• Korean Journal of Food Science and Technology
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• v.20 no.3
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• pp.326-330
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• 1988

For the automation of Koji incubation process, microcomputer based Koji incubation system was built and applied to acquisition of the process variables, and to control of the Koji incubation process. The incubation variables included the relative humidity and Koji weight. And data measured were sent to the microcomputer by the interface device built with MC 6821 PIA. Incubation environment conditions -temperature and humidity- were controlled by the actuation of heater and mist sprayer with on/off signal generated by ASIC program. Aspergillus oryzae as a starter of the Koji and steamed barley as media were used and Koji was successfully manufactured both at $25^{\circ}C,\;70%$ RH and at $27^{\circ}C,\;80%$ RH. During the Koji preperation, the temperature was linearly increased and substrate was consumed stepwise showing 3 steps in the weight loss curve.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.265-270
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• 2014

Among the Ruddlesden-Popper series, $La_4Ni_3O_{10}$ has received widespread attention as a promising cathode material by reason of its favorable properties for realizing high performance of intermediate temperature solid oxide fuel cells (IT-SOFCs). The $La_4Ni_3O_{10}$ cathode is prepared using the facile sol-gel method by employing tri-blockcopolymer (F127) to obtain a single phase in a short sintering time. There are no reactions between the $La_4Ni_3O_{10}$ cathode and the $Ce_{0.9}Gd_{0.1}O_{2-\delta}$ (GDC) electrolyte upon sintering at $1000^{\circ}C$, indicating that the $La_4Ni_3O_{10}$ cathode has good chemical compatibility with the GDC electrolyte. The maximum electrical conductivity of $La_4Ni_3O_{10}$ reaches approximately 240 S $cm^{-1}$ at $100^{\circ}C$ and gradually decreases with increasing temperaturein air atmosphere. The area specific resistance value of $La_4Ni_3O_{10}$ composite with 40 wt% GDC is $0.435{\Omega}cm^2$ at $700^{\circ}C$. These data allow us to propose that the $La_4Ni_3O_{10}$-GDC composite cathode is a good candidate for IT-SOFC applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.602-610
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• 2012

The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.

• 유체기계공업학회:학술대회논문집
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• 2004.12a
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• pp.396-401
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• 2004

In this paper, a 1MW HAWT(FIL-1000) rotor blade has been designed by BEMT(Blade Element Momentum Theory) with Prandtl's tip loss. Also, a 3-D flow and performance analysis on the FIL-1000 rotor blade has been carried out by using the 3-D Navier-Stokes commercial solver (CFX-5.7) to provide more efficient design techniques to the large-scale HAWT engineers. The rated power and itsapproaching wind velocity at design point (TSR=7.5) are 1MW and 9.99m/s respectively. The rotor diameter is 54.5m and the rotating speed is 26.28rpm. Airfoils such as FFA W-301, DU91-W-250, DU93-W-210, NACA 63418, NACA 63415 consist of the rotor blade from hub to tip. Recent CFX version, 5.7 was adopted to simulate 3-D flow field and to analyze the performance characteristics of the rotor blade. Entire mesh node number is about 730,000 and it is generated by ICEM-CFD to achieve better mesh quality The predicted maximum power occurringat the design tip speed ratio is 931.45kW. Approaching to the root, the inflow angle becomes large, which causesthe blade to be stalled in the region. Therefore, k-$\omega$ SST turbulence model was used to predict the quantitative flow information more accurately. Application of commercial CFD code to optimum blade design and performance analysis was proved to be more effective environment to HAWT blade designers.

• Polymer(Korea)
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• v.35 no.5
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• pp.488-492
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• 2011

Three isocyanatopropyldimethoxysilylpolydimethylsiloxanes(IDMSi-PDMS) were synthesised from the reaction of isocyanatopropyltrimethoxysilane with monohydroxyl group termainated PDMS having different molecular weight($M_n$=5000, 10000, and 20000). Then PDMS modified polyurethane hybrid elastomer(PSMPH) were prepared from the reaction of IDMSi-PDMS with ${\alpha}$, ${\omega}$-hydroxyl group terminated polyurethane. PSMPH sealant was prepared by compounding PSMPH elastomer with additives such as plasticizer, adhesion promoter, crosslinking agent, vicosity increasing agent, inorganic filler, and catalyst at room temperature under nitrogen atmosphere. The methoxy group in the PSMPH sealant should be crosslinked with the hydroxyl group in the building stone or moisture by typical sol-gel reaction. The adhesive strength of the sealant having PDMS of $M_n$=5000 showed 40.28 kg of maxium load and 20.14 kg of break load. The shrinkage rate of the sealant having PDMS of $M_n$=20000 was 5.7% as the best result. Also, their skin over time, slump, oil content after 8 days under oil soaked paper and alkaline resistance characteristics show good results.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.73-80
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• 2007

For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.145-151
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• 2014

Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Polymer(Korea)
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• v.38 no.5
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• pp.596-601
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• 2014

Polyamide (PA) oligomers, which are the hard segment of poly(ether-block-amide) (PEBA), presenting thermoplastic and high performance elastomeric properties were prepared by polycondensation between 4-aminobenzoic acid and 12-aminododecanoic acid. Subsequently PEBAs were obtained by addition polymerization of the PA oligomers and various molecular weights of poly(tetramethylene glycol) (PTMG). The structure of the final PEBA was identified by using FTIR and $^1H$ NMR and the thermal properties depending on changes in the structure of hard segment were collected by using DSC and UTM analysis. As the results, the melt temperature ($T_m$), the initial modulus, and the maximum strength of PEBAs increased with an increase in aromatic moiety up to 30% without reducing crystallinity.