• Title/Summary/Keyword: laser bonding

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고온용 RFID 태그 패키징 및 접합 방법 (Bonding Method and Packaging of High Temperature RFID Tag)

  • 최은정;유대원;변종헌;주대근;성봉근;조병록
    • 한국통신학회논문지
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    • 제35권1B호
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    • pp.62-67
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    • 2010
  • 본 연구는 다양한 산업 환경에 적용되는 RFID 태그 개발에 있어 RFID 태그 패키징 개발과 RFID 태그 플립칩(flip chip) 접합 방법이 산업 환경 맞춤형 RFID 태그 개발에 미치는 영향에 대해 분석하였다. RFID 태그 플립칩(flip chip) 접합은 와이어 접합(wire bonding), 초음파 접합(ultrasonic bonding), 열융착 접합(heat plate bonding), 레이저 접합(laser bonding)으로 구분되어 있으며, 이런 접합 방법은 다양한 RFID 태그 개발의 적용 환경에 따라 적합한 접합 방법이 있음을 본 연구를 통해서 알 수 있었다. 극고온, 극저온, 다습, 고내구성 등 다양한 산업 환경 중 극고온 환경에서의 RFID 태그 개발은 빛 에너지를 흡수하여 열 에너지로 전환하는 레이저 접합 방법과 직접적인 열 전달 방식인 열융착 접합 방법은 접속 재료인 ACF의 손상으로 인해 부적합하고, 와이어를 이용하여 직접 범프와 패턴을 연결하는 와이어 접합 방법이 적합함을 알 수 있었다.

다차원 이종 복합 디바이스 인터커넥션 기술 - 레이저 기반 접합 기술 (Laser-Assisted Bonding Technology for Interconnections of Multidimensional Heterogeneous Devices)

  • 최광성;문석환;엄용성
    • 전자통신동향분석
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    • 제33권6호
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    • pp.50-57
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    • 2018
  • As devices have evolved, traditional flip chip bonding and recently commercialized thermocompression bonding techniques have been limited. Laser-assisted bonding is attracting attention as a technology that satisfies both the requirements of mass production and the yield enhancement of advanced packaging interconnections, which are weak points of these bonding technologies. The laser-assisted bonding technique can be applied not only to a two-dimensional bonding but also to a three-dimensional stacked structure, and can be applied to various types of device bonding such as electronic devices; display devices, e.g., LEDs; and sensors.

마그네틱 펄스 용접 및 성형기공 (Magnetic Pulse Solutions)

  • 박삼수
    • 한국레이저가공학회:학술대회논문집
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    • 한국레이저가공학회 2006년도 추계학술발표대회 논문집
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    • pp.53-81
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    • 2006
  • A COG(Chip on Glass) bonding process that is one of display packaging technology and bonds between driver IC chip and a glass panel using ACF(Anisotropic Conductive Film)has been investigated by using diode laser. This method is possible to raise cure temperature of ACF within one second and can reduce the total process time for COG bonding by a conventional method such as a hot plate. Also we can get good pressure mark on the surface of electrodes and higher bonding strength than that by convention method. Results show that laser COG bonding can give low pressure bonding and decrease a warpage of panel. We believe that it can be applied to fine pitch module.

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Collective laser-assisted bonding process for 3D TSV integration with NCP

  • Braganca, Wagno Alves Junior;Eom, Yong-Sung;Jang, Keon-Soo;Moon, Seok Hwan;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
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    • 제41권3호
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    • pp.396-407
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    • 2019
  • Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

광통신 III-V/Si 레이저 다이오드 기술 동향 (III-V/Si Optical Communication Laser Diode Technology)

  • 김호성;김덕준;김동철;고영호;김갑중;안신모;한원석
    • 전자통신동향분석
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    • 제36권3호
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    • pp.23-33
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    • 2021
  • Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

Evaluation of different enamel conditioning techniques for orthodontic bonding

  • Turkoz, Cagri;Ulusoy, Cagri
    • 대한치과교정학회지
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    • 제42권1호
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    • pp.32-38
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    • 2012
  • Objective: The aim of this study was to compare the effects of different enamel conditioning techniques for bracket bonding. Methods: Ninety-one human premolars were randomly divided in six groups of 15 specimens each. The enamel surfaces of the teeth were etched with 35% orthophosphoric acid in Group 1, with a self-etching primer in Group 2, sandblasted in Group 3, sandblasted and etched with 35% orthophosphoric acid in Group 4, conditioned by Er:YAG laser in Group 5 and conditioned by Er:YAG laser and etched with 35% phosphoric acid gel respectively in Group 6. After enamel conditioning procedures, brackets were bonded and shear bonding test was performed. After debonding, adhesive remnant index scores were calculated for all groups. One tooth from each group were inspected by scanning electron microscope for evaluating the enamel surface characteristics. Results: The laser and acid etched group showed the highest mean shear bond strength (SBS) value ($13.61{\pm}1.14$ MPa) while sandblasted group yielded the lowest value ($3.12{\pm}0.61$ MPa). Conclusions: Although the SBS values were higher, the teeth in laser conditioned groups were highly damaged. Therefore, acid etching and self-etching techniques were found to be safer for orthodontic bracket bonding. Sandblasting method was found to generate inadequate bonding strength.

탄소복합재 접착공정을 위한 CFRP의 레이저 표면처리 기법의 적용 (Application of Laser Surface Treatment Technique for Adhesive Bonding of Carbon Fiber Reinforced Composites)

  • 황문영;강래형;허몽영
    • Composites Research
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    • 제33권6호
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    • pp.371-376
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    • 2020
  • 접착강도는 표면처리 기술을 통해 향상시킬 수 있다. 가장 일반적인 방법은 기계적인 결합력을 향상시킬 수 있는 접착 표면의 변화이다. 본 연구는 접착면의 레이저 표면 처리가 기계적 결합력에 미치는 영향과 탄소섬유 강화 복합재료(CFRP)의 접착 결합에 대해 설명한다. 1064 nm의 레이저를 활용하여 표면 조도를 패턴화했다. 레이저 샷의 수, 패턴의 방향, 길이가 CFRP/CFRP 단일 조인트의 접착력에 미치는 영향을 인장 시험을 통해 조사했다. ASTM D5868에 따른 시험을 수행하였으며, 파단 후 손상된 표면을 분석하여 결합 메커니즘을 결정했다. 접착 강도의 증가를 위해서는 CFRP 표면에 최적화된 레이저 샷의 수와 조도 깊이가 구성되어야 한다. 인장방향에서의 전단응력을 고려할 때, 접착층의 파단 경로를 길어지게 하는 45°의 방향의 조도가 접착강도의 증가를 야기했다. 그러나 레이저에 의한 조도의 길이는 접착 강도에 크게 영향을 주지 못했다. 레이저를 이용한 접착면의 표면처리는 기계적 결합 메커니즘을 확보하고 CFRP 접착 조인트의 접착 강도를 향상시키는 적합한 방법이라는 결론을 도출할 수 있다. 레이저 처리를 이용한 이점을 완전히 이용하기 위해서는 최적화된 레이저 공정 변수에 대한 연구가 반드시 필요하다.