• 제목/요약/키워드: large plasma source

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대기압 플라즈마와 응용 (Atmospheric Plasma and Its Applications)

  • 엄환섭
    • 한국진공학회지
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    • 제15권2호
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    • pp.117-138
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    • 2006
  • 지표면에서 플라즈마는 전기방전에 의하여 만들어낸다. 그래서 대부분의 플라즈마 발생은 1백만분의 1기압보다 더 낮은 기압에서 발생하고 있었다. 그러나 많은 플라즈마 응용은 고기압에서 발생한 플라즈마를 요구하고 있다. 진공펌프와 같은 고가의 장비를 피하기 위하여 과학자들은 1기압이나 그이상의 압력에서 플라즈마를 발생하는 연구를 하기 시작했다. 많은 량의 제료 공정, 환경보호와 개선, 그리고 고효율 에너지 창출과 이용 등의 분야에 플라즈마를 사용할 때에는 오직 더 많은 량의 플라즈마를 더욱 값싸게 만들 때에만 가능한 것이다. 우리는 따라서 고기압에서 플라즈마를 만들어내는 새로운 방법을 개발하고 이러한 플라즈마가 21세기 산업에 적용될 수 있는 새로운 기반을 구축하는 연구를 수행하고 있다. 이러한 기술은 미래의 재료 공정이나, 환경 그리고 에너지 분야에 지대한 영향을 미칠 것으로 생각한다.

펄스 YAG 레이저 용접시 유기하는 플라즈마의 스펙트럼선 동정과 발광특성 (Spectral Line Identification and Emission Characteristics of the Laser-Induced Plasma in Pulsed Nd:YAG Laser Welding)

  • 김종도
    • Journal of Advanced Marine Engineering and Technology
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    • 제23권3호
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    • pp.360-368
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    • 1999
  • The paper describes spectroscopic characteristics of plasma induced in the pulsed YAG laser welding of alloys containing a large amount of volatile elements. The authors have conducted the spectroscopic analyses of laser induced Al-Mg alloys plasma in the air and argon atmosphere. In the air environment the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn and singly ionized Mg lines as well as the intense molecular spectra of ALO and MgO formed by chemi-cal reactions of evaporated Al and Mg atoms from the pool surface with oxygen in the air. In argon atmosphere MgO and AlO spectra vanished but AlH spectrum was detected. the hydrogen source was presumable hydrogen dissolved in the base metals water absorbed on the surface oxide layer or $H_2$ and $H_2O$ in the shielding gas. The resonant lines of Al and Mg were strongly self-absorbed in particular self-absorption of the Mg line was predominant. These results show that the laser induced plasma was made of metallic vapor with relatively low temperature and high density.

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A Review on Fluorescent Lamps Having Noncircular Cross-sections

  • Ko, Jae-Hyeon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1165-1168
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    • 2005
  • We review discharge characteristics of fluorescent lamps having noncircular cross sections. The developmental and theoretical history of noncircular cross-section lamps is summarized chronologically. In particular, discharge characteristics of noncircular cross-section lamps will be summarized and analyzed including plasma contraction, electron temperature, and ambipolar diffusion loss, which might give us some insights into the way to develop more efficient and uniform flat fluorescent lamps, which have recently arisen as a new light source of large-size backlight units for LCD TV applications.

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Xe 플라즈마 평판형 광원의 전극 구조에 따른 전기.자기적 특성 (Electrical and Electromagnetic Characteristics of Xe Plasma Flat Lamp by Electrode Structure)

  • 최용성;문종대;이경섭;이상헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.82-85
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    • 2006
  • As a display becomes large recently, Acquisition of high luminance and Luminance uniformity is becoming difficult in the existing CCFL or EEFL backlight system. So, study for a performance enhancement has enforced. but lamp development of flat type is asked for high luminance and a luminance uniformity security in of LCD and area anger trend ultimately. In this paper, we changed a tip shape of an electrode for production by the most suitable LCD backlight surface light source, and confirmed discharge characteristic along discharge gas pressure and voltage, and confirmed electric field distribution and discharge energy characteristic through a Maxwell 2D simulation. Therefore the discharge firing voltage characteristic showed a low characteristic than a rectangular type and round type in case of electrode which used tip of a triangle type, and displayed a discharge electric current as a same voltage was low.

