• Journal of Microbiology and Biotechnology
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• v.22 no.3
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• pp.311-315
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• 2012

A novel ${\beta}$-proteobacterium, designated BXN5-$27^T$, was isolated from soil of a ginseng field of Baekdu Mountain in China, and was characterized using a polyphasic approach. The strain was Gram-staining-negative, aerobic, motile, non-spore-forming, and rod shaped. Strain BXN5-$27^T$ exhibited ${\beta}$-glucosidase activity that was responsible for its ability to transform ginsenoside $Rb_1$ (one of the dominant active components of ginseng) to compound Rd. Phylogenetic analysis based on 16S rRNA gene sequences showed that this strain belonged to the family Comamonadaceae; it was most closely related to Ramlibacter henchirensis $TMB834^T$ and Ramlibacter tataouinensis$TTB310^T$ (96.4% and 96.3% similarity, respectively). The G+C content of the genomic DNA was 68.1%. The major menaquinone was Q-8. The major fatty acids were $C_{16:0}$, summed feature 4 (comprising $C_{16:1}$ ${\omega}7c$ and/or iso-$C_{15:0}$ 2OH), and $C_{17:0}$ cyclo. Genomic and chemotaxonomic data supported the affiliation of strain BXN5-$27^T$ to the genus Ramlibacter. However, physiological and biochemical tests differentiated it phenotypically from the other established species of Ramlibacter. Therefore, the isolate represents a novel species, for which the name Ramlibacter ginsenosidimutans sp. nov. is proposed, with the type strain being BXN5-$27^T$ (=DSM $23480^T$ = LMG $24525^T$ = KCTC $22276^T$).

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.2
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• pp.375-388
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• 1996

It has widely known for speech problem in patients with malocclusion, but there have been insufficient studies on degrees of severity. Patients with openbite and Cl III malocclusion usually have speech problem. It has widely known that fricative /s/is pronunciated most abnormally in Cl III malocclusion than any other consonant. Therefore 20 children with anterior crossbite were selected for study groups and 40 children with normal anterior occlusion were selected for control group. 7 sounds such as / 사(sa), 서($s{\delta}$), 소(so), 수(su), 스($s{\omega}$), 시(si), 세(se) / were recorded, and the formants and formants ratios were measured by using Sensimetric Speech Station, which is speech analyzing program in IBM PC. The results were as follows : 1. In anterior crossbite group, F1 of all 7 sounds were significantly higher than normal anterior relationship group(p<0.05). 2. There were no significant difference in F2 between two groups except / 소(so), 수(su)/(p>0.05). 3. In anterior crossbite group, F2/F1 ratio of all 7 sounds were significantly smaller than normal anterior relationship group(p<0.05). 4. There were no significant difference in accordance with tongue position(p>0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.32-32
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• 2008

X-ray detector는 의료용, 산업용 등 다양한 분야에서 사용되어지고 있으며 기존의 Analog X-ray 방식의 환경오염, 저장공간 부족, 실시간 분석의 어려움 등의 문제점들을 해결하기 위하여 Digital X-ray로의 전환과 연구가 활발하며 이에 따른 관심도 높아지고 있는 살점이다. Digital X-ray detector는 p-영역과 n-영역 사이에 아무런 불순물을 도핑하지 않은 진성반도체(intrinsic semiconductor) 층을 접합시킨 이종접합 PIN 구조의 photodiode 이다. 이 소자는 역바이어스를 가해주면 p영역과 n영역 사이에서 캐리어 (carrier)가 존재하지 않는 공핍 영역이 발생하게 된다. 이런 공핍 영역에서 광흡수가 일어나면, 전자-정공 쌍이 발생한다. 그리고, 발생한 전자-정공 쌍에 전압이 역방향으로 인가되는 경우, 전자는 양의 전극으로 이동하고, 정공은 음의 전극으로 이동한다. 이와 같이, 발생한 캐리어들을 검출하여 전기적인 신호로 변환 시킨다. 고해상도의 Digital X-ray detector를 만들기 위해서는 누설전류에 의한 noise 감소와 소자의 높은 안정성과 내구성을 위한 높은 breakdown voltage를 가져야 한다. 본 연구에서는 Digital X-ray detector의 leakage current 감소와 breakdown voltage를 높이기 위하여 guradring과 gettering technology를 사용하여 전기적 특성을 분석하였다. 기판으로는 $10k\Omega{\cdot}cm$ resistivity를 갖으며, n-type <111>인 1mm 두께의 4인치 Si wafer를 사용하였다. 그리고 pixel pitch는 $100{\mu}m$이며 active area는 $80{\mu}m{\times}80{\mu}m$인 $32\times32$ array를 형성하여 X-ray를 조사하여 소자의 특성을 평가 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.769-775
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• 2016

Characteristics of a wireless sensor powered by the IDE (interdigitated electrode) embedded piezoelectric cantilever generator were analyzed in order to evaluate its potential for use in wireless sensor applications. The IDE embedded piezoelectric cantilever was designed and fabricated to have a self-resonance frequency of 126 Hz and acceleration of 1.57 G, respectively, for the mechanical resonance with a practical conveyor system in a thermal-power plant. It produced maximum output power of 2.81 mW under the resistive load of $160{\Omega}$ at 126 Hz. The wireless sensor module is electrically connected to a rectifier capacitor with capacity of 0.68 farad and 3.8 V for power supply by the piezoelectric cantilever generator. The unloaded capacitor could be charged as a rate of approximately $365{\mu}V/s$ while the capacitor exhibited that of 0.997 mV/min. during communication under low duty cycle of 0.2%. Therefore, it is considered that the fabricated IDE embedded piezoelectric cantilever generator can be used for wireless sensor applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.44-53
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• 2008

In this paper, we present the design of delta-sigma modulation-based class-D amplifier for driving headphones in portable audio applications. The presented class-D amplifier generates PWM(pulse width modulation) signals using a single-bit fourth-order high-performance delta-sigma modulator. To achieve a high SNR(signal-to-noise ratio) and ensure system stability, the locations of the modulator loop filter poles and zeros are optimized and thoroughly simulated. The test chip is fabricated using a standard $0.18{\mu}m$ CMOS process. The active area of the chip is $1.6mm^2$. It operates for the signal bandwidth from 20Hz to 20kHz. The measured THD+N(total harmonic distortion plus noise) at the $32{\Omega}$ load terminal is less than 0.03% from a 3V power supply.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.