• Title/Summary/Keyword: laser device

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A signal processing technique for interferometric fiber-optic sensors (간섭형 광섬유센서의 신호처리 기법)

  • 예윤해
    • Korean Journal of Optics and Photonics
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    • v.6 no.4
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    • pp.365-372
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    • 1995
  • A signal processing technique for interferometric fiber-optic sensors is proposed. It does not require a any special optic components such as phase modulator, $3times3$ couplers,to obtain the full sensitivity of the interferometer. Instead, it requires a reference interferometer for phase referencing and a reference mirror for intensity referencing, but intensity referencing can be done without using the r reference mirror. The new technique utilizes the frequency chirping of the laser diode to process t the sensor signal with both wide dynamic range and high sensitivity of the interferometer. It was a applied to an internal-mirrored FP interferometric temperature sensor to obtain the system noise of $4\times10^{-3\circ}C$ from I cm FP Interferometor sensor device.

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Fabrication of Single Crystal Silicon Micro-Tensile Test Specimens and Thin Film Aluminum Markers for Measuring Tensile Strain Using MEMS Processes (MEMS 공정을 이용한 단결정 실리콘 미세 인장시편과 미세 변형 측정용 알루미늄 Marker의 제조)

  • 박준식;전창성;박광범;윤대원;이형욱;이낙규;이상목;나경환;최현석
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.285-289
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    • 2004
  • Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

Properties and Application of Metal Sulfide Powder

  • Park, Dong-Kyu;Bae, Sung-Yeal;Ahn, In-Shup;Jung, Kwang-Chul
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.918-920
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    • 2006
  • Metal sulfide powders such as MnS, $MoS_2$ and FeS are simply used to the machinery processing improvement agent and solid lubricant in powder metallurgy industrial. And then, metal sulfide powders have received relatively little attention from powder metallurgy. Recently, the portable machine is one of the important interfaces between human or human and electronic machine. With the increase of the intelligent activity, the social and industrial demands for information display device and power source are increasing. The transition metal sulfide materials (FeS, ZnS) have received considerable attention due to the large variety of its electric, optical and magnetic properties. Among the metal sulfide, $FeS_2$ is appealing superior material for applications in $Li-2^{nd}$ battery because of high capacity. ZnS is also a famous phosphor material with various luminescence properties, such as photoluminescence (PL) and electroluminescence (EL). So generally used in the fields of display, sensors and laser. Metal sulfide materials, therefore, are provided for most widely application in all industries. In recent years, material researchers have become increasingly interested in studying with synthesis of metal sulfide.

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A Study on the Flue Gas Mixing for the Performance Improvement of De-NOx plant (배연탈질설비의 성능향상을 휘한 가스혼합에 관한 연구)

  • 류병남
    • Journal of Advanced Marine Engineering and Technology
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    • v.23 no.4
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    • pp.462-472
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    • 1999
  • De-NOx facility using Selective Catalytic Reduction method is the most widely applied one that removes NOx from flue gas emitted from combustion facility such as boiler for power generation engine incinerator etc. Reductant $NH_3\;or\;NH_4OH$ is sprayed into flue gas to convert NOx into $H_2O$ and $N_2.$ Good mixing between flue gas and $NH_3$ is the most important factor to increase reduction in catalytic layer and to reduce unreacted NH3 slip. Therefore the development of mixer device for mixing effect is one of the important part for SCR facility. Objectives of this study are to investigate the relation between flow and concentration field by observation at the wake of delta-wing type mixer. At the first stage qualitative measurement of flow field is conducted by flow visualization using laser light sheet in lab. scale wind tunnel. Also we have conducted the quantitative analysis by comparing flow field measurement using LDV with numerical simulation. On the basis of qualitative and quantitative analysis we investigate the dis-tribution of flow and concentration in flow model facility. The results of an experimental and compu-tational examination of the vortex structures shed from delta wing type vortex generator having $40^{\circ}$ angle of attack are presented, The effects of vortex structure on the gas mixing is discussed, too.