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플라즈마 기상 화학 증착법을 이용한 탄소나노튜브의 선택적 수직성장 기술 (Selective Growth of Freestanding Carbon Nanotubes Using Plasma-Enhanced Chemical Vapor Deposition)

  • 방윤영;장원석
    • 한국정밀공학회지
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    • 제24권6호
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    • pp.113-120
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    • 2007
  • Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.

Preparation and Electric Properties of PbTiO$_3$Thin Films by Low-pressure Thermal Plasma Deposition

  • Nagata, Shingo;Wakiya, Naoki;Shinozaki, Kazuo;Mizutani, Nobuyasu
    • The Korean Journal of Ceramics
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    • 제7권1호
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    • pp.20-25
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    • 2001
  • PbTiO$_3$ thin films were prepared by low-pressure thermal plasma deposition on (100)Pt/(100)MgO substrates. Mist of source material in which metal alkoxides are dissolved in 2-methoxyethanol was introduced into plasma through heating furnace and deposited onto substrates at $600^{\circ}C$. As-deposited PbTiO$_3$/Pt/MgO thin film prepared at 1.33$\times$10$^4$ Pa was grown epitaxially, but was consisted of many rectangular shaped grains, with many grain boundaries and it was impossible to measure electric properties. As-deposited film prepared at 1.00$\times$10$^4$ Pa showed weak peaks of X-ray diffraction and the film was not grown epitaxially. On the other hand, the film after annealed at $700^{\circ}C$ showed strong diffraction peaks and epitaxial growth was also observed. For annealed film, moreover, no clear grain boundaries were observed. The value of ${\varepsilon}_r$, tan${\delta}$, Pr and Ec of annealed film were 160, 3.2%, 10.4${\mu}$C.cm$^-2$ and 51.2kV.cm$^-1$, respectively. Since the composition, Pb/Ti, measured by EDS attaching to SEM changed point by point, the distribution of composition in annealed film was investigated and found out several relations between composition and electric properties. At stoichiometric composition, Pr and Ec showed the lowest value and they gradually became large as composition deviated from stoichiometric one. Moreover, the value of ${\varepsilon}_r$ became gradually large as the ratio of Ti became high.

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대면적 증착용 선형 초고주파 플라즈마 장치 제작 및 정전 탐침법을 이용한 Ar 플라즈마 특성 분석과 온도 특성 분석 (Fabrication of Microwave PECVD with Linear Antenna for large-scale deposition processing, and Analysis of Ar plasma characteristics using Electrostatic Probe and Temperature Characteristics)

  • 한문기;서권상;김동현;이호준
    • 전기학회논문지
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    • 제64권3호
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    • pp.422-428
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    • 2015
  • A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.

Effect of Dietary Energy Level on Nutrient Utilization, Insulin-like Growth Factor-I and Insulin-like Growth Factor Binding Protein-3 in Plasma, Liver and Longissimus dorsi Muscle in Growing-finishing Pigs Using Soybean Oil as an Energy Source

