• Journal of Korean Society of Steel Construction
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• v.23 no.6
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• pp.647-657
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• 2011

This paper describes the moment capacity of flexural members with local buckling based on a series of FE and experiment results. Thin-walled flexural members undergo local, lateral-torsional, or interactive buckling according to the section geometries and lateral boundary conditions. Flexural members with large width-to-thickness ratios in the flanges or the web may undergo local buckling before lateral-torsional buckling. Local buckling has a negative effect on the flexural strength based on the lateral-torsional buckling of flexural members. This phenomenon should be considered in the estimation of the flexural strength of thin-walled sections. Flexural members with various width-to-thickness ratios in their flanges and web were analyzed. Initial imperfections in the local buckling mode, and residual stresses, were included in the FE analyses. Simple bending moment formulae for flexural members were proposed based on the FE and test results to account for local and lateral-torsional buckling. The proposed bending moment formulae for the thin-walled flexural members in the Direct Strength Method use the empirical strength formula and the grosssection modulus. The ultimate flexural strengths predicted by the proposed moment formulae were compared with the AISC (2005), Eurocode3 (2003), and Korean Highway Bridge Design Specifications (2010). The comparison showed that the proposed bending moment formulae can reasonably predict the ultimate moment capacity of thin-walled flexural members.

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.67-67
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• 2017

We developed the breeding materials with diverse grain size and shape in japonica rice. Grain size and shape are important factors affecting consumer preference and choice. However, most of Korean japonica rice cultivars have small, short, and round grain. To diversify the grain size and shape of japonica rice, we conducted the breeding program using donor parents, Jizi1560 and Jizi1581. Jizi1560 and Jizi1581 are japonica germplasm with extremely large grain. Four crosses between the each donor parents and high yielding japonica rice cultivars, Deuraechan and Boramchan, were constructed and then anther culture method was applied. We obtained 290 doubled-haploid (DH) lines with appropriated morphological traits and selected 91 DH lines with diverse grain size and shape. The grain related-traits of the selected DH lines showed a higher diversity when compared with 319 cultivars developed by NICS (264 japonica, 13 black, and 32 Tongil type cultivars). We designated the selected DH lines, four parents, and Daeripbyeo 1, large grain japonica cultivar, as the breeding materials for further analysis. The breeding materials were classified into five groups, A to E, based on the grain-related traits. Group A (including Jizi1581) and Group B (including Daeripbyeo 1) showed similar grain width, whereas Group A exhibited longer grain length and heavier grain weight. Group C (including Deuraechan and Boramchan) showed shorter and rounder grain shape and smaller grain size than any other groups. Group D including solely Jizi1560 had extremely large grain, such as the longest grain length, width, and thickness and heaviest grain weight. Group E including only two DH lines had long and slender grain shape, so that showed the highest ratio of length to width. The grain size and shape of the breeding materials exhibited beyond the characteristics of previously developed Korean japonica cultivars. The breeding materials will be applied in the breeding programs to diversify the grain size and shape of japonica rice.

• Steel and Composite Structures
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• v.2 no.3
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• pp.171-194
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• 2002

In this paper, the behaviour of axially loaded partially encased composite columns made with light welded H steel shapes is examined using ABAQUS finite element modelling. The results of the numerical simulations are compared to the response observed in previous experimental studies on that column system. The steel shape of the specimens has transverse links attached to the flanges to improve its local buckling capacity and concrete is poured between the flanges only. The test specimens included 14 stubcolumns with a square cross section ranging from 300 mm to 600 mm in depth. The transverse link spacing varied from 0.5 to 1 times the depth and the width-to-thickness ratio of the flanges ranged from 23 to 35. The numerical model accounted for nonlinear stress-strain behaviour of materials, residual stresses in the steel shape, initial local imperfections of the flanges, and allowed for large rotations in the solution. A Riks displacement controlled strategy was used to carry out the analysis. Plastic analyses on the composite models reproduced accurately the capacity of the specimens, the failure mode, the axial strain at peak load, the transverse stresses in the web, and the axial stresses in the transverse links. The influence of applying a typical construction loading sequence could also be reproduced numerically. A design equation is proposed to determine the axial capacity of this type of column.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.10 s.175
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• pp.195-201
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• 2005

