• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Journal of the Mineralogical Society of Korea
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• v.28 no.2
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• pp.127-133
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• 2015

Li-bearing muscovite is commonly found along with trioctahedral lepidolite in granitic pegmatites. Structurally, $Li^+$ ions can replace $K^+$ ions in the interlayer (Int) of muscovite or incorporate into vacancies of the dioctahedral sheet (Sub). However, detailed mechanism of the lithium incorporation into muscovite is challenging to investigate using experimental techniques alone. In the current study, density functional theory (DFT) has been applied to examine the crystal structure and energy variation when $Li^+$ resides in the interlayer or the octahedral sheet. Depending on the position of $Li^+$ (i.e., Int vs. Sub), DFT showed significant differences in the mica's structures such as lattice parameters, sheet thickness, interlayer separation, and OH angles with respect to the ab plane. DFT further showed that, in pure muscovite, $Li^+$ has a lower energy when it is located in Int than Sub. By contrast, in the case of $Fe^{2+}$ substitution into the octahedral sheet, $Li^+$ has a lower energy in Sub than in Int. These results imply that $Li^+$ incorporates into the Al octahedral sheets only when the octahedral sheets possess structural charges, suggesting cation substitution in the octahedral sheets plays an important role in the Li incorporation mechanism into muscovite. They can also explain the experimental observation about the positive relationship between $Fe^{2+}$ and $Li^+$ amounts in Li-bearing muscovite.

• Journal of the Korean Institute of Landscape Architecture
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• v.14 no.2
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• pp.69-80
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• 1986

In order to analyse the color preference quantitatively, specially with reference to the subjects in the age of twenties, 100 subjects(M=50, F=50) that unconsidered other factors were adopted and responded to 4 items of the questionaire. The item no. 1 was to investigate the most prefered color on the white background, no. 2 was to most preferred stimulation -level of lightness in the same hues, no. 3 was to most prefered color on 5 different backgrounds -grey, blue, pink, yellow, and yellow green-, and no. 4 was same as no. 3 but with different color-arrangement Materials for item 1 and 3 were made with transparent acryl-boards(30cm$\times$30cm), on which 16 color chips arranged on circle, for item 4 on lattice, and for item 2 with 16 white boards(8cm$\times$21cm), on which 7 color chips of different lightness-level arranged. Reflectance(Y) and color coordinate(x, y) of all color chips measured with color difference meter were transfered into wavelength(nm), exitation purity(%), and Munsell's value. The results may be summarized as follows: 1) Most prefered color was bluish green with wave1ength about 500nm. As increasing of exitation purity of color, more prefered. 2) When there were 7 different levels of lightness in the same hues, the relationship between the number of preference and the stimulation was inverted U-shaped. 3) With changing the background -color, the prefered colors were contrasting when backgrounds were low or high intensity-stimulation and familiar colors when backgrounds were medium intensity.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• The Journal of Engineering Geology
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• v.23 no.2
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• pp.171-186
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• 2013

A drilling project was undertaken to characterize the geochemical relationship and the occurrence of radioactive materials at a test site among public-use groundwaters previously known to have high occurrence of uranium and radon-222 in the Daejeon area. A borehole (121 m deep) was drilled and core rocks mainly consist of two-mica granite, and associated with pegmatite and dykes of intermediate composition. The groundwater samples collected at six different depths in the borehole by a double-packed system showed the pH values ranging from neutral to alkaline (7.10-9.3), and electrical conductivity ranging from 263 to 443 ${\mu}S/cm$. The chemical composition of the borehole groundwaters was of the $Ca-HCO_3(SO_4+Cl)$ type. The uranium and Rn-222 contents in the groundwater were 109-1,020 ppb and 9,190-32,800 pCi/L, respectively. These levels exceed the regulation guidelines of US EPA. The zone of the highest groundwater uranium content occurred at depths of 45 to 55m. The groundwater chemistry in this zone (alkaline, oxidated, and high in bicarbonate) is favorable for the dissolution of uranium into groundwater. The dominant uranium complex in groundwater is likely to be $(UO_2CO_3)^0$ or $(UO_2HCO_3)^+$. Radon-222 content in groundwater shows an increasing trend with depth. The uranium and thorium contents in the core were 0.372-47.42 ppm and 0.388-11.22 ppm, respectively. These levels are higher values than those previously been reported in Korea. Microscopic observations and electron microprobe analysis(EPMA) revealed that the minerals containing U and Th are monazite, apatite, epidote, and feldspar. U and Th in these minerals are likely to substitute for major elements in crystal lattice.

• Investigative Magnetic Resonance Imaging
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• v.2 no.1
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• pp.14-30
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• 1998

Manganese is an essential element in the body. It is mainly deposited in the liver and to a lesser degree in the basal ganglia of the brain and eliminated through the bile duct. Rapid turnover of managanese in the body makes it difficult to evaluate the manganese exposure in workers, esecially in those with irregular or intermittent exposure, like welders. Therefore, conventional biomarkers, including blood and urine manganese can provide only a limited information about the long-tern or cumulative exposure to manganese. Introduction of magnetic resonance imaging (MRI) made a progress in the assessment of manganese exposure in the medical conditions related to manganese accumulation, e. g. hepatic failure and long-term total parenteral nutrition. Manganese shortens spin-lattice(T1) relaxation time on MRI due to its paramagnetic property, resulting in high signal intensity (HSI) on T1-weighted image(T1W1) of MRI. Manganese deposition in the brain, therefore, can be visualizedas an HSI in the globus pallidus, the substantia nigra, the putamen and the pituitary. clinical and epidemiologic studies regarding the MRI findings in the cases of occupational and non-occupational manganese exposure were reviewed. relationships between HSI on T1W1 of MRI and age, gender, occupational manganese exposure, and neurological dysfunction were analysed. Relationships betwen biological exposure indices and HSI on MRE werealso reviewed. Literatures were reviewed to establish the relationships between HSI, Manganese deposition in the brain, pathologic findings, and neurological dysfunction. HSI on T1W1 of MRI reflects regional manganese deposition in the brain. This relationship enables an estimation of regional manganese deposition in the brain by analysing MR signal intensity. Manganese deposition in the brain can induce a neuronal loss in the basal ganglia but functional abnormality is supposed to be related to the cumulative exposure of manganese in the brain, use of brain MRI for the assessment of exposure in a group of workers seems to be hardly rationalized, while ti can be a useful adjunct for the evaluation of manganese exposure int he cases with suspected manganese-related health problems.