Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.336-336
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- 2016
Magneto-transport properties of CVD grown MoS2 lateral spin valves
- Published : 2016.02.17
Abstract
We have investigated magneto-transport properties in a MoS2 lateral spin-valve structures for different ferromagnetic CoFe electrode shapes and MoS2 channel lengths. For these devices, high quality and large-scale MoS2 thin films were synthesized through sulfurization of epitaxial MoO3 films and these sulfurized-MoO3 thin films properties are in good agreements with measurements on exfoliated MoS2 film. Magneto-transport measurements show a clear rectangular magnetoresistance signal of 0.16% and a spin polarization of 0.00012%. By using the one-dimensional spin diffusion equation, we extracted the spin diffusion length and coefficient, finding them to be 12 nm and