• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.449-453
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• 2021

Interest and investment in renewable energy have increased worldwide, highlighting the need for renewable energy. Solar energy was the most promising energy of all renewable energy sources, and it has the highest investment value. Because photovoltaics require a certain amount of area for installation, high density and high output performance are required. Shingled module is a promising technology in that they are featured by higher density and higher output compared to the conventional modules. Shingled technology uses a laser scribing to divide solar cells that are to be bonded with electrically conductive adhesive (ECA) to produce and connect strings, which has a higher output in the same area than the conventional modules. In the process of producing solar modules, metal ribbons are used to interconnect cells, but they are also needed for string connections in shingled solar cells. Accordingly, in this study, we researched the interconnection that best suits the connector that joins the string to the string. The module outputs produced under the conditions of the string interconnection were compared and analyzed.

• Korean Journal of Optics and Photonics
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• v.30 no.3
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• pp.114-119
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• 2019

This paper discusses the development of a Raman lidar system for remote detection and measurement of hydrogen gas by using a photon counter. The Raman signal of the hydrogen gas is very weak and has a very low signal-to-noise ratio. The photon counter has the advantage of improving the signal-to-noise ratio, because it has a discriminator to eliminate the background noise from the Raman signal of the hydrogen gas. Therefore, a small and portable Raman lidar system was developed using a low-power pulsed laser and a photon-counter system to measure the hydrogen gas concentration remotely. To verify the capability of measuring hydrogen gas using the developed photon-counting Raman lidar system, experiments were carried out using a gas chamber in which it is possible to adjust the hydrogen gas concentration. As a result, our photon-counting Raman lidar system is seen to measure a minimum concentration of 0.65 vol.% hydrogen gas at a distance of 10 m.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.2
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• pp.43-50
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• 2022

In this paper, we designed and verified a Far-field measurement system for measuring the performance of an antenna operating in millimeter wave(W-band). For the antenna test, a measurement system should be selected according to the type of antenna, measurement items, measurement environment and period, etc. In the case of near-field measurement, it takes a lot of time because the number of measurement items increases when the antenna has multiple channels or various beams. Such an antenna can reduce the measurement time through Far-field measurement, and only necessary measurement items can be measured. Therefore, this study secured precise alignment of the far-field measurement system using a high-power laser and improved the measurement accuracy by applying a double amplifier system. The designed system was built in the anechoic chamber and verified by comparison with the verified Near-field measurement system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.101-103
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• 2022

CCTV is mainly used as a real-time detection system for critical facilities. In the case of CCTV, although the accuracy is high, the viewing angle is narrow, so it is used in combination with a sensor such as a radar. LiDAR is a technology that acquires distance information by detecting the time it takes to reflect off an object using a high-power pulsed laser. In the case of lidar, there is a problem in that the utilization is not high in terms of cost and technology due to the limitation of the number of simultaneous processing sensors in the server due to the data throughput. The detection method by the optical mesh sensor is also vulnerable to strong winds and extreme cold, and there is a problem of maintenance due to damage to animals. In this paper, by using the 1550nm wavelength band instead of the 905nm wavelength band used in the existing lidar sensor, the effect on the weather environment is strong and we propose to develop a system that can integrate and control multiple sensors.

• Journal of Powder Materials
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• v.31 no.3
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• pp.220-225
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• 2024

Molten salt reactors represent a promising advancement in nuclear technology due to their potential for enhanced safety, higher efficiency, and reduced nuclear waste. However, the development of structural materials that can survive under severe corrosion environments is crucial. In the present work, pure Ni was deposited on the surface of 316H stainless steel using a directed energy deposition (DED) process. This study aimed to fabricate pure Ni alloy layers on an STS316H alloy substrate. It was observed that low laser power during the deposition of pure Ni on the STS316H substrate could induce stacking defects such as surface irregularities and internal voids, which were confirmed through photographic and SEM analyses. Additionally, the diffusion of Fe and Cr elements from the STS316H substrate into the Ni layers was observed to decrease with increasing Ni deposition height. Analysis of the composition of Cr and Fe components within the Ni deposition structures allows for the prediction of properties such as the corrosion resistance of Ni.

