• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.70-75
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• 2000

The recycled single crystal silicon wafers have been fabricated into solar cells. It can be a solution for the high cost in materials for solar cells and recycling of materials. So, p-type (100) single crystal silicon wafers with high resistivity of $10-14\;{\Omega}cm$ and the thickness of $650\;{\mu}m$ were used for the fabrication of solar cells. Optimistic conditions of formation of back surface field, surface texturing and anti-reflection coating were studied for getting high efficiency. In addition, thickness variation of solar cell was also studied for increase of efficiency. As a result, the solar cell with efficiency of 10% with a curve fill factor of 0.53 was fabricated with the wafers which have the area of $4\;cm^2$ and thickness of $300\;{\mu}m$. According to above results, recycling possibility of wasted wafers to single crystal silicon solar cells was confirmed.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.451-457
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• 1997

The thick films of oxide semiconductors such as $WO_{3}$, $SnO_{2}$ and ZnO for the $NO_{2}$ detection of sub-ppm range have been prepared and their characteristics were investigated. It is showed that the optimum operating temperatures of the sensors are $300^{\circ}C$ and $220{\sim}260^{\circ}C$ for $WO_{3}$-based and $SnO_{2}$-based thick films, and ZnO-based thick films, respectively. Since the resistance of ZnO-based thick films are extremely high($>10^{6}{\Omega}$), the signal to noise ratio was comparatively low. In order to determine the selectivity, the films are exposed to the interfering gases such as ozone, ammonia, methane and the mixture of carbon monoxide and propane. $WO_{3}$-ZnO(3 wt.%) and $SnO_{2}-WO_{3}$(3 wt.%) thick film sensors show high sensitivity, good selectivity, excellent reproducibility and the linearity of $NO_{2}$ concentration versus sensor resistance. The preliminary results clearly demonstrated that the sensor can be successfully applied for the detection of $NO_{2}$ in sub-ppm range.

• Journal of Communications and Networks
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• v.16 no.2
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• pp.227-237
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• 2014

Throughput scaling laws for two coexisting ad hoc networks with m primary users (PUs) and n secondary users (SUs) randomly distributed in an unit area have been widely studied. Early work showed that the secondary network performs as well as stand-alone networks, namely, the per-node throughput of the secondary networks is ${\Theta}(1/\sqrt{n{\log}n})$. In this paper, we show that by exploiting directional spectrum opportunities in secondary network, the throughput of secondary network can be improved. If the beamwidth of secondary transmitter (TX)'s main lobe is ${\delta}=o(1/{\log}n)$, SUs can achieve a per-node throughput of ${\Theta}(1/\sqrt{n{\log}n})$ for directional transmission and omni reception (DTOR), which is ${\Theta}({\log}n)$ times higher than the throughput with-out directional transmission. On the contrary, if ${\delta}={\omega}(1/{\log}n)$, the throughput gain of SUs is $2{\pi}/{\delta}$ for DTOR compared with the throughput without directional antennas. Similarly, we have derived the throughput for other cases of directional transmission. The connectivity is another critical metric to evaluate the performance of random ad hoc networks. The relation between the number of SUs n and the number of PUs m is assumed to be $n=m^{\beta}$. We show that with the HDP-VDP routing scheme, which is widely employed in the analysis of throughput scaling laws of ad hoc networks, the connectivity of a single SU can be guaranteed when ${\beta}$ > 1, and the connectivity of a single secondary path can be guaranteed when ${\beta}$ > 2. While circumventing routing can improve the connectivity of cognitive radio ad hoc network, we verify that the connectivity of a single SU as well as a single secondary path can be guaranteed when ${\beta}$ > 1. Thus, to achieve the connectivity of secondary networks, the density of SUs should be (asymptotically) bigger than that of PUs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.1
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• pp.40-45
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• 2015

Electrode systems: a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack in epoxy plate and a free particle (FP) were fabricated to simulate insulation defects in a gas insulated switchgear (GIS). $SF_6$ gas was filled in the electrode systems by 3 bar and/or 5 bar, respectively. Partial discharge (PD) pulses were detected through a $50{\Omega}$ non-inductive resistor. A calibration test was carried out according to IEC 60270, and the sensitivity was 0.25 pC/mV. PD pulses were distributed in the phase of $50^{\circ}{\sim}135^{\circ}$ and over 95% of them existed in the phase of $55^{\circ}{\sim}120^{\circ}$ for the POC. PD pulses were distributed in the phase of $230^{\circ}{\sim}310^{\circ}$ and over 90% of them existed in phase of $220^{\circ}{\sim}300^{\circ}$ for the POE. PD pulses occurred in the phase of $40^{\circ}{\sim}60^{\circ}$ and $220^{\circ}{\sim}300^{\circ}$ for the crack, and pulse counts were 25% higher in negative polarity than in positive polarity. PD pulses were distributed in every phase unlike to other three electrode systems and the peak magnitude was measured at $118^{\circ}$ and $260^{\circ}$ for the FP. As described above, PD pulses were observed in positive polarity for the POC, in negative one for the POE, in both one for the crack and the FP. In conclusion, it is expected that the identification rate of defect type can be improved by considering the polarity ratio of PD pulses on the PRPDA method.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Journal of the Korean Society of Food Science and Nutrition
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• v.44 no.7
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• pp.961-969
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• 2015

