• 전기전자학회논문지
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• 제19권4호
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• pp.514-519
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• 2015

본 논문에서는 이중 게이트 junctionless MOSFET 의 성능 최적화를 위하여 다중 게이트 형태를 적용하여 평가한다. 금속 게이트들 사이의 일함수가 서로 다르므로 다중 게이트 구조를 적용할 경우 금속게이트 길이에 따라 소스와 드레인 주변의 전위를 조절할 수 있다. 동작 전류와 누설 전류 그리고 동작 전압은 게이트 구조에 의해 조절이 가능하며 이로 인한 동작 특성 최적화가 가능하다. 본 연구에서는 반도체 소자 시뮬레이션을 통하여 junctionless MOSFET 의 최적화를 구현하고 분석하는 연구를 수행 한다.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1497-1502
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• 2013

Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET's problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width ($W_{fin}$), fin height ($H_{fin}$), and doping concentration ($D_{ch}$). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.159-165
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• 2016

Recently, active efforts are being made for future Si CMOS technology by various researches on emerging devices and materials. Capability of low power consumption becomes increasingly important criterion for advanced logic devices in extending the Si CMOS. In this work, a junctionless field-effect transistor (JLFET) with ultra-thin poly-Si (UTP) channel is designed aiming the sub-10-nm technology for low-power (LP) applications. A comparative study by device simulations has been performed for the devices with crystalline and polycrystalline Si channels, respectively, in order to demonstrate that the difference in their performances becomes smaller and eventually disappears as the 10-nm regime is reached. The UTP JLFET would be one of the strongest candidates for advanced logic technology, with various virtues of high-speed operation, low power consumption, and low-thermal-budget process integration.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2018년도 추계학술대회
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• pp.381-382
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• 2018

무접합 나노선 터널 전계 효과 트렌지스터(junctionless nanowire tunnel field-effect transistor; JLNW-TFET)에서 소스(p+), 채널(i), 드레인(n) 물질으로 실리콘 및 게르마늄을 사용하여 이 구조에 대한 문턱전압 이하 기울기(subthreshold swings; SS)와 구동전류를 관찰했다. 소스-채널을 게르마늄-실리콘일 때 실리콘-실리콘, 실리콘-게르마늄, 게르마늄-게르마늄 구조보다 구동전류가 최대 1000배 증가하였고, 실리콘-실리콘 구조가 다른 구조에 비해 최소 SS가 최대 5배 이상 감소하였다.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.420-424
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• 2014

본 논문에서는 접합을 가지지 않는 Junctionless transistor (JLT)의 두께에 따른 특성 차이 및 기존의 MOSFET과의 특성 비교를 EDISON 시뮬레이터를 통해 확인을 하였다. JLT의 두께가 얇아짐에 따라 On/off 비율 측면에서 소자의 특성이 향상됨을 확인 하였으며, 기존 Inversion mode의 MOSFET과 비교하여 단 채널 효과 측면에서도 향상된 특성을 확인 할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.847-853
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• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.508-517
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• 2014

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.245-251
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• 2013

The effect of band-to-band tunneling (BTBT) leads to an obvious increase of the leakage current of junctionless (JL) transistors in the OFF state. In this paper, we propose an effective method to decline the influence of BTBT with the example of n-type double gate (DG) JL metal-oxide-semiconductor field-effect transistors (MOSFETs). The leakage current is restrained by changing the geometrical shape and the physical dimension of the gate of the device. The optimal design of the JL MOSFET is indicated for reducing the effect of BTBT through simulation and analysis.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.146-151
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• 2018

In this study, we compared the threshold-voltage extraction methods of accumulation-type JLDG (junctionless double-gate) MOSFETs (metal-oxide semiconductor field-effect transistors). Threshold voltage is the most basic element of transistor design; therefore, accurate threshold-voltage extraction is the most important factor in integrated-circuit design. For this purpose, analytical potential distributions were obtained and diffusion-drift current equations for these potential distributions were used. There are the ${\phi}_{min}$ method, based on the physical concept; the linear extrapolation method; and the second and third derivative method from the $I_d-V_g$ relation. We observed that the threshold-voltages extracted using the maximum value of TD (third derivatives) and the ${\phi}_{min}$ method were the most reasonable in JLDG MOSFETs. In the case of 20 nm channel length or more, similar results were obtained for other methods, except for the linear extrapolation method. However, when the channel length is below 20 nm, only the ${\phi}_{min}$ method and the TD method reflected the short-channel effect.

• 대한전자공학회논문지SD
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• 제47권10호
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• pp.14-22
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• 2010

기존의 n-type metal-oxide-semiconductor field effect transistor(NMOSFET)은 $n^+/p^{(+)}/n^+$ type의 이온 주입을 통하여 소스/채널/드레인 영역을 형성하게 된다. 30 nm 이하의 채널 길이를 갖는 초미세 소자를 제작함에 있어서 설계한 유효 채널 길이를 정확하게 얻기 위해서는 주입된 이온들을 완전히 activation하여 전류 수준을 향상시키면서도 diffusion을 최소화하기 위해 낮은 thermal budget을 갖도록 공정을 설계해야 한다. 실제 공정에서의 process margin을 완화할 수 있도록 오히려 p-type 채널을 형성하져 않으면서도 기존의 NMOSFET의 동작을 온전히 구현할 수 있는 junctionless(JL) MOSFET이 연구중이다. 본 논문에서는 3차원 소자 시뮬레이션을 통하여 silicon nanowire(SNW) 구조에 접목시킨 JL MOSFET을 최적 설계하고 그러한 조건의 소자에 대하여 conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) 등의 기본적인 고주파 특성을 분석한다. 채널 길이는 30 nm이며 설계 변수는 채널 도핑 농도와 채널 SNW의 반지름이다. 최적 설계된 JL SNW NMOSFET에 대하여 동작 조건($V_{GS}$ = $V_{DS}$ = 1.0 V)에서 각각 367.5 GHz, 602.5 GHz의 $f_T$, $f_{max}$를 얻을 수 있었다.