• Title/Summary/Keyword: junction structure

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Flip Chip Assembly Using Anisotropic Conductive Adhesives with Enhanced Thermal Conductivity

  • Yim, Myung-Jin;Kim, Hyoung-Joon;Paik, Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.9-16
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    • 2005
  • This paper presents the development of new anisotropic conductive adhesives with enhanced thermal conductivity for the wide use of adhesive flip chip technology with improved reliability under high current density condition. The continuing downscaling of structural profiles and increase in inter-connection density in flip chip packaging using ACAs has given rise to reliability problem under high current density. In detail, as the bump size is reduced, the current density through bump is also increased. This increased current density also causes new failure mechanism such as interface degradation due to inter-metallic compound formation and adhesive swelling due to high current stressing, especially in high current density interconnection, in which high junction temperature enhances such failure mechanism. Therefore, it is necessary for the ACA to become thermal transfer medium to improve the lifetime of ACA flip chip joint under high current stressing condition. We developed thermally conductive ACA of 0.63 W/m$\cdot$K thermal conductivity using the formulation incorporating $5 {\mu}m$ Ni and $0.2{\mu}m$ SiC-filled epoxy-bated binder system to achieve acceptable viscosity, curing property, and other thermo-mechanical properties such as low CTE and high modulus. The current carrying capability of ACA flip chip joints was improved up to 6.7 A by use of thermally conductive ACA compared to conventional ACA. Electrical reliability of thermally conductive ACA flip chip joint under current stressing condition was also improved showing stable electrical conductivity of flip chip joints. The high current carrying capability and improved electrical reliability of thermally conductive ACA flip chip joint under current stressing test is mainly due to the effective heat dissipation by thermally conductive adhesive around Au stud bumps/ACA/PCB pads structure.

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An Evaluation on the Length of Guidance Lane Marking on Expressways Using Virtual Driving Simulator (가상주행 시뮬레이터를 활용한 고속도로 차로유도선 적정 연장길이 산정 연구)

  • Park, Je jin;Kim, Duck nyung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.16 no.5
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    • pp.1-11
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    • 2017
  • Expressway network which plays an important role on land transportation system, have been developing quantitatively and qualitatively with $7{\times}9$ structure. To cope with complex geometric condition, guidance lane marking has been installed to induce safer lane-changing maneuver. However, there is no standard on guidance lane marking and its effectiveness is also verified with limited scope. The major purpose of this research is to clarify its effectiveness in terms of driving safety aspect using virtual driving simulator and to suggest standard on the proper length. To carry this out, preference data from subjects was collected and lane-changing pattern within virtual driving environment was investigated. In addition, in order to quantify the level of comfort, Electroencephalogram data was collected and validated using statistical test. Finally, it is expected that this research can be used to establish standard on guidance lane marking.

Fabrication and Analysis of (SAW Self-Aligned Selectively Grown W-gate) MOSFETs (SAW Self-Aligned Selectively Grown W-GAte) MOSFETs (SAW (Self-Algined Selectively Grown W-Gate) MOSFETs의 제작 및 특성 분석)

  • Hwang, Seong-Min;Rho, Kwang-Myoung;Chung, Myung-Jun;Huh, Min;Jeong, Ha-Poong;Suh, Jeong-Won;Park, Chan-Kwang;Koh, Yo-Hwan;Lee, Dai-Hoon
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.6
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    • pp.82-90
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    • 1995
  • We proposed SAW (Self-Algined Selectively Grown W-Gate) MOSFET structure, and strudied electrical characteristics of the fabricated SAW MOSFETs. The threshold volgate of 0.21${\mu}$m SAW NMOSFET was 0.18 V and that of 0.24 ${\mu}$m SAW PMOSFET was -0.16 V. The subthreshold slope was 74 mV/decade for NMOSFET and 82 mV/decade for PMOSFET. The maximum transconductance of NMOSFET and PMOSFET, at V$_{GS}$=2.5 V and V$_{DS}$=1.5 V, were260 mS/mm and 122 mS/mm. The measured saturation drain current at V$_{GS}$=V$_{DS}$ =2.5 V was 0.574 mA/${\mu}$m for NMOSFET and -0.228 mA/${\mu}$m for PMOSFET. The gate resistance of SAW MOSFET was about m$\Omega$cm and the n+-p junction capacitance of SAW MOSFET was about 10% lowas than that of the conventional MOSFET's.

