• Journal of Magnetics
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• v.12 no.4
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• pp.152-155
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• 2007

Spin dependent transport was investigated in lateral $Py(Ni_{81}Fe_{19})/Au/Py$ spin valve devices. Clear spin valve effect was observed in conventional four-terminal measurement geometry. Higher resistance was found in antiparallel magnetization field of two Py electrodes which is determined by anisotropy magnetoresistance (AMR) measurements. The rectangular shape of spin signal together with good agreement of switching field convinces observed spin valve signal is resulted from effective spin injection and detection. The magnetoresistance ratio decays exponentially with channel length by which spin diffusion length of Au channel was estimated to be 76 nm.

• Journal of Magnetics
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• v.13 no.3
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• pp.81-84
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• 2008

Spin injection and detection in lateral spin valves with double nonmagnetic bottom electrodes are investigated theoretically. Spin-polarized current injected from a magnetic electrode is split to two bottom electrodes, and nonlocal spin signals between the other magnetic electrode and the nonmagnetic electrodes are calculated from drift-diffusion equations. It is shown that the spin signal is approximately proportional to the associated current in the electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.336-336
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• 2016

We have investigated magneto-transport properties in a MoS2 lateral spin-valve structures for different ferromagnetic CoFe electrode shapes and MoS2 channel lengths. For these devices, high quality and large-scale MoS2 thin films were synthesized through sulfurization of epitaxial MoO3 films and these sulfurized-MoO3 thin films properties are in good agreements with measurements on exfoliated MoS2 film. Magneto-transport measurements show a clear rectangular magnetoresistance signal of 0.16% and a spin polarization of 0.00012%. By using the one-dimensional spin diffusion equation, we extracted the spin diffusion length and coefficient, finding them to be 12 nm and $1.44{\times}10-3cm2/s$, respectively. These small values of magnetoresistance and spin polarization could be enhanced by appeasement of conductivity mismatch between the ferromagnet and semiconductor interface.