• Coupled systems mechanics
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• 제5권4호
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• pp.371-393
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• 2016

We propose a heat jet approach for a two-dimensional square lattice with nearest neighbouring harmonic interaction. First, we design a two-way matching boundary condition that linearly relates the displacement and velocity at atoms near the boundary, and a suitable input in terms of given incoming wave modes. Then a phonon representation for finite temperature lattice motion is adopted. The proposed approach is simple and compact. Numerical tests validate the effectiveness of the boundary condition in reflection suppression for outgoing waves. It maintains target temperature for the lattice, with expected kinetic energy distribution and heat flux. Moreover, its linear nature facilitates reliable finite temperature atomic simulations with a correct description for non-thermal motions.

• 대한기계학회논문집B
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• 제26권10호
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

• Journal of Magnetics
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• 제13권2호
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• pp.61-64
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• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

• Nuclear Engineering and Technology
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• 제48권3호
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• pp.660-672
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• 2016

In Part I of this paper, the two-temperature homogenized model for the fully ceramic microencapsulated fuel, in which tristructural isotropic particles are randomly dispersed in a fine lattice stochastic structure, was discussed. In this model, the fuel-kernel and silicon carbide matrix temperatures are distinguished. Moreover, the obtained temperature profiles are more realistic than those obtained using other models. Using the temperature-dependent thermal conductivities of uranium nitride and the silicon carbide matrix, temperature-dependent homogenized parameters were obtained. In Part II of the paper, coupled with the COREDAX code, a reactor core loaded by fully ceramic microencapsulated fuel in which tristructural isotropic particles are randomly dispersed in the fine lattice stochastic structure is analyzed via a two-temperature homogenized model at steady and transient states. The results are compared with those from harmonic- and volumetric-average thermal conductivity models; i.e., we compare $k_{eff}$ eigenvalues, power distributions, and temperature profiles in the hottest single channel at a steady state. At transient states, we compare total power, average energy deposition, and maximum temperatures in the hottest single channel obtained by the different thermal analysis models. The different thermal analysis models and the availability of fuel-kernel temperatures in the two-temperature homogenized model for Doppler temperature feedback lead to significant differences.

• 한국결정학회지
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• 제12권1호
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• pp.14-19
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• 2001

Effects of electric-field-induced lattice distortion on the polarization and strain were investigated in Pb(Mg/sub 1/3/Nb/sub 2/3)O₃ relaxor ferroelectric ceramics in the temperature range of -50℃∼90℃. The ratio of residual strain and polarization (S/sub r//P/sub r/ rarely depends on the temperature. However, the ratio of the electric field included strain and polarization (S/sub induced//P/sub induced/) increased as the temperature decreases below phase transition temperature. To explain these experimental results, a simple rigid ion model concentrating on only Bo/sub 6/ octahedron was suggested.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• 한국자기학회지
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• 제5권5호
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• pp.854-857
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• 1995

비자성 분순물을 갖는 $CuF_{2}.2H_{2}O$의 수소 핵자기공명을 77-295 K의 온도범위에서 수행하였다. 그 결과 수소의 스핀-격자 완화율을 지배하는 메카니즘이 구리 전자 스핀의 재주넘기(filp)와 전자-포논 상호작용(Raman process)의 변조에 의한 것임을 알 수 있었다. 또한 전자 스핀 재주넘기에 대한 교환에너지 $1.8(\pm0.04)$ K를 구할 수 있었다.

• 한국재료학회지
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• 제21권2호
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• pp.73-77
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• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1005-1010
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• 1997

ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{\circ}C$ its surface index was [111] and its lattice constant of a was 5.41$\AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{\circ}C$annealing temperature of 50$0^{\circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$\AA$and 12.41$\AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.

• 대한금속재료학회지
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• 제50권10호
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• pp.703-710
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• 2012

The effects of the ordering reaction on high temperature mechanical behavior is investigated by tensile tests at $2{\times}10^{-2}/s-3.3{\times}10^{-5}/s$ up to $745^{\circ}C$. The tensile deformed region is examined by differential scanning calorimeter (DSC), TEM, and high resolution neutron diffraction (HRPD). The results showed that a plateau of tensile strength appeared at $150-500^{\circ}C$ whereas the elongation minimum occurred at about $600^{\circ}C$. This suggests that the occurrence of a plateau does not cause the elongation minimum. The temperature of the elongation minimum decreases with the strain rate. HRPD results show a lattice contraction in the tensile deformed specimen at the temperature of the plateau occurring region. The plateau of tensile strength, the lattice contraction, and the occurrence of serration appeared in the same temperature region.