Characteristics of Free-Standing GaN Substrates grown by Hydride Vapor Phase Epitaxy (Hydride Vapor Phase Epitaxy 법으로 성장된 Free-Standing GaN 기판의 특성에 관한 연구)
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- Journal of the Institute of Electronics Engineers of Korea SD
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- v.37 no.3
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- pp.14-19
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- 2000