electron conductivity; 12.6% for organic matter content; 0.68% for total nitrogen; 21.66 ppm for available phosphorous; and 23.45 cmol(+)/kg for CEC. Interchangeable cation was decreased in order of $Ca^{2+}$ > $Mg^{2+}$ > $K^{2+}$. Viola websteri had positive association with Polygonatum odoratum var. pluriflorum and Geranium thunbergii but negative association with Poa sphondylodes. Species diversity index(H'), maximum Species diversity index (H' max), evenness(J') and dominance (1-J'), of investigated sites ranged 0.6816 (Mt. Worak)~0.9656 (Mt. Daebu), 1.0000 (Mt. Yeonin)~1.3010 (Hongcheon, Gangwon), 0.5330 (Mt. Worak)~0.8947 (Mt. Daebu) and 0.1053 (Mt. Daebu)~0.4670 (Mt. Worak) in woody layer and 1.0414 (Mt. Yumyung)~1.3295 (Mt. Worak), 1.4314 (Mt. Yumyung)~1.6435 (Mt. Daebu), 0.6984 (Hongcheon, Gangwon)~0.8356 (Mt. Worak) and 0.1644 (Mt. Worak)~0.3016 (Hongcheon, Gangwon) in herb layer, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• Corrosion Science and Technology
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• v.2 no.3
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• pp.141-147
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• 2003

Sputter-deposited Nb-Al-Cr alloys. $3-5{\mu}m$ thick, have been prepared on quartz substrates as oxidation-and sulfidation-resistant materials at high temperatures. The oxidation or the alloys in the $Ar-O_2$ atmosphere of an oxygen partial pressure of 20 kPa follows approximately the parabolic rate law, thus being diffusion controlled. Their oxidation rates are almost the same as or even lower than those ofthc typical chromia-forming alloys. The multi-lavered oxide scales are formed on the ternary alloys. The outermost layer is composed of $Cr_2O_3$, which is"mainly responsible for the high oxidation'resistance of these alloys. In contrast to sputter-deposited Cr-Nb binary alloys reported previously, the inner layer is not porous. TEM observation as well as EDX analysis indicates that the innermost layer is a mixture of $Al_2O_3$ and niobium oxide. The dispersion of $Al_2O_3$ in niobium oxide may be attributable to the prevention of the formation of the porous oxide layer. The sulfidation rates of the present ternary alloys arc higher than those of the sputter-deposited Nb-AI binary alloys, but still several orders of magnitude lower than those of conventional high temperature alloys. Two-layered sulfide scales are formed, consisting of an outer $Al_2S_3$ layer containing chromium and an inner layer composed of $NbS_2$ and a small amount of $Cr_2S_3$. The presence of $Cr_2S_3$ in the inner protective $NbS_2$ layer may be attributed to the increase in the sulfidation rates.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.61-67
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• 2023

In order to optimize the pulse electroforming copper process, a double hidden layer BP (Back Propagation) neural network is constructed. Through sample training, the mapping relationship between electroforming copper process conditions and target properties is accurately established, and the prediction of microhardness and tensile strength of the electroforming layer in the pulse electroforming copper process is realized. The predicted results are verified by electrodeposition copper test in copper pyrophosphate solution system with pulse power supply. The results show that the microhardness and tensile strength of copper layer predicted by "3-4-3-2" structure double hidden layer neural network are very close to the experimental values, and the relative error is less than 2.32%. In the parameter range, the microhardness of copper layer is between 100.3~205.6MPa and the tensile strength is between 112~485MPa.When the microhardness and tensile strength are optimal,the corresponding process conditions are as follows: current density is 2A-dm-2, pulse frequency is 2KHz and pulse duty cycle is 10%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.50-55
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• 2014

It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Applied Science and Convergence Technology
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• v.24 no.2
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.

• Journal of Astronomy and Space Sciences
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• v.33 no.4
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• pp.273-278
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• 2016

December 2009 was one of the quietest (monthly Ap=2) months over the last eight decades. It provided an excellent opportunity to study the day-to-day variability of the F2 layer with the smallest contribution due to geomagnetic activity. With this aim, we analyze hourly values of the F2-layer critical frequency (foF2) recorded at 18 ionosonde stations during the magnetically quietest (Ap=0) days of the month. The foF2 variability is quantified as the relative standard deviation of foF2 about the mean of all the "zero-Ap" days of December 2009. This case study may contribute to a more clear vision of the F2-layer variability caused by sources not linked to geomagnetic activity. In accord with previous studies, we find that there is considerable "zero-Ap" variability of foF2 all over the world. At most locations, foF2 variability is presumably affected by the passage of the solar terminator. The patterns of foF2 variability are different at different stations. Possible causes of the observed diurnal foF2 variability may be related to "meteorological" disturbances transmitted from the lower atmosphere or/and effects of the intrinsic turbulence of the ionosphere-atmosphere system.