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Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

  • Cho, Dae-Hyung;Lee, Woo-Jung;Wi, Jae-Hyung;Han, Won Seok;Kim, Tae Gun;Kim, Jeong Won;Chung, Yong-Duck
    • ETRI Journal
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    • v.38 no.2
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    • pp.265-271
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    • 2016
  • We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.

THE EFFECT OF A CHITOSAN COATING OF DENTAL IMPLANT ON THE SHOCK ABSORPTION UNDER IMPACT TEST (키토산으로 표면처리된 인공치아의 충격전달에 관한 연구)

  • Kim, Ki-Hong;Lee, Yong-Chan;Cho, Byoung-Ouck;Choi, Kui-Won;Kwon, Ick-Chan;Bae, Tae-Soo
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • v.27 no.1
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    • pp.9-14
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    • 2001
  • With the object of providing a temporary artificial periodonal ligament-like membrane around the dental implant, 10 Branemark type implants were coated with commercially available chitosan(Fluka Co., Buchs, Switzerland) which has a molecular weight of 70,000 and 80% deacetylation degree. Once this bioactive hydrophillic polymer(chitosan) contacts with blood or wound fluids, it becomes swollen and penetrates into the adjacent cancellous bone. Thus the interface between implant and surrounding bone is completely filled with chitosan. This tight junction in early healing phase enhances primary stability. The chitosan coated dental implants were implanted into the fresh patella bones from porcine knees, since the thickness of cortical bone is relatively even and their cancellous structure is homogenous. To test the shock absorbing effect, 1mm delta-rogette strain gage was installed behind the implant. The results showed 1. The principal strain peak value directed to the impact of coated implant was 0.064 0.018(p<0.05) and that of uncoated implant was 0.095(0.032 p<0.05). 2. The peak time delay of coated implant was 0.056sec(0.011 p<0.05) and that of uncoated implant was 0.024sec(0.009 p<0.05). It can be reasoned from this results that the chitosan coating has a shock absorbing effect comparable with a temporary artificial periodontal ligament.

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Primary Structure of the Human VkII Regions Elicited by Haemophilus influenzae Type b Polysaccharide Vaccines; The J Gene Usage Is Restricted in Child Antibodies Using the A2 Gene

  • Yu, Kang-Yeol;Kim, Jin-Ho;Chung, Gook-Hyun
    • BMB Reports
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    • v.33 no.3
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    • pp.249-255
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    • 2000
  • The Haemophilus influenzae type b (Hib) has been a major cause of bacterial meningitis in children who are less than two years old. The variable (V) region repertoire of adult Caucasian antibodies (Abs) to Hib polysaccharide (PS) has been characterized well. The majority of adult antibodies against Hib uses VL that is derived from the Vk gene A2 and have arginine at the N region. In order to explore the possibility those antibody responses to Hib-PS is variable in various age groups, we examined the VL regions of the antibodies to Hib-PS in Korean adults and children. We immunized Korean adults (n = 8) and children (n = 39) with Hib tetanus conjugated vaccines, isolated RNAs from the peripheral lymphocytes, and amplified the A2-derived VL regions by RT-PCR. The PCR products were subcloned and sequenced. Forty-seven out of 54 independent clones from children used the $J{\kappa}2$, or $J{\kappa}3$ gene in preference. The adults, however, used all of the $J{\kappa}$ genes evenly. With respect to the amino acid sequences of variable regions, adult $A2-J{\kappa}$ recombinants have a germline sequence. But, the 76th codon (AGC) of child $A2-J{\kappa}2$ recombinants was substituted with CGC (arginine) in most cases (88 %) and 77 percent of child clones using the $A2-J{\kappa}3$ genes have isoleucine-109 at the junction of $J{\kappa}-C{\kappa}$ instead of threonine that is found in a germline sequence. These results suggest that the mechanism of antibody production in young children is different from that of adults.

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Depletion region analysis of silicon substrate using finite element methods (유한요소법을 이용한 실리콘 기판에서의 공핍 영역 해석)

  • Byeon, Gi-Ryang;Hwang, Ho-Jeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.1-11
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    • 2002
  • In this paper, new simple method for the calculation of depletion region under complex geometry and general purpose numerical simulator that could handle this were developed and applied in the analysis of SCM with nanoscale tip, which is a promising tool for high resolution dopant profiling. Our simple depletion region seeking algorithm alternatively switches material of elements to align ionized element boundary with contour of zero potential. To prove the validity of our method we examined whether our results satisfy the definition of depletion region and compared those with known values of un junction and MOS structure. By modeling of capacitance based on the shape of depletion region and potential distribution, we could calculate the CV curve and dC/dV curve between silicon substrate and nanoscale SCM tip.

