• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.156-157
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• 2005

Gas hydrate is ice-like crystalline lattice, formed at appropriate temperature and pressure, in which gas molecules are trapped. It is worldwide popular interesting subject as a potential energy. In korea, a seismic survey for gas hydrate have performed over the East sea by the KIGAM since 1997. In this paper, we had conducted numerical and physical modeling experiments for seismic properties on gas hydrate with field data which had been acquired over the East sea in 1998. We used a finite difference seismic method with staggered grid for 2-D elastic wave equation to generate synthetic seismograms from multi-channel surface seismic survey, OBC(Ocean Bottom Cable) and VSP(Vertical Seismic Profiling). We developed the seismic physical modeling system which is simulated in the deep sea conditions and acquired the physical model data to the various source-receiver geometry. We carried out seismic complex analysis with the obtained data. In numerical and physical modeling data, we observed the phase reversal phenomenon of reflection wave at interface between the gas hydrate and free gas. In seismic physical modeling, seismic properties of the modeling material agree with the seismic velocity estimated from the travel time of reflection events. We could easily find out AVO(Amplitude Versus Offset) in the reflection strength profile through seismic complex analysis.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.28-33
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• 2002

In this paper, the impedance-tuned monopole microstrip antenna designed for PCS is analyzed using finite difference time domain(FDTD) method. The perfectly matched layer(PML) absorbing material condition proposed by Berenger is used for the truncation of finite difference time domain lattice. A Gaussian pulse is selected as an excitation signal and a resistive voltage source model is used to reduce the error caused by the reflection waves. The FDTD method is inherently a near field technique. Therefore, the near field to far field transformation is need to compute far field antenna parameters such as radiation patterns and gain. The near field to far field transformation can be done both in the time domain and the frequency domain. We use the frequency domain transformation to compute the far field radiation patterns at single frequency. All the numerical results obtained by the FDTD method are compared with simulation results using the HFSS software. Good agreements are obtained in all cases.

• Tunnel and Underground Space
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• v.18 no.3
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• pp.226-238
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• 2008

The steel ribs which are used to enhance the supporting capability of the shotcrete are estimated to be very effective, but their characteristics depending on the types of steel support are not well understood enough to be considered in the design stage. This paper describes the behavior of the shotcrete reinforced by various types of steel supports. Through flexural toughness test, major strength parameters such as flexural tensile strength, equivalent flexural tensile strength and residual tensile strength were obtained and used in the numerical analyses. Test results show that steel rebar was not as dependable as H-beam or lattice girder but close examination of the test results revealed that the specimen was failed in shear because of the shorter span than desired. Therefore tests on the properly dimensioned specimens are necessary for valid evaluation of the steel rebar reinforced shotcrete. In the first set of numerical stability analyses, shotcrete and steel supports were modelled separately. Then compared with the second set of analyses in which shotcrete and steel supports were regarded as a composite material. The two results coincided reasonably and this equivalent model turned out to be useful.

• Nuclear Engineering and Technology
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• v.45 no.2
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• pp.211-218
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• 2013

Large quantities of irradiated graphite waste from graphite-moderated nuclear reactors exist and are expected to increase in the case of High Temperature Reactor (HTR) deployment [1,2]. This situation indicates the need for a graphite waste management strategy. Of greatest concern for long-term disposal of irradiated graphite is carbon-14 ($^{14}C$), with a half-life of 5730 years. Fachinger et al. [2] have demonstrated that thermal treatment of irradiated graphite removes a significant fraction of the $^{14}C$, which tends to be concentrated on the graphite surface. During thermal treatment, graphite surface carbon atoms interact with naturally adsorbed oxygen complexes to create $CO_x$ gases, i.e. "gasify" graphite. The effectiveness of this process is highly dependent on the availability of adsorbed oxygen compounds. The quantity and form of adsorbed oxygen complexes in pre- and post-irradiated graphite were studied using Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Xray Photoelectron Spectroscopy (XPS) in an effort to better understand the gasification process and to apply that understanding to process optimization. Adsorbed oxygen fragments were detected on both irradiated and unirradiated graphite; however, carbon-oxygen bonds were identified only on the irradiated material. This difference is likely due to a large number of carbon active sites associated with the higher lattice disorder resulting from irradiation. Results of XPS analysis also indicated the potential bonding structures of the oxygen fragments removed during surface impingement. Ester- and carboxyl-like structures were predominant among the identified oxygen-containing fragments. The indicated structures are consistent with those characterized by Fanning and Vannice [3] and later incorporated into an oxidation kinetics model by El-Genk and Tournier [4]. Based on the predicted desorption mechanisms of carbon oxides from the identified compounds, it is expected that a majority of the graphite should gasify as carbon monoxide (CO) rather than carbon dioxide ($CO_2$). Therefore, to optimize the efficiency of thermal treatment the graphite should be heated to temperatures above the surface decomposition temperature increasing the evolution of CO [4].

• Korean Journal of Materials Research
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• v.34 no.10
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• pp.464-474
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• 2024

Electrical and thermal transport properties of a polycrystalline carrier-doped wide-gap semiconductor LaCu_1-δS_0.5Se_0.5O (δ = 0.01), in which the CuCh (Ch = S, Se) layer works as conducting layer, were measured at temperatures 473~673 K. The presence of δ = 0.01 copper defects dramatically reduces the electrical resistivity (ρ) to approximately one part per million compared to that of δ = 0 at room temperature. The polycrystalline δ = 0.01 sample exhibited ρ of 1.3 × 10^-3 Ωm, thermal conductivity of 6.0 Wm^-1 K^-1, and Seebeck coefficient (S) of 87 µVK^-1 at 673 K. The maximum value of the dimensionless figure of merit (ZT) of the δ = 0.01 sample was calculated to be 6.4 × 10^-4 at T = 673 K. The ZT value is far smaller than a ZT ~ 0.01 measured for a nominal LaCuSeO sample. The smaller ZT is mainly due to the small S measured for LaCu_1-δS_0.5Se_0.5O (δ = 0.01). According to the Debye model, above 300 K phonon thermal conductivity in a pure lattice is inversely proportional to T, while thermal conductivity of the δ = 0.01 sample increases with increasing T.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.