To investigate the effect of n-3 fatty acid from Bokbunja (Rubus coreanus Miq.) seed oil (BSO), we examined improvement of plasma triglycerides and cholesterol in vivo. Five-week-old ICR mice were divided into five groups of six mice each; Control, high fat diet (HFD) control (negative control), salmon oil control (positive control, HFD+commercial n-3 fatty acid), and BSO experimental groups (HFD+1 g/60 kg BW/d, HFD+2 g/60 kg BW/d). After 4 weeks of BSO treatment, we measured serum triglyceride and cholesterol levels. The levels of low-density lipoprotein/very-low-density lipoprotein-cholesterol, high-density lipoprotein-cholesterol, and total cholesterol were significantly (P<0.05) reduced in the group fed BSO at 2 g/60 kg BW/d compared to the negative control. Levels of triglycerides, which are similar to cholesterol, were also significantly (P<0.05) reduced in the same group. To investigate further, we tested blood coagulation parameters. Prothrombin time (PT) and activated partial thromboplastin time (aPTT) were not significantly different among the five groups according to BSO. However, the 2 g/60 kg BW/d BSO group treated with PT and aPTT showed a tendency to live longer than the negative control. Taken together, BSO might improve blood homeostasis mediated via hypo-lipidemic and anti-coagulation activities.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.329-334
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• 1991

The x values and electrical conductivity of the nonstoichiometric compound NbO$_x$ have been measured in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ ∼ 1 ${\times}$ 10$^{-5}$ atm. The NbO$_x$ is a stoichiometrical compound of Nb$_2$O$_5$ under oxygen partial pressure higher than 1.0 ${\times}$ 10$^{-2}$ atm at the above temperature range. The x values were found to vary between 2.48491 and 2.49900 in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure lower than 1 ${\times}$ 10$^{-3}$ atm. The enthalpy of the formation for x' in NbO$_{2.50000-x'}$(${\Delta}H_f$) increased of 15.98 to 17.26 kcal/mol under the conditions. The electrical conductivity (${\sigma}$) of the oxide varied from 10$_4$ to 10$_1$ ohm$_1$cm$_1$ in the above conditions. The activation energy for the conduction was about 1.7 eV. The oxygen pressure dependency of the conductivity (or 1/n value) was about -1/4. The nonstoichiometric conduction mechanism of the oxide has been discussed with the x' values, the ${\sigma}$ values, and the thermodynamic data.

• Journal of Korean Medicine for Obesity Research
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• v.12 no.1
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• pp.33-47
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• 2012

Objectives This study was designed to investigate the effects of fermented soybean upon anti-inflammation, cytotoxicity, antioxidant and intestinal mucous membrane permeability by measuring the cell viability, NO (nitric oxide) production, DPPH, Polyphenol, HRP and TEER in cells like Raw 264.7 and HCT 116 using fermented soybean. Methods Raw 264.7 cell and HCT 166 cell were used in this study. And fermented soybean powders were used for the experimental group and soybean powders for the control group. There was inflammation response upon using lipopolysaccharide(LPS). Fermented soybean powders and soybean powders were in a respectively different dose added to the cells with LPS. MTT assay, NO, DPPH and Polyphenol measurement, TEER, HRP were conducted for each cell. The results of this study were presented in mean and standard deviation. Results 1. In Raw 254.7 cells added with $100{\mu}l/ml$ unfermented soybean powders, 104.95% higher than 62.59% was measured. In Raw 254.7 cells added with $100{\mu}l/ml$ fermented soybean powders, there was 74.90% measured higher than 62.59%, which was a significant result. 2. By a gradual increase of unfermented soybean powders like $0.1{\mu}l/ml$, $1.0{\mu}l/ml$, $10{\mu}l/ml$, $100{\mu}l/ml$, the measured NO were also gradually decreased $53.12{\mu}M$, $47.57{\mu}M$, $37.02{\mu}M$, $28.16{\mu}M$. In case of cells added with fermented soybean powders, $43.95{\mu}M$ NO was measured in $0.1{\mu}l/ml$ which is significant, and in other cases, mostly measured over$ 56.72{\mu}M$. 3. It was inferred that fermented soybean powders have anti-inflammatory effects of maintaining intestinal mucous membrane permeability because the measured values of cells in both groups were all higher than $133.62{\Omega}$ measured of cells added with only LPS. And measured values of cells in both groups were all lower than 2.26 measured of cells added with only LPS. 4. In case of experiment DPPH and polyphenol measurement, fermented group was all higher than unfermented group. Conclusion From the results of conducting MTT assay, NO measurement, and TEER, HRP by using cells Raw 264.7 and HCT-116, even though there was no significance in the correlation between cytotoxicity, anti-inflammatory effects, both unfermented soybean powders and fermented soybean powders were shown to have intestinal mucous membrane permeability improvement effects. This effects could be applicable for autoimmune diseases, chronic inflammatory diseases and so additional studies are expected in the future. From the results of conducting DPPH, Polyphenol measurement, Fermented soybean may be useful as potential antioxidant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.38-43
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• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.