• 한국광물학회지
• /
• 제20권2호
• /
• pp.97-102
• /
• 2007

보석질 천연 다이아몬드와 합성 다이아몬드의 $^{15}N$와 $^{13}C$에 대하여 다양한 스핀 이완 시간과 반복 시간을 적용한 NMR 실험을 수행하였다. $^{13}C$에 대해서는 보석질 천연 다이아몬드는 실험 반복 시간이 30초에서 34.1 ppm의 미약한 신호를 얻었으며 합성 다이아몬드에서는 실험 반복 간격이 0.5초에서부터 34.2 ppm의 신호를 얻었으며 실험 반복 시간이 50초에서는 더 뚜렷한 34.7 ppm의 신호를 얻을 수 있었다. 천연 및 합성 다이아몬드의 극히 낮은 함량에 기인하여 $^{15}N$는 NMR 신호가 감지되지 않았다. 천연 다이아몬드와 합성 다이아몬드의 이완 시간과 불순물의 성분 함량은 서로 밀접한 관련성이 있음을 확인하였으나 $^{13}C$의 NMR 특성의 유사성으로 신호의 강약의 차이를 제외하고는 천연 혹은 합성 여부의 구별은 가능하지 않았다.

• 한국결정성장학회지
• /
• 제12권6호
• /
• pp.299-303
• /
• 2002

The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.

• 한국재료학회지
• /
• 제11권11호
• /
• pp.997-1000
• /
• 2001

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

• 한국방송∙미디어공학회:학술대회논문집
• /
• 한국방송공학회 2014년도 추계학술대회
• /
• pp.226-227
• /
• 2014

We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.

• 한국재료학회지
• /
• 제26권10호
• /
• pp.535-541
• /
• 2016

The present study deals with the effects of micro-alloying elements such as Ni, V, and Ti on the recrystallization behavior of carbon steels at different strain rates. Eight steel specimens were fabricated by varying the chemical composition and reheating temperature; then, a high-temperature compressive deformation test was conducted in order to investigate the relationship of the microstructure and the recrystallization behavior. The specimens containing micro-alloying elements had smaller prior austenite grain sizes than those of the other specimens, presumably due to the pinning effect of the formation of carbonitrides and AlN precipitates at the austenite grain boundaries. The high-temperature compressive deformation test results indicate that dynamic recrystallization behavior was suppressed in the specimens with micro-alloying elements, particularly at increased strain rate, because of the pinning effect of precipitates, grain boundary dragging and lattice misfit effects of solute atoms, although the strength increased with increasing strain rate.

• Tribology and Lubricants
• /
• 제23권1호
• /
• pp.9-13
• /
• 2007

Despite numerous researches on atomic-scale friction have been carried out for understanding the origin of friction, lots of questions about sliding friction still remain. It is known that friction at atomic-scale always shows unique phenomena called 'stick-slips' which reflect atomic lattice of a scanned surface. In this work, experimental study on the effects of system stiffnesses and load on the atomic-scale stick-slip friction of graphite was performed by using an Atomic Force Microscope and various cantilevers/tips. The objective of this research is to figure out the dependency of atomic-scale friction on the nanomechanical properties in sliding contact such as load, stiffness and contact materials systematically. From this work, the experimental observation of transitions in atomic-scale friction from smooth sliding to multiple stick-slips in air was first made, according to the lateral cantilever stiffness and applied normal load. The superlubricity of graphite could be verified from friction vs. load experiments. Based on the results, the relationship between the stickslip behaviors and contact stiffness was carefully discussed in this work. The results or this work indicate that the atomic-scale stick-slip behaviors can be controlled by adjusting the system stiffnesses and contact materials.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
• /
• pp.149-156
• /
• 1998

In this work, aiming at improvement of growth processes for the bulk GaAs single crystals, efforts have been made first in investigate thermodynamic properties of the Ga and As system and second to suggest that bulk GaAs crystals could be grown in principle with the single temperature zone only by determining the excess arsenic charge as a function of growth conditions. During crystal growth, this will be evaporized inside the growth chamber to induce the required inner pressure, instead of aesenic vapor pressure in the double temperature zone method, so as to be in equilibrium with the method, growth experiments have been prepared and carried out for dopes and undoped GaAs crystals with the newly built Bridgman system which was designed according to this principle. To compare the results to those of the double temperature zone method, the same numbers of GaAs crystals have been grown with both processes and all of them were characterized in single crystallinity, lattice defects and electrical properties. Especially, the relationship between growth conditions and crystal quality was discussed from the viewpoint of growth peculiarities with this method.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
• /
• pp.190-190
• /
• 2009

We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of $125{\pm}5^{\circ}C$ and the MgO matches the Ge with a cell ratio of $\sqrt{2}$:1 which renders MgO rotated by $45^{\circ}$ relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100] || MgO(001)[110] || Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is $1430{\pm}20$ emu/cc, which is comparable to the value of bulk CoFe.

• Wind and Structures
• /
• 제22권1호
• /
• pp.65-87
• /
• 2016

The wind velocity profile over the height of a structure in high intensity wind (HIW) events, such as downbursts, differs from that associated with atmospheric boundary layer (ABL) winds. Current design codes for lattice transmission structures contain only limited advice on the treatment of HIW effects, and structural design is carried out using wind load profiles and response factors derived for ABL winds. The present study assesses the load-deformation curve (capacity curve) of a transmission tower under modeled downburst wind loading, and compares it with that obtained for an ABL wind loading profile. The analysis considers nonlinear inelastic response under simulated downburst wind fields. The capacity curve is represented using the relationship between the base shear and the maximum tip displacement. The results indicate that the capacity curve remains relatively consistent between different downburst scenarios and an ABL loading profile. The use of the capacity curve avoids the difficulty associated with defining a reference wind speed and corresponding wind profile that are adequate and applicable for downburst and ABL winds, thereby allowing a direct comparison of response under synoptic and downburst events. Uncertainty propagation analysis is carried out to evaluate the tower capacity by considering the uncertainty in material properties and geometric variables. The results indicated the coefficient of variation of the tower capacity is small compared to those associated with extreme wind speeds.

• 한국자기학회지
• /
• 제5권1호
• /
• pp.21-26
• /
• 1995

비화학양론 조성의 니켈-아연 페라이트 소결체 시편에서 투자율과 유전율을 체계적으로 변화 시킴에 따라 전파흡수특성에 미치는 영향을 조사하였다. ${(Ni_{0.5}Zn_{0.5}O)}_{1-x}(Fe_{2}O_{3})_{1+x}$ 시편은 일반적인 세라믹 제조공정에 의해 제조 하였다. 본 연구에서는 니켈-아연 페 라이트에서 ${\alpha}-Fe_{2}O_{3}$ 함량을 변화시킴에 따라 복수투자율과 복소유전율의 조절 방안 을 조사하였다. 철과잉량의 효과는 유전상수 증가였으며 철결핍량의 효과는 ${\mu}_{r}"$ 감소이었다. 니켈-아연 페라이트에서 ${\alpha}-Fe_{2}O_{3}$ 함량 변화에 따라 정합주파수와 정합두께 조절이 가능함을 제시하였다.