  • Du, W.;Li, Y.J.;Zhao, G.Y.;Yin, Y.L.;Kong, X.F.
    • Asian-Australasian Journal of Animal Sciences
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    • 제22권8호
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    • pp.1180-1185
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    • 2009
  • Two experiments were carried out to study the effects of dietary energy level on nutrient digestion, nitrogen (N) utilization, growth performance, insulin-like growth factor-I (IGF-I), and insulin-like growth factor binding protein-3 (IGFBP-3) in plasma, liver and longissimus dorsi muscle in growing-finishing pigs. In experiment 1 (Exp 1), 15 castrated male pigs (Duroc${\times}$Landrace${\times}$Large White) (Body weight, BW, 55.6${\pm}$1.8 kg) were divided into three groups and fed rations containing 13.33, 14.87 and 17.35 MJ digestible energy (DE)/kg as treatments I, II and III, respectively, using soybean oil as an energy source. The experiment lasted 8 days and faecal and urinary samples were collected during the last 3 days. The results showed that the digestibility of dry matter (DM), energy and N was increased from treatments I to III (p<0.01). N-retention and N-retention rate were not influenced by dietary DE level (p>0.05). In experiment 2 (Exp 2), 36 female pigs (Duroc${\times}$Landrace${\times}$Large White) (BW 41.5${\pm}$3.8 kg) were divided into three groups. The pigs were fed with the same three rations used in Exp 1 for 60 days. At the end of Exp 2, eight pigs were selected from each group for blood sampling and 4 pigs for slaughter trial. The results indicated that average daily feed intake (ADFI) and N-intake were significantly decreased (p<0.01), and DE intake (p<0.01) and average daily gain (ADG) (p<0.05) were increased. IGF-I and IGFBP-3 in plasma were increased (p<0.05). No significant differences in IGF-I and IGFBP-3 in liver and longissimus dorsi muscle were found between different treatments. It was concluded that higher dietary DE level improved nutrient digestibility, ADG and feed/gain ratio when soybean oil was used as an energy source in the ration of growing-finishing pigs. No significant differences were found in Nretention and IGF-I and IGFBP-3 in liver and longissimus dorsi muscle between different treatments.

THE NEW TYPE BROAD BEAM ION SOURCES AND APPLICATIONS

  • You, D.W.;Feng, Y.C.;Wang, Y.;Kuang, Y.Z.
    • 한국진공학회지
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    • 제4권S2호
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    • pp.131-138
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    • 1995
  • The broad beam ion sources of hot filament plasma type have widely used for modifications of materials and thin films, and the new type intensive current broad beam metal ion source including reactive gaseous ion beams is needed for preparing the hard coating films such as DLC, $\beta-C_3N_4$ Carbides, Nitrides, Borides etc. Now a electorn beam evaporation(EBE) broad beam metal ion source has been developed for this purpose in our lab. CN film has been formed by the EBE ion source. Study of the CN film shows that it has high hardness(HK=5800kgf/$\textrm {mm}^2$)and good adhesion. This method can widely changes the ratio of C/N atom's concentrations from 0.14 to 0.6 and has high coating rate. The low energy pocket ion source which was specially designed for surface texturing of medical silicon rubber was also developed. It has high efficiency and large uniform working zone. Both nature texturing and mesh masked texturing of silicon rubbers were performed. The biocompatibility was tested by culture of monocytes, and the results showed improved biocompatibility for the treated silicon rubbers. In addition, the TiB2 film synthesized by IBED is being studied recently in our lab. In this paper, the results which include the hardness, thickness of the films and the AES, XRD analysis as well as the tests of the oxidation of high temperature and erosion will be presented.

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여러 질소 플라즈마 상태에서 성장한 wurtzite GaN의 결정특성 (Crystal properties of wurtzite GaN grown under various nitrogen plasma conditions)

  • 조성환;김순구;유연봉
    • 한국진공학회지
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    • 제6권4호
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    • pp.354-358
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    • 1997
  • 다양한 질소 압력, 플라즈마 파워 상태에서 사파이어 기판위에 전자 사이클로트론 공명 MBE로 제작한 wurtzite GaN의 결정특성을 XRD의 반치폭, 주사전자 현미경으로 조 사하였다. 질소 압력은 XRD의 반치폭에 커다란 영향을 미치고 있으며 최적 질소 압력에서 제작한 시료에는 높은 dislocation density를 포함하고 있음을 알았다. 이러한 결과들은 갈륨 질소의 결정질(crystal quality)은 플라즈마 상태에 매우 민감하며 또한 스트레스 완화는 V/ III비에 의존하고 있음을 나타낸다. 그렇지만 사파이어 기판의 nitridation은 스트레스 완화에 커다란 영향을 미치지 않고 있었다.

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