• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.271-272
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• 2007

In heterodyne laser interferometer, we use a phase difference between two beams to calculate target's length. However, there exist an nonlinearity error when measuring length in nanoscale. It is caused from frequency-mixed problem of two polarized beams, called cross talks. This fact limits the usefulness of an laser interferometer. To compensate the error, we propose a WLS(weighted least square) algorithm, which will reduce nonlinearity error and make a better optimization in heterodyne laser interferometer.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.6
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• pp.917-922
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• 2013

In this paper, we propose a smoke detection system in order to detect a fire in a wide space, such as tunnel, airports using infra-red and visible laser. The proposed smoke detection system is composed of infra-red laser transmitter and receiver, visible laser and Zigbee wireless communication network. A visible laser is used to match transmitter and receiver and Zigbee network is utilized to propagate warnings of fire. If smoke is appeared between transmitter and receiver, received signals are decreased and it can be considered as occurring smoke. As IR laser transmitter and receiver are separated by long distance, it is difficult to match due to large variations caused by small change of direction. In this paper, it is proposed to match effectively using visible laser. When smoke is detected, warning informations are propagated by Zigbee network in the developed smoke detection system.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• Proceedings of the KIEE Conference
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• 2003.07d
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• pp.2489-2491
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• 2003

In this study, we implement the laser pattern controller using function generator IC. Overall system consists of : (1) laser excitation circuit and laser tube, (2) two small mirrors to reflect laser beam on the screen, (3) two small motors for X, Y axis enabling each attached mirrors to rotate, (4) controller for motor control and user interface, (5) system power. We explain the architecture of the system and required theory to implement the system. Finally, experimental results are illustrated to show the performance of the system.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.439-441
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• 2012

A new wavelength tunable laser source based on a self-seeded F-P LD for a WDM-PON system has been proposed in this paper. The proposed laser source has a merit of the wavelength tunable range of approximately 20 nm with very simple setup. The measured minimum relative intensity noise(RIN) was approximately -124 dB/Hz and the possibility of 10 Gb/s external modulation was showed.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.4
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• pp.85-90
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• 2014

We realized a wireless multiple integrated laser engagement system composed of personal area network using Zigbee. The wireless laser detector had function of analog signal processor, decoder and wireless communication. However, it should consume low power and be small and light in order to be attached to a soldier's body. The decoder was realized in software to be small and light. We induced low power consumption as reducing the load of system using a narrow band optical filter. The fabricated wireless laser detector functioned well in optically noisy environment. Although the communication to the player unit through the wireless personal area network was dependent on the attachment place it was perfectly worked with transmission power of -40.2dBm or more.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.36-40
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• 2017

With an attempt to enhance the visibility of laser beam, we have investigated a black matrix with scattering particles by ray tracing simulations. As the scattering particle density is increased, the detected power by the receiver is increased, thereby enhancing the visibility. In reality, the visibility is reduced with increasing incident angle (away from the normal incidence) of laser beam, a phenomenon also observed by ray tracing simulations. It is due to the fact that the mean path is increased within a highly absorptive BM layer or a smaller number of rays hit the BM area when the incident angle is high. Embedding a number of scattering particles into BM may bring in crosstalk among pixels. However, it is negligible because scattered rays inside highly absorptive BM are re-scattered due to the high scattering particle density, decreasing the power of scattered rays into the active areas.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.7
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• pp.65-72
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• 2009

Laser interferometry is widely used as a measuring system in many fields because of its high resolution and its ability to measure a broad area in real-time all at once. In conventional laser interferometry, for example out-of-plane ESPI (Electronic Speckle Pattern Interferometry), in plane ESPI, shearography and holography, it uses PZT or other components as a phase shift instrumentation to extract 3-D deformation data, vibration mode and others. However, in most cases PZT has some disadvantages, which include nonlinear errors and limited time of use. In the present study, a new type of laser interferometry using a laser diode is proposed. Using Laser Diode Sinusoidal Phase Modulating (LD-SPM) interferometry, the phase modulation can be directly modulated by controlling the laser diode injection current thereby eliminating the need for PZT and its components. This makes the interferometry more compact. This paper reports on a new approach to the LD (Laser Diode) Modulating interferometry that involves four-frame phase shift method. This study proposes a four-frame phase mapping algorithm, which was developed to have a guaranteed application, to stabilize the system in the field and to be a user-friendly GUI. In this paper, the theory for LD wavelength modulation and sinusoidal phase modulation of LD modulating interferometry is shown. Using modulating laser and research of measurement algorithm does comparison with existent ESPI measurement algorithm. Algorithm measures using GPIB communication through most LabVIEW 8.2. GPIB communication does alteration through PC. Transformation of measurement object measures through modulating laser algorithm that develops. Comparison of algorithm of modulating laser developed newly with existent PZT algorithm compares transformation price through 3-D. Comparison of 4-frame phase mapping, unwrapping, 3-D is then introduced.