A laterally driven electromagnetic microactuator (LaDEM) is presented, and a micro-optical switch is designed and fabricated as a possible application. LaDEM provides parallel actuation of the microactuator to the silicon substrate surface (in-plane mode) by the Lorentz force. Poly-silicon-on-insulator (Poly-SOI) wafers and a reactive ion etching (RIE) process were used to fabricate high-aspect-ratio vertical microstructures, which allowed the equipment of a vertical micro mirror. A fabricated arch-shaped leaf spring has a thickness of $1.8{\mu}m$, width of $16{\mu}m$, and length of $800{\mu}m$. The resistance of the fabricated structure fer the optical switch was approximately 5$\Omega$. The deflection of the leaf springs increases linearly up to about 400 mA and then it demonstrates a buckling behavior around the current value. Owing to this nonlinear phenomenon, a large displacement of $60{\mu}m$ could be measured at 566 mA. The displacement-load relation and some dynamic characteristics are analyzed using the finite element simulations.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.57-67
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• 2002

Increased signal speed can be obtained in three ways: changing the layout and/or the ratio of the width to thickness of the metal lines, decreasing the specific resistance of the interconnect metal, and decreasing the dielectric constant of the insulating material (intermetal dielectric). Further advancement cannot be expected from changing layout or decreasing specific resistance. The only alternative is to use an insulating material with a lower dielectric constant than other ones used presently. A large variety of polymers has been proposed for use as materials with low dielectric constants for applications in microelectronics. In this review, the properties of selected polymers as well as various fabrication methods for polymer thin films are discussed. Based on the properties described so far, and the requirements for applications as intermetal dielectric material, the possibilities for further developments also are discussed.

• The Journal of the Korea Contents Association
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• v.12 no.6
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• pp.353-360
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• 2012

The purpose of this study was to determine whether there are relationships between radiologic parameters for osteoporosis by the proximal femur radiograhps and bone mineral density, as assessed by Dual Energy X-ray Absorptiometry(DEXA). Proximal femur anterior-posterior projection were taken from 112 individuals who undergoing DEXA. Radiographic parameters including canal-to-calcar ratio(CCR) and cortical thickness indices(CTI) were measured and compared with bone mineral density($g/cm^2$), T-score. The intramedullary femoral canal width(FW) and calcar width(CW) at osteoporosis group was significantly larger than that of control group. The CCR were correlated negatively with bone mineral density($g/cm^2$)(r=-0.340, p<0.01), and the CTI were correlated positively(r=0.624). The diagnostic accuracy of CCR for osteoporosis was 63.4%, and kappa value was 0.271. And the accuracy of CTI was 67.0%, and kappa value was the level of fair agreement(${\kappa}$=0.258). The proximal femur with large CCR and small CTI had lower T-scores. When evaluating proximal femur anterior-posterior radiographs, those patients with the thinnest femur diaphyseal cortices should be referred for further osteoporosis investigation.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.2
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• pp.257-268
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• 1994

An experimental study was carried out to elicit important factors causing cracks and rupture of steel members and their elements under imposed large repeated deformations, and of the quantitative relationships among the important physical factors leading to failure. Each of twenty-eight angles and nine thin-plates served as the specimen and was subjected to repeated axial load after undergoing inelastic buckling. Particular attention was paid to the effects of loading pattern, failure mode and cross-sectional shape on the very-low-cycle failure behavior under loading repetitions of the order of a few to twenty. The experimental results show that energy dissipation capacity depends heavily on the entire history of loading, the failure mode, the slenderness ratio and the width-to-thickness ratio. No simple quantitative relations were observed between the initiation of the visible cracks or rupture and the energy dissipation capacity. The maximum values of residual "net" strains are found to range from 25% to 40%, independent of the test parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.63-67
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• 2015

In this study, we demonstrate the change of optical characteristic by thickness of metal deposition on nano metal grid polarizer film fabrication. Nano metal grid polarizer film consists of aluminium grid polarizer layer on PET (Polyethylene phthalate) substrate. We aim at metal grid layer formation for the large nano wire grid polarizer fabrication. we draw process conditions of the nano metal grid polarizer film fabrication to improve transmittance and extinction ratio and Nano wire grid polarizer film (NWGP) film is fabricated with 140 nm pitch, 70 nm width, and 70 nm depth of metal grid on optimum design conditions. As a result, we get high optical properties of nano wire grid polarizer which is the maximum transmittance of 80% and the extinction ratio of $10^6$ at 600 nm wavelength respectively.