• Journal of Ginseng Research
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• v.24 no.3
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• pp.107-112
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• 2000

One of the physiologically important ginseng diseases is red-colored phenomena (RCP) that is caused by accumulation of red-colored substances on the epidermis of ginseng roots. Although RCP severely deteriorates the quality of ginseng products, there has been little information on what red-colored substance is and how RCP occurs. Therefore, the heavy losses of cultivators and ginseng industry are suffering by RCP, For this reason, we have investigated with the morphochernical characteristics of RCP to find out main cause of it. The red-colored substances (RS) on the epidermis of red-colored ginseng (RCG) were examined using inverted light microscope, confocal laser scanning microscope (CLSM)and furier transform infrared (FT/IR) spectrometer. Red brown substances were accumulated in the cell wall of the epidermis from early stage to late stage of RCC. Especially, cell wall of the late stage of RCG was covered with the sub-stances with 80~ 130 fm thick. Therefore, the cell wall of RCG cannot protect the ginseng root cells from the mechanical damages, bacteria and fungi. To analyse red substances of roots, RS were isolated from epidermis of RCG and extracted using various solvents. RS is strongly insoluble but it was bleached by oxidizing agents including 12% (v/v) NaOCl. Therefore, RS was Presumed to make up of high chelation power. The proriles of FT/IR spectra or both healthy ginseng (HEG) and RCG showed a significant difference at two wavelength,2857 cm$\^$-1/(C-H) and 1032 cm$\^$-1/(S=O), respectively. Furthermore, absorption peak of 2857cm$\^$-l/ appears on the only epidermis of RCG. The other peak is shown lower absorption rate on the epidermis of RCG than that of healthy ginseng. Also, FT/IR spectra of the mixture of carboxym-ethylcellulose (CMC) and iron (Fe$\^$3+/) were very similar to RCG spectrum profiles. One of a interesting fact is that the contents of phenolic compounds at the epidermis of healthy ginseng were highest. The results of these experiments sup-port the RCP was closely related with the chemical interaction between inorganic elements (Fe) of rhizosphere and organic matters (cellulose, cellobiose, cell sap, etc.) of ginseng roots.

• Journal of Institute of Convergence Technology
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• v.6 no.2
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• pp.35-40
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• 2016

Ignitor tip is a component of burner to start the burning process in power plant. This is used to ignite the coal to a constant operating state by fuel mixed with air and kerosene. This component is composed of three components so that air and kerosene are mixed in the proper ratio and injected uniformly. Because the parts with the designed shape are manufactured in the machining process, they have to be made of three parts. These parts are designed to have various functions in each part. The mixing part mixes the supplied air and kerosene through the six holes and sends it to the injecting part at the proper ratio. The inject part injects mixed fuel, which is led to have a constant rotational direction in the connecting part, to the burner. And the connecting plate that the mixed fuel could rotate and spray is assembled so that the flame can be injected uniformly. But this part causes problems that are worn by vibration and rotation because it is mechanically assembled between the mixing part and the inject part. In this study, 3D printing method is used to integrate a connecting plate and an inject part to solve this wear problem. The 3D printing method could make this integrated part because the process is carried out layer by layer using a metal powder material. The part manufactured by 3D printing process should perform the post process such as support removal and surface treatment. However, while performing the 3D printing process, the material properties of the metal powders are changed by the laser sintering process. This change in material properties makes the post process difficult. In consideration of these variables, we have studied the optimization of manufacturing process using 3D printing method.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.74-79
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• 1994

The characteristics of the type I and type II SHG in LiB305 crystals grown by TSSG method have been investigated using 1064 nm beam from a Q-switched Nd:YAG laser. The measured phase matching angles and angular acceptance bandwidths were $\theta_m=90^{\circ}, \phi_m=11.6^{\circ}$, <$\delta\theta_{int}L_{1/2}=3.3^{\circ}-cm^{1/2}, \theta\phi_{int}L=0.27^{\circ}-cm^{1/2}$ for type I SHG and $\theta_m=20^{\circ}, \phi_m=90^{\circ}$, TEX>$\delta\theta_{int}L_=0.65^{\circ}-cm, \theta\phi_{int}L^{1/2}=3.5^{\circ}-cm^{1/2}$ for type II SHG, respectively. Thp. type I NCPM temperature of 1064 nm beam was found to be $149^{\circ}C$ with the temperature bandwidth $\DeltaTL$of $4.8^{\circ}C-cm$. An energy conversion efficiency of about 1.8% with 2.6 mm thick LBO crystal at an incident power of TEX>$171 MW/\textrm{cm}^2$ was demonstrated. The measured $d_{32} was 0.74\pm0.05 pm/V$..

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.