Protective Effect of Lactobacillus fermentum LA12 in an Alcohol-Induced Rat Model of Alcoholic Steatohepatitis

  • Kim, Byoung-Kook;Lee, In-Ock;Tan, Pei-Lei;Eor, Ju-Young;Hwang, Jae-Kwan;Kim, Sae-Hun
    • Food Science of Animal Resources
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    • v.37 no.6
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    • pp.931-939
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    • 2017
  • Alcoholic liver disease (ALD) is a complex multifaceted disease that involves oxidative stress and inflammation as the key mediators. Despite decades of intensive research, there are no FDA-approved therapies, and/or no effective cure is yet available. Probiotics have received increasing attention in the past few years due to their well-documented gastrointestinal health-promoting effects. Interestingly, emerging studies have suggested that certain probiotics may offer benefits beyond the gut. Lactobacillus fermentum LA12 has been previously demonstrated to play a role in inflammatory-related disease. However, the possible protective effect of L. fermentum LA12 on ALD still remain to be explored. Thus, the aim of this study was to evaluate the possible protective effect of L. fermentum LA12 on alcohol-induced gut barrier dysfunction and liver damage in a rat model of alcoholic steatohepatitis (ASH). Daily oral administration of L. fermentum LA12 in rat model of ASH for four weeks was shown to significantly reduced intestinal nitric oxide production and hyperpermeability. Moreover, small intestinal histological- and qRT-PCR analysis further revealed that L. fermentum LA12 treatment was capable of up-regulating the mRNA expression levels of tight junction proteins, thereby stimulating the restitution of barrier structure and function. Serum and hepatic analyses also revealed that the restoration of epithelial barrier function may prevent the leakage of endotoxin into the blood, subsequently improve liver function and hepatic steatosis in the L. fermentum LA12-treated rats. Altogether, results in this study suggest that L. fermentum LA12 may be used as a dietary adjunct for the prevention and treatment of ASH.

The Improvement of GaN Doherty Amplifier with Memory Effect Compensation (GaN Doherty 증폭기의 메모리 효과 보상을 통한 성능개선)

  • Lee, Suk-Hui;Cho, Gap-Je;Bang, Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.49 no.1
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    • pp.47-52
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    • 2012
  • A power amplifier is one of important factors for basestation's efficiency and the researches for efficency enhancement focus Doherty amplifier structure with GaN power devices in these days. A memory effect of Doherty amplifier affect operation characteristics for linearity and efficiency. This paper reports on electrothermal nonlinearity modeling and compensation for GaN Doherty amplifier's distortion. Also this paper reports on the dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. We design distortion model for GaN Doherty amplifier and predistortion compensator for electrothermal memory effect from the proposed behavior model parameters. The simulations was evaluated by ADS Tools and GaN Doherty amplifier with 37dBm. The GaN Doherty amplifier with compensator enhanced about 16dB than without electrothemal memory effect compensator in 2-tone output spectrum.

Design of Slit on Ground Plane for Improving Axial Ratio of Spiral Antenna (스파이럴 안테나의 축비 개선을 위한 접지면 위의 슬릿 설계)

  • Lee, Won-Bin;Ryu, Joo-Hyeon;Kim, Youngwook;Min, Kyeong-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.4
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    • pp.251-260
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    • 2017
  • This paper describes the design of a slit on ground plane to improve the axial ratio of the spiral antenna for the NLJD system application. A proposed slit shape located on the ground plane is changed to compare with the archimedean spiral slit shape of the antenna in reference [7]. In order to improve the axial ratio, the slit on the ground plane is divided by the uniform angle and the conductor of position where the current has the opposite direction each other is eliminated. Measured return loss, radiation pattern and gain show a good agreement with the computer simulation results. Even though the proposed slit structure on the ground plane was changed to compare with ones of reference [7], the characteristics such as return loss, radiation pattern and gain are not almost changed and only the axial ratio was remarkably improved at 4.88 GHz.