• Journal of Microbiology and Biotechnology
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• v.14 no.5
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• pp.1038-1042
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• 2004

The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.193-198
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• 1990

We constructed Langmuir trough for the ultra-thin films (from a few tens {{{{ ANGSTROM }}) of nonlinear optical organic materials. Surface pressure - area isotherm for the tetracosanoic acid which is a fatty acids, was recorded and Langmuir -Blodgett films was deposited using it. The homogenity was investigated using scanning electron microscopy (SEM).

• Polymer Science and Technology
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• v.3 no.6
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• pp.489-505
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• 1992

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.138-139
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• 1999

• Electrical & Electronic Materials
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• v.11 no.1
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• pp.80-85
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.103-103
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.118-118
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• 1998

• Journal of the Korean Applied Science and Technology
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• v.26 no.4
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• pp.400-406
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• 2009

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.148-153
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• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.228-231
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• 1993

Langmuir-Blodgett(LB) 초박막 MIM구조의 소자에서 직류전압이 발생된다는 것은 이미 잘 알려져 있다. 발생전압의 원인은 LB막과 전극사이의 어떤 화학반응에 의한 것으로 보고되었다. 본 논문에서는 1986년에 제작되어 공기중에 방치된 LB 초박막 시료를 대상으로 실험한 결과, 제작 당시와 동일한 크기의 전압이 발생하고 있음을 확인할 수 있었다. 이때 LB막과 전극의 두께는 각각 20~30.angs. 및 2000.angs.정도이었다.