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Study on Macroscopic Spray and Spray Pattern Characteristics of Gasoline Direct Injection Injector for the Variation of Injection Pressure (분사압력 변화에 따른 가솔린 직접분사 인젝터의 거시적 분무와 분무패턴 특성에 관한 연구)

  • Park, Jeonghyun;Park, Suhan
    • Journal of ILASS-Korea
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    • v.23 no.1
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    • pp.22-29
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    • 2018
  • The purpose of this study is to investigate the macroscopic spray characteristics and spray pattern of a gasoline direct injection (GDI) injector according to the increase of injection pressure. The macroscopic spray characteristics, such as a spray tip penetration and spray angle, were measured and analyzed from the frozen spray images, which are obtained from the spray visualization system including the high-speed camera, light-source, long-distance microscope (LDM). The spray pattern was analyzed through the deviation of the center of the spray plum and images were acquired using Nd: YAG Laser and ICCD(Intensified charge coupled device) camera. From the experiment and analysis, it revealed that the injection pressure have a significant influence on the spray tip penetration and spray pattern. However, the injection pressure have little influence on the spray angle. The increase of injection pressure induced the reduction of a closing delay. In addition, the deviation of spray center increase with the increase of injection pressure and the distance from a nozzle tip.

Fabrication of the Two-Step Crystallized Polycrystalline Silicon Thin Film Transistors with the Novel Device Structure (두 단계 열처리 방법으로 결정화된 새로운 구조의 다결정 실리콘 박막 트렌지스터의 제작)

  • Choi, Yong-Won;Wook, Hwang-Han;Kim, Yong-Sang;Kim, Han-Soo
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1772-1775
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    • 2000
  • We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

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Transparent ZnO thin film transistor with long channel length of 1mm (1mm의 채널을 갖는 ZnO 투명 박막 트랜지스터)

  • Lee, Choong-Hee;Ahn, Byung-Du;Oh, Sang-Hoon;Kim, Gun-Hee;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.34-35
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    • 2006
  • Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

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Design and Construction of a High Temperature Creep Tester for Thin Film Specimens (박막시험편용 고온 크리프 시험기의 설계 및 제작)

  • Ko, Gyoung-Dek;Lee, Sang-Shin;Kang, Ki-Ju
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.2 s.257
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    • pp.253-259
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    • 2007
  • A new material tester has been developed to measure mechanical properties of thin film specimens at high temperature. It is useful for observing oxide film growth or local deformation on the surface, and for measuring creep strength. Main characteristics of the tester is as follows; First, high temperature is achieved by Joule heating generated by electricity passing through the specimen, which does not need to enclose the specimen by a furnace or a heating chamber. The exposed specimen enables one to observe the surface during the test. Because the overall size of the test rig is compact, the whole test rig can be placed in a chamber for environmental controlled tests. The loading device is from a level scales. Not only static load with fixed counter weight, but also variable load by moving counter weight controlled remotely can be applied for an ordinary creep test and creep-fatigue test, respectively. The detail of the construction, operation principle, and the specification are described. And also, an example of test result obtained using the creep tester is presented.

Preparation of Alginate-fibroin Beads with Diverse Structures (다양한 구조를 가진 알긴산-피브로인 비드 제조)

  • Lee, Jin-Sil;Lee, Shin-Young;Hur, Won
    • KSBB Journal
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    • v.26 no.5
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    • pp.422-426
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    • 2011
  • Alginate bead has been supplemented with various polymers to control permeability and to enhance mechanical strength. In this report, fibroin-reinforced alginate hydrogel was prepared, in which spatial localization of fibroin molecules was investigated. Confocal laser scanning microscopy revealed that fibroin molecules formed a fibrous network in the alginate-fibroin beads, which was expected to enhance mechanical strength as same as in many composite materials. Uniaxial compression test showed that fibroin-reinforced alginate beads had increased mechanical strength only after methanol treatment that caused ${\beta}$-sheet formation among fibroin molecules. Simultaneous curing and dialysis of alginate beads were carried out to remove excesscalcium but to retain fibroin in the dialysis chamber, which fabricated beads without internal fibrous fluorescent stains. Fibroin molecules were only found beneath the surface of the beads. The fibroin-diffused shell was further processed to form a thick wall after drying or was mobilizedto the centre of the bead by methanol treatment. Accordingly, the structure analyses provide processing methods of fibroin to form a wall or center clumps, which could be applied to design controlled delivery device.

Enhanced dielectric properties of (Ba.Sr)$TiO_3$ thin films applicable to tunable microwave devices (Tunable microwave device에 사용될 수 있는 (Ba,Sr)$TiO_3$ 박막의 유전특성 향상에 관한 연구)

  • 박배호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.73-76
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    • 2001
  • We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

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