• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.340-340
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• 2016

We have prepared alumina (Al2O3) doped zinc oxide (AZO) films by DC magnetron sputtering (MS) technique and obtained higher self surface texturing at a high target angle (f). We have characterized the films and applied it as a front electrode of a single junction amorphous silicon solar cell. At a lower f the deposited films show higher values of optical gap (Eg), charge carriers mobility & concentration, crystallite grain size and wider wavelength range of transmission. At higher target angle the sheet resistance, surface roughness, haze factor etc for the films increase. For f=72.5o the haze factor for diffused transmission becomes 6.46% at 540 nm wavelength. At f=72.5o the material shows a reduction in crystallinity and evolution of a hemispherical-type sub-micron surface textures. A Monte Carlo method (MCM) of simulation of the AZO film deposition shows that such an enhanced self-surface texturing of the films at higher f is possible.

• Journal of Microbiology and Biotechnology
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• 제13권4호
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• pp.495-500
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• 2003

Tight junctions (TJ) between adjacent Sertoli cells in testis are important for the formation of the blood testis barrier (BTB). In an effort to verify the reproductive health risk of endocrine-active chemicals (EACs), changes in the transepithelial electrical resistance (TER) and the expression of TJ genes were examined by co-planar polychlorinated biphenyl (PCB) treatment in cultured mouse Sertoli cells. Although the increase in TER of Sertoli cells was accelerated by 10 nM co-planar PCB, it was downregulated by 100 nM co-planar PCB. The expression of claudin-1 was downregulated by co-planar PCB in a concentration-dependent manner. On the contrary, the expression of claudin-1 was increased in the Sertoli cells by 10 nM co-planar PCB treatment. These results suggest that the structure and function of TJ may be targeted by co-planar PCB in Sertoli cells. Assessment of the structure and function of TJ in Sertoli cells might be useful for screening the reproductive health risk of EACs.

• Journal of Microbiology and Biotechnology
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• 제25권10호
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• pp.1768-1771
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• 2015

Human Fen1 protein (hFen1) plays an important role in Okazaki fragment processing by cleaving the flap structure at the junction between single-stranded (ss) DNA and doublestranded (ds) DNA, an intermediate formed during Okazaki fragment processing, resulting in ligatable nicked dsDNA. It was reported that hChlR1, a member of the cohesion establishment factor family, stimulates hFen1 nuclease activity regardless of its ATPase activity. In this study, we found that cohesion establishment factors cooperatively stimulate endonuclease activity of hFen1 in in vivo mimic condition, including replication protein-A-coated DNA and high salt. Our findings are helpful to explain how a DNA replication machinery larger than the cohesion complex goes through the cohesin ring structure on DNA during S phase in the cell cycle.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Nuclear Engineering and Technology
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• 제48권3호
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• pp.773-777
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• 2016

A betavoltaic battery was prepared using radioactive $^{63}Ni$ attached to a three-dimensional single trenched P-N absorber. The optimum thickness of a $^{63}Ni$ layer was determined to be approximately $2{\mu}m$, considering the minimum self-shielding effect of beta particles. Electroplating of radioactive $^{63}Ni$ on a nickel (Ni) foil was carried out at a current density of $20mA/cm^2$. The difference of the short-circuit currents ($I_{sc}$) between the pre- and post-deposition of $^{63}Ni$ (16.65 MBq) on the P-N junction was 5.03 nA, as obtained from the I-V characteristics. An improved design with a sandwich structure was provided for enhancing performance.

• 한국환경보건학회지
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• 제28권2호
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• pp.23-39
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• 2002

This study focuses on the structure of geographical conditions, the riverbed, the meterological and atmospheric examination, the ecological environment, the food chain and the ecosystem, in order to establish a basic plan for preparing a natural learning area of environmental ecosystem in Bukchun and its surroundings, Gyeongju. The results could be summarized as follows. Bukchun is a first grade which extends 6km along the road from Bomun bridge to the junction of Hyungsangang. The basin area is 7.10$\textrm{km}^2$ and the slope is 1/200~1/300. Gyeongju has good atmospheric conditions, i.e. SO$_2$0.011 ~0.017ppm, CO 0.8~ 1.5ppm, NO$_2$0.013~0.019ppm, $O_3$0.013~0.020ppm, TSP 85~142$\mu\textrm{g}$/㎥, PM-10 47~90$\mu\textrm{g}$/㎥ and Pb 0.057 ~0.129$\mu\textrm{g}$/㎥, which is below the annual and daily averages, and is little lower than those of Pohang and Ulsan. The ecosystem of Bukchun is based on the structure of the food chain, which includes birds such as the grey and white herons at the top of the food chain. This study also considers the development of the river's in terms of culture, environment and ecology concept.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.206-211
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• 2015

We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.

• 대한화학회지
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• 제40권3호
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• pp.167-172
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• 1996

GaN 단결정 박막은 halide vapor phase epitaxy(HVPE)방법을 사용하여 사파이어 기판위에 헤케로에피탁시하게 성장시켰다. 이렇게 제조된 박막은 n형 전동성을 갖는다. 아연(Zn)을 받개 불순물로 도핑시켜 절연형 GaN 박막을 만들었는데 2.64과 2.43eV의 청색영역에서 발광 피크를 가졌다. 본 연구에의해 GaN 박막은 MIS(metal-insulator-semiconductor) 접합구조로 제작이 가능함을 시사하였고, 이종접합형 발광소자 개발에 기초자료가 될 것으